SMUN5111T1G
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onsemi SMUN5111T1G

Manufacturer No:
SMUN5111T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The SMUN5111T1G is a PNP Bipolar Digital Transistor (BRT) produced by onsemi. This device is part of the MUN5111T1 series, designed to replace a single transistor and its external resistor bias network with a single integrated device. The Bias Resistor Transistor (BRT) includes a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count.

The SMUN5111T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is also PbFree, Halogen Free/BFR Free, and RoHS compliant.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current ICBO - - 100 nAdc
Collector-Emitter Cutoff Current ICEO - - 500 nAdc
Emitter-Base Cutoff Current IEBO - - - nAdc
DC Current Gain hFE 35 60 80 -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 Vdc
Input Voltage (off) Vi(off) Max - - 0.8 V
Input Voltage (on) Vi(on) Min 2.5 - - V
Series Base Resistor (R1) R1 - - 4.7 kΩ
Base-Emitter Resistor (R2) R2 - -
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplified Circuit Design: The SMUN5111T1G integrates the transistor and its bias resistors into a single device, simplifying circuit design and reducing the need for external components.
  • Reduced Board Space and Component Count: By integrating the bias resistors, the device reduces the overall board space and component count, making it ideal for compact designs.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
  • Environmental Compliance: PbFree, Halogen Free/BFR Free, and RoHS compliant, ensuring environmental sustainability.
  • Thermal Performance: The device has specified thermal characteristics, including total device dissipation and thermal resistance, ensuring reliable operation under various conditions.

Applications

  • Automotive Systems: Given its AEC-Q101 qualification and PPAP capability, the SMUN5111T1G is suitable for various automotive applications where reliability and robustness are critical.
  • Industrial Control Systems: The device can be used in industrial control circuits where compact design and reliability are essential.
  • Consumer Electronics: It can be applied in consumer electronics for general-purpose switching and amplification needs.
  • Medical Devices: The SMUN5111T1G can be used in medical devices that require compact, reliable, and environmentally compliant components.

Q & A

  1. What is the SMUN5111T1G?

    The SMUN5111T1G is a PNP Bipolar Digital Transistor (BRT) produced by onsemi, integrating a transistor and its bias resistors into a single device.

  2. What are the key benefits of using the SMUN5111T1G?

    The key benefits include simplified circuit design, reduced board space, and decreased component count. It also meets stringent automotive quality standards and is environmentally compliant.

  3. What is the typical DC current gain (hFE) of the SMUN5111T1G?

    The typical DC current gain (hFE) is 60, with a minimum of 35 and a maximum of 80.

  4. What is the collector-emitter saturation voltage (VCE(sat)) of the SMUN5111T1G?

    The collector-emitter saturation voltage (VCE(sat)) is typically 0.25 V.

  5. What are the input voltage thresholds for the SMUN5111T1G?

    The input voltage (off) maximum is 0.8 V, and the input voltage (on) minimum is 2.5 V.

  6. Is the SMUN5111T1G environmentally compliant?

    Yes, the device is PbFree, Halogen Free/BFR Free, and RoHS compliant.

  7. What is the junction and storage temperature range for the SMUN5111T1G?

    The junction and storage temperature range is from -55°C to 150°C.

  8. What are some typical applications for the SMUN5111T1G?

    Typical applications include automotive systems, industrial control systems, consumer electronics, and medical devices.

  9. What package type is the SMUN5111T1G available in?

    The device is available in the SC-70/SOT-323 package.

  10. Is the SMUN5111T1G AEC-Q101 qualified?

    Yes, the SMUN5111T1G is AEC-Q101 qualified and PPAP capable.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:202 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number SMUN5111T1G SMUN5114T1G SMUN5115T1G SMUN5112T1G SMUN5211T1G SMUN5113T1G SMUN2111T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms 22 kOhms 10 kOhms 47 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 47 kOhms - 22 kOhms 10 kOhms 47 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 60 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 202 mW 202 mW 202 mW 202 mW 202 mW 202 mW 230 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-59

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