SMUN5211T1G
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onsemi SMUN5211T1G

Manufacturer No:
SMUN5211T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi SMUN5211T1G is a digital transistor from the MUN5211 series, designed to integrate a single transistor with a monolithic bias network. This Bias Resistor Transistor (BRT) includes two resistors: a series base resistor and a base-emitter resistor, which simplifies circuit design, reduces board space, and minimizes component count. This NPN bipolar digital transistor is packaged in a SOT-323 (SC-70) surface mount package, making it suitable for a variety of applications where space efficiency and simplicity are crucial.

Key Specifications

Attribute Value Unit
Polarity NPN
R1, R2 10 kΩ / 10 kΩ
Collector Current Max 100 mA
CE Voltage-Max 50 V
Power Dissipation-Tot 202 mW
Collector - Base Voltage 50 V
Collector - Emitter Saturation Voltage 0.25 V
DC Current Gain-Min 35
Configuration Single
Collector - Current Cutoff 100 nA
Operating Temp Range -55°C to +150°C
Package Style SOT-323 (SC-70)
Mounting Method Surface Mount

Key Features

  • Integrated Bias Network: The SMUN5211T1G includes a monolithic bias network consisting of two resistors, eliminating the need for external resistors and simplifying circuit design.
  • Space Efficiency: Packaged in a compact SOT-323 (SC-70) surface mount package, reducing board space and component count.
  • High Performance: Offers a high DC current gain (minimum of 35) and low collector-emitter saturation voltage (0.25 V), ensuring reliable operation.
  • Broad Operating Temperature Range: Operates over a wide temperature range of -55°C to +150°C, making it suitable for various environmental conditions.

Applications

The onsemi SMUN5211T1G is versatile and can be used in a variety of applications, including:

  • Automotive Systems: For use in automotive electronics where space and reliability are critical.
  • Industrial Control Systems: Suitable for industrial control circuits requiring compact and reliable transistor solutions.
  • Consumer Electronics: Used in consumer electronics such as audio equipment, home appliances, and other devices where miniaturization is important.
  • Medical Devices: Can be applied in medical devices that require high reliability and compact design.

Q & A

  1. What is the polarity of the SMUN5211T1G transistor?

    The SMUN5211T1G is an NPN bipolar digital transistor.

  2. What is the maximum collector current of the SMUN5211T1G?

    The maximum collector current is 100 mA.

  3. What is the maximum CE voltage for the SMUN5211T1G?

    The maximum CE voltage is 50 V.

  4. What is the package style of the SMUN5211T1G?

    The SMUN5211T1G is packaged in a SOT-323 (SC-70) surface mount package..

  5. What is the operating temperature range of the SMUN5211T1G?

    The operating temperature range is -55°C to +150°C..

  6. What are the values of the integrated resistors R1 and R2?

    The values of R1 and R2 are both 10 kΩ..

  7. What is the minimum DC current gain of the SMUN5211T1G?

    The minimum DC current gain is 35..

  8. What is the collector-emitter saturation voltage of the SMUN5211T1G?

    The collector-emitter saturation voltage is 0.25 V..

  9. How does the SMUN5211T1G simplify circuit design?

    The SMUN5211T1G simplifies circuit design by integrating the bias resistor network into a single device, reducing the need for external resistors and minimizing component count.

  10. What are some common applications for the SMUN5211T1G?

    The SMUN5211T1G is used in automotive systems, industrial control systems, consumer electronics, and medical devices.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:202 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number SMUN5211T1G SMUN5212T1G SMUN5211T3G SMUN5213T1G SMUN5214T1G SMUN2211T1G SMUN5111T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 22 kOhms 10 kOhms 47 kOhms 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 22 kOhms 10 kOhms 47 kOhms 47 kOhms 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 60 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 202 mW 202 mW 202 mW 202 mW 202 mW 230 mW 202 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-59 SC-70-3 (SOT323)

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