PDTC114EE,115
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NXP USA Inc. PDTC114EE,115

Manufacturer No:
PDTC114EE,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 150MW SC75
Delivery:
Payment:
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Product Introduction

Overview

The PDTC114EE,115 is a discrete semiconductor component produced by NXP USA Inc. It is a pre-biased NPN bipolar junction transistor (BJT) packaged in the SC-75 (SOT-416) package. This transistor is designed for general-purpose applications and is known for its reliability and performance in various electronic circuits.

Key Specifications

ParameterValue
Transistor TypeNPN Pre-Biased
Collector Current0.1 A
Collector-Emitter Voltage50 V
PackageSC-75, SOT-416
Power Dissipation150 mW
Base-Emitter Voltage5 V at 5 mA

Key Features

  • Pre-biased configuration for simplified circuit design
  • Compact SC-75 (SOT-416) package for space-saving applications
  • Low power dissipation of 150 mW
  • Collector current of 0.1 A and collector-emitter voltage of 50 V
  • Suitable for general-purpose switching and amplification applications

Applications

The PDTC114EE,115 is versatile and can be used in a variety of applications, including:

  • General-purpose switching circuits
  • Amplifier circuits
  • Automotive electronics
  • Consumer electronics
  • Industrial control systems

Q & A

  1. What is the transistor type of the PDTC114EE,115?
    The PDTC114EE,115 is an NPN pre-biased bipolar junction transistor.
  2. What is the collector current of the PDTC114EE,115?
    The collector current is 0.1 A.
  3. What is the collector-emitter voltage of the PDTC114EE,115?
    The collector-emitter voltage is 50 V.
  4. What package type does the PDTC114EE,115 use?
    The PDTC114EE,115 is packaged in the SC-75 (SOT-416) package.
  5. What is the power dissipation of the PDTC114EE,115?
    The power dissipation is 150 mW.
  6. What is the base-emitter voltage at 5 mA for the PDTC114EE,115?
    The base-emitter voltage at 5 mA is 5 V.
  7. Where can the PDTC114EE,115 be used?
    The PDTC114EE,115 can be used in general-purpose switching and amplification circuits, automotive electronics, consumer electronics, and industrial control systems.
  8. Why is the pre-biased configuration beneficial?
    The pre-biased configuration simplifies circuit design by reducing the number of external components needed.
  9. What are the advantages of the SC-75 package?
    The SC-75 package is compact and space-saving, making it ideal for applications where board space is limited.
  10. Is the PDTC114EE,115 suitable for high-power applications?
    No, the PDTC114EE,115 is not suitable for high-power applications due to its low power dissipation of 150 mW.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75
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Similar Products

Part Number PDTC114EE,115 PDTC114EU,115 PDTC114EK,115 PDTC115EE,115 PDTC114YE,115 PDTC114TE,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Active Obsolete Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased - NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA - 20 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V - 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms - 100 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms - 100 kOhms 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V - 80 @ 5mA, 5V 100 @ 5mA, 5V 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA - 150mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA - 1µA 1µA 100nA (ICBO)
Frequency - Transition 230 MHz - - - - -
Power - Max 150 mW 200 mW - 150 mW 150 mW 150 mW
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-70, SOT-323 - SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75 SOT-323 - SC-75 SC-75 SC-75

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