MMUN2216LT1G
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onsemi MMUN2216LT1G

Manufacturer No:
MMUN2216LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2216LT1G is a digital transistor produced by onsemi, designed to provide reliable and efficient performance in various electronic applications. This NPN pre-biased transistor is housed in a compact SOT-23 package, making it suitable for space-constrained designs. The device is part of onsemi's family of digital transistors, known for their high reliability and long lifespan.

Key Specifications

Parameter Value Unit
Transistor Type NPN - Pre-Biased
Continuous Collector Current (Ic) 100 mA
Peak DC Collector Current (Ic) 100 mA
Voltage - Collector Emitter Breakdown (Vceo) 50 V
Power Dissipation (Pd) 246 mW
Minimum Operating Temperature -55 °C
Package Type SOT-23

Key Features

  • Compact SOT-23 Package: Ideal for space-constrained designs and high-density applications.
  • Pre-Biased Configuration: Simplifies circuit design by integrating the base resistor, reducing component count.
  • High Reliability: Long lifespan and high MTBF (Mean Time Between Failures) ensure reliable operation in demanding environments.
  • Low Power Consumption: With a power dissipation of 246 mW, it is suitable for low-power applications.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C, making it versatile for various environmental conditions.

Applications

  • Automotive Systems: Suitable for use in automotive electronics due to its robustness and wide operating temperature range.
  • Industrial Control Systems: Used in industrial automation and control systems where reliability and durability are crucial.
  • Consumer Electronics: Found in various consumer electronic devices requiring compact and efficient transistor solutions.
  • Medical Devices: Used in medical equipment where high reliability and low power consumption are essential.

Q & A

  1. What is the maximum collector current of the MMUN2216LT1G?

    The maximum collector current is 100 mA.

  2. What is the voltage - collector emitter breakdown (Vceo) of the MMUN2216LT1G?

    The Vceo is 50 V.

  3. What is the power dissipation (Pd) of the MMUN2216LT1G?

    The power dissipation is 246 mW.

  4. What is the minimum operating temperature of the MMUN2216LT1G?

    The minimum operating temperature is -55°C.

  5. What package type is the MMUN2216LT1G available in?

    The MMUN2216LT1G is available in a SOT-23 package.

  6. Is the MMUN2216LT1G pre-biased?

    Yes, the MMUN2216LT1G is a pre-biased transistor.

  7. What are some common applications of the MMUN2216LT1G?

    Common applications include automotive systems, industrial control systems, consumer electronics, and medical devices.

  8. What is the advantage of the pre-biased configuration in the MMUN2216LT1G?

    The pre-biased configuration simplifies circuit design by integrating the base resistor, reducing component count.

  9. How reliable is the MMUN2216LT1G?

    The MMUN2216LT1G is known for its high reliability and long lifespan, with a high MTBF.

  10. Can the MMUN2216LT1G operate in extreme temperatures?

    Yes, the MMUN2216LT1G can operate from -55°C to 150°C, making it versatile for various environmental conditions.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:400 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Part Number MMUN2216LT1G MMUN2217LT1G MMUN2236LT1G MMUN2116LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 100 kOhms 4.7 kOhms 10 kOhms 22 kOhms 47 kOhms 10 kOhms 10 kOhms -
Resistor - Emitter Base (R2) - 10 kOhms 100 kOhms - 10 kOhms 22 kOhms 47 kOhms 47 kOhms - -
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - -
Power - Max 400 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 400 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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