Overview
The MUN5213T1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing system cost and board space. The MUN5213T1G is part of a series of digital transistors that include various package options, making it versatile for different application requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.1 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Voltage (off) | Vi(off) | - | 1.2 | 0.8 | Vdc |
| Input Voltage (on) | Vi(on) | 3.0 | 1.6 | - | Vdc |
| Input Resistor R1 | - | 32.9 | 47 | 61.1 | kΩ |
| Resistor Ratio R1/R2 | - | 0.8 | 1.0 | 1.2 | - |
| Total Device Dissipation (TA = 25°C) | PD | - | - | 202 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 618 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
- Reduces Board Space: Compact package options such as SC-70/SOT-323 reduce the overall footprint of the circuit.
- Reduces Component Count: By integrating the bias resistors into the transistor, it minimizes the number of components required in the circuit.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free Packages: Available in lead-free packages, making it compliant with environmental regulations.
Applications
- Automotive Systems: AEC-Q101 qualified, making it suitable for various automotive applications.
- Consumer Electronics: Ideal for use in consumer electronics due to its compact size and simplified circuit design.
- Industrial Control Systems: Used in industrial control systems where space and component count are critical.
- General Purpose Switching: Suitable for general-purpose switching applications where a compact, integrated solution is required.
Q & A
- What is the MUN5213T1G?
The MUN5213T1G is a digital transistor with a monolithic bias resistor network, designed to simplify circuit design and reduce board space.
- What are the key benefits of using the MUN5213T1G?
It simplifies circuit design, reduces board space, and minimizes component count by integrating the bias resistors into the transistor.
- What are the typical applications of the MUN5213T1G?
It is used in automotive systems, consumer electronics, industrial control systems, and general-purpose switching applications.
- What is the maximum collector-emitter breakdown voltage of the MUN5213T1G?
The maximum collector-emitter breakdown voltage is 50 Vdc.
- What is the thermal resistance, junction to ambient, for the SC-70/SOT-323 package?
The thermal resistance, junction to ambient, is 618 °C/W for the SC-70/SOT-323 package.
- Is the MUN5213T1G AEC-Q101 qualified?
- What is the input resistor value R1 for the MUN5213T1G?
The input resistor value R1 is typically 47 kΩ, with a range of 32.9 kΩ to 61.1 kΩ.
- What is the junction and storage temperature range for the MUN5213T1G?
The junction and storage temperature range is -55°C to 150°C.
- Is the MUN5213T1G available in Pb-free packages?
- What is the total device dissipation at TA = 25°C for the SC-70/SOT-323 package?
The total device dissipation at TA = 25°C is 202 mW for the SC-70/SOT-323 package.
