Overview
The MMUN2215LT1G is a digital transistor from onsemi, part of their series of Bias Resistor Transistors (BRT). This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes the component count. The MMUN2215LT1G is particularly useful in applications where space and component count are critical.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.9 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V |
| DC Current Gain | hFE | 160 | 350 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Voltage (off) | Vi(off) | - | 0.6 | 0.5 | V |
| Input Voltage (on) | Vi(on) | 1.7 | 1.2 | - | V |
| Input Resistor R1 | R1 | 7.0 | 10 | 13 | kΩ |
| Package Type | - | - | - | SOT-23 (Pb-Free) | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates the transistor and bias resistors into a single device, reducing the complexity of the circuit.
- Reduces Board Space: Compact SOT-23 package minimizes the footprint on the PCB.
- Reduces Component Count: Combines multiple components into one, reducing the overall component count and potential for errors.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free Package: Compliant with lead-free regulations, making it environmentally friendly.
Applications
- Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Consumer Electronics: Suitable for a wide range of consumer electronics where space and component count are critical.
- Industrial Control Systems: Can be used in industrial control systems where reliability and compact design are essential.
- Medical Devices: Applicable in medical devices that require precise and compact electronic components.
Q & A
- What is the MMUN2215LT1G?
The MMUN2215LT1G is a digital transistor with a monolithic bias resistor network from onsemi.
- What are the key benefits of using the MMUN2215LT1G?
It simplifies circuit design, reduces board space, and minimizes component count.
- What is the package type of the MMUN2215LT1G?
The MMUN2215LT1G comes in a SOT-23 (Pb-Free) package.
- What is the junction and storage temperature range for the MMUN2215LT1G?
The junction and storage temperature range is -55°C to 150°C.
- Is the MMUN2215LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the typical DC current gain (hFE) of the MMUN2215LT1G?
The typical DC current gain (hFE) is 350.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMUN2215LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- How does the MMUN2215LT1G reduce system cost?
By integrating the transistor and bias resistors into a single device, it reduces the overall component count and the need for external resistors.
- What are the thermal characteristics of the MMUN2215LT1G?
The total device dissipation at 25°C is 246 mW, and the thermal resistance from junction to ambient is 508 °C/W for the SOT-23 package.
- Is the MMUN2215LT1G lead-free?
Yes, the MMUN2215LT1G comes in a Pb-Free package, making it compliant with lead-free regulations.
