SMUN2216T1G
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onsemi SMUN2216T1G

Manufacturer No:
SMUN2216T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC59
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN2216T1G is a digital transistor from onsemi, part of the MUN2216 series. This device integrates a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes the component count. The SMUN2216T1G is packaged in a SOT-23 (TO-236) package and is lead-free, making it suitable for various applications, including those requiring AEC-Q101 qualification and PPAP capability.

Key Specifications

Characteristic Symbol Max Unit
Total Device Dissipation (TA = 25°C) PD 230 mW
Derate above 25°C - 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 480 °C/W
Thermal Resistance, Junction to Lead RθJL 205 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VCE(sat) 0.25 Vdc
Input Voltage (off) (VCE = 5.0 V, IC = 100 μA) Vi(off) 0.6 Vdc
Input Voltage (on) (VCE = 0.3 V, IC = 10 mA) Vi(on) 1.3 Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) VOL 0.2 Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) VOH 4.9 Vdc
Input Resistor R1 3.3 to 6.1 kΩ

Key Features

  • Simplifies circuit design by integrating the transistor and bias resistors into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Available in lead-free SOT-23 (TO-236) package.
  • Wide junction and storage temperature range of −55°C to +150°C.

Applications

The SMUN2216T1G is versatile and can be used in a variety of applications, including:

  • Automotive systems requiring AEC-Q101 qualification.
  • Industrial control circuits.
  • Consumer electronics where space and component count are critical.
  • General-purpose switching and amplification circuits.

Q & A

  1. What is the SMUN2216T1G?

    The SMUN2216T1G is a digital transistor with a monolithic bias resistor network from onsemi.

  2. What are the key benefits of using the SMUN2216T1G?

    It simplifies circuit design, reduces board space, and minimizes component count.

  3. What package type is the SMUN2216T1G available in?

    It is available in a SOT-23 (TO-236) package.

  4. Is the SMUN2216T1G lead-free?
  5. What is the junction and storage temperature range of the SMUN2216T1G?

    The junction and storage temperature range is −55°C to +150°C.

  6. What are some typical applications for the SMUN2216T1G?

    Automotive systems, industrial control circuits, consumer electronics, and general-purpose switching and amplification circuits.

  7. What is the maximum total device dissipation at 25°C for the SMUN2216T1G?

    The maximum total device dissipation at 25°C is 230 mW.

  8. What is the thermal resistance from junction to ambient for the SMUN2216T1G?

    The thermal resistance from junction to ambient is 480 °C/W.

  9. What is the collector-emitter saturation voltage for the SMUN2216T1G?

    The collector-emitter saturation voltage is 0.25 Vdc.

  10. Is the SMUN2216T1G AEC-Q101 qualified?

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:230 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
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Similar Products

Part Number SMUN2216T1G SMUN2211T1G SMUN2212T1G SMUN2213T1G SMUN2214T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 22 kOhms 47 kOhms 10 kOhms
Resistor - Emitter Base (R2) - 10 kOhms 22 kOhms 47 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - -
Power - Max 230 mW 230 mW 230 mW 230 mW 230 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59 SC-59 SC-59 SC-59 SC-59

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