DTA114YET1G
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onsemi DTA114YET1G

Manufacturer No:
DTA114YET1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V 100MA SC75
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The DTA114YET1G is a PNP Bipolar Digital Transistor (BRT) manufactured by onsemi. This component is designed to integrate a single transistor and its external resistor bias network into a single package, simplifying circuit design and reducing component count. It is housed in a SC-75 (SOT-416) 3-lead package, making it suitable for compact and efficient electronic designs.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Digital Transistor (BRT)
Package TypeSC-75 (SOT-416) 3-lead
Collector Current (Ic)-100 mA
Collector-Emitter Voltage (Vce)-50 V
Bias Resistor NetworkR1 = 10 kΩ, R2 = 47 kΩ
Operating Temperature Range-55°C to 150°C

Key Features

  • Integrated bias resistor network, reducing the need for external resistors.
  • Compact SC-75 (SOT-416) 3-lead package for space-efficient designs.
  • PNP bipolar digital transistor with a collector current of -100 mA and collector-emitter voltage of -50 V.
  • Suitable for a wide range of digital and analog applications.

Applications

The DTA114YET1G is versatile and can be used in various electronic circuits, including digital logic circuits, switching applications, and general-purpose amplification. It is particularly useful in designs where space is limited and component count needs to be minimized. Typical applications include consumer electronics, industrial control systems, and automotive electronics.

Q & A

  1. What is the DTA114YET1G? The DTA114YET1G is a PNP Bipolar Digital Transistor (BRT) with an integrated bias resistor network.
  2. What package type does the DTA114YET1G use? It is housed in a SC-75 (SOT-416) 3-lead package.
  3. What is the collector current of the DTA114YET1G? The collector current (Ic) is -100 mA.
  4. What is the collector-emitter voltage of the DTA114YET1G? The collector-emitter voltage (Vce) is -50 V.
  5. What is the bias resistor network configuration of the DTA114YET1G? The bias resistor network is configured as R1 = 10 kΩ and R2 = 47 kΩ.
  6. What are the typical applications of the DTA114YET1G? It is used in digital logic circuits, switching applications, general-purpose amplification, consumer electronics, industrial control systems, and automotive electronics.
  7. What is the operating temperature range of the DTA114YET1G? The operating temperature range is -55°C to 150°C.
  8. Why is the DTA114YET1G beneficial in circuit design? It simplifies circuit design by integrating the transistor and its external resistor bias network into a single package, reducing component count and space requirements.
  9. Where can I find detailed specifications for the DTA114YET1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics and RS Components.
  10. Is the DTA114YET1G available in reel quantities? Yes, it is available in reel quantities, typically 3000 pieces per reel.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Similar Products

Part Number DTA114YET1G DTA114EET1G DTA114TET1G DTA114YET1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms 10 kOhms - 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 35 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA
Frequency - Transition - - - -
Power - Max 200 mW 200 mW 200 mW 200 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416

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