Overview
The MMUN2233LT1G is a digital transistor from onsemi, part of the Bias Resistor Transistor (BRT) series. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes the component count, making it an efficient solution for various electronic applications.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.18 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V |
| DC Current Gain | hFE | 80 | 200 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Voltage (off) | Vi(off) | - | 0.6 | 0.5 | V |
| Input Voltage (on) | Vi(on) | 1.3 | 0.9 | - | V |
| Output Voltage (on) | VOL | - | - | 0.2 | V |
| Output Voltage (off) | VOH | 4.9 | - | - | V |
| Input Resistor R1 | R1 | 3.3 | 4.7 | 6.1 | kΩ |
| Resistor Ratio R1/R2 | R1/R2 | 0.08 | 0.1 | 0.12 | - |
| Total Device Dissipation at TA = 25°C | PD | 246 | - | - | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 508 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
- Reduces Board Space: Compact package options such as SOT-23 minimize board real estate.
- Reduces Component Count: Combines multiple components into a single device, simplifying inventory and assembly.
- High Reliability: AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Wide Temperature Range: Operates over a junction and storage temperature range of -55°C to +150°C.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust thermal characteristics.
- Industrial Control Systems: Used in industrial control circuits where reliability and compact design are crucial.
- Consumer Electronics: Ideal for consumer electronic devices requiring efficient and space-saving designs.
- Medical Devices: Can be used in medical devices where high reliability and minimal component count are essential.
Q & A
- What is the MMUN2233LT1G?
The MMUN2233LT1G is a digital transistor with a monolithic bias resistor network, designed to replace a single transistor and its external resistor bias network.
- What are the key benefits of using the MMUN2233LT1G?
It simplifies circuit design, reduces board space, and minimizes component count.
- What is the typical DC current gain of the MMUN2233LT1G?
The typical DC current gain (hFE) is 200.
- What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- What is the thermal resistance, junction to ambient, for the SOT-23 package?
The thermal resistance, junction to ambient (RθJA), is 508 °C/W.
- What is the junction and storage temperature range for the MMUN2233LT1G?
The junction and storage temperature range is -55°C to +150°C.
- Is the MMUN2233LT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What package types are available for the MMUN2233LT1G?
The MMUN2233LT1G is available in the SOT-23 package.
- What is the total device dissipation at TA = 25°C for the SOT-23 package?
The total device dissipation at TA = 25°C is 246 mW.
- How does the MMUN2233LT1G reduce system cost?
It reduces system cost by integrating multiple components into a single device, thus minimizing the number of components needed and reducing assembly complexity.
