MUN2113T1G
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onsemi MUN2113T1G

Manufacturer No:
MUN2113T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V 100MA SC59
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The MUN2113T1G is a digital transistor from onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistors, thereby reducing both system cost and board space. It is part of a series that includes other models like MMUN2113L and MUN5113, all of which are PNP transistors with built-in bias resistors.

Key Specifications

CharacteristicSymbolMaxUnit
Total Device Dissipation (TA = 25°C)PD230mW
Derate above 25°C-1.8mW/°C
Thermal Resistance, Junction to AmbientRθJA540°C/W
Thermal Resistance, Junction to LeadRθJL264°C/W
Junction and Storage Temperature RangeTJ, Tstg−55 to +150°C
Input Voltage (off)Vi(off)1.2Vdc
Input Voltage (on)Vi(on)3.0Vdc
Output Voltage (on)VOL0.2Vdc
Output Voltage (off)VOH4.9Vdc
Input ResistorR147 kΩ
Resistor RatioR1/R21.0-

Key Features

  • Simplifies circuit design by integrating the transistor and bias resistors into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free, and RoHS compliant.

Applications

The MUN2113T1G is suitable for a variety of applications, including automotive systems, industrial control circuits, and general-purpose switching applications where space and component count need to be minimized. It is also useful in any scenario where a simple, integrated transistor solution is required.

Q & A

  1. What is the MUN2113T1G? The MUN2113T1G is a digital transistor with a monolithic bias resistor network from onsemi.
  2. What are the key benefits of using the MUN2113T1G? It simplifies circuit design, reduces board space, and minimizes component count.
  3. What are the thermal characteristics of the MUN2113T1G? The total device dissipation at 25°C is 230 mW, with a thermal resistance of 540 °C/W from junction to ambient.
  4. Is the MUN2113T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable.
  5. What is the input voltage range for the MUN2113T1G? The input voltage (off) is 1.2 Vdc, and the input voltage (on) is 3.0 Vdc.
  6. What is the output voltage range for the MUN2113T1G? The output voltage (on) is 0.2 Vdc, and the output voltage (off) is 4.9 Vdc.
  7. What package options are available for the MUN2113T1G? It is available in the SC-59 package.
  8. Is the MUN2113T1G RoHS compliant? Yes, it is Pb-free, halogen-free, and RoHS compliant.
  9. What is the junction and storage temperature range for the MUN2113T1G? The junction and storage temperature range is −55 to +150 °C.
  10. How does the MUN2113T1G reduce system cost? By integrating the transistor and bias resistors into a single device, it reduces the overall component count and board space, thereby reducing system cost.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:230 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
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Similar Products

Part Number MUN2113T1G MUN2114T1G MUN2213T1G MUN2115T1G MUN2116T1G MUN2133T1G MUN5113T1G MUN2111T1G MUN2112T1G MUN2113T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Obsolete Active Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 47 kOhms 10 kOhms 47 kOhms 10 kOhms 4.7 kOhms 4.7 kOhms 47 kOhms 10 kOhms 22 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 47 kOhms - - 47 kOhms 47 kOhms 10 kOhms 22 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - -
Power - Max 230 mW 230 mW 338 mW 230 mW 230 mW 230 mW 202 mW 230 mW 230 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-70-3 (SOT323) SC-59 SC-59 -

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