PDTC123TT,235
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Nexperia USA Inc. PDTC123TT,235

Manufacturer No:
PDTC123TT,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 250MW TO236AB
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The PDTC123TT,235 is a pre-biased NPN bipolar transistor (BJT) manufactured by Nexperia USA Inc. This component is designed for surface mount applications and is packaged in the TO-236AB format. It is part of Nexperia's extensive range of discrete semiconductor products, known for their reliability and performance in various electronic systems.

Key Specifications

Parameter Value
Type Pre-Biased NPN Bipolar Transistor (BJT)
Package TO-236AB (Surface Mount)
Collector-Base Voltage (V_CBO) 50 V
Collector-Emitter Breakdown Voltage (V_CEO) 50 V
Collector Current (I_C) 100 mA
Power Dissipation (P_D) 250 mW

Key Features

  • Pre-biased configuration, simplifying circuit design and reducing component count.
  • Surface mount package (TO-236AB) for compact and efficient board layout.
  • High collector-emitter breakdown voltage (V_CEO) of 50 V, ensuring robust operation in various applications.
  • Low power dissipation of 250 mW, suitable for energy-efficient designs.
  • Reliable performance in a wide range of temperatures and operating conditions.

Applications

  • General-purpose switching and amplification in electronic circuits.
  • Automotive electronics, including various control and sensing applications.
  • Industrial control systems, such as motor control and power management.
  • Consumer electronics, including audio and video equipment.
  • Medical devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the PDTC123TT,235?

    The PDTC123TT,235 is a pre-biased NPN bipolar transistor (BJT) manufactured by Nexperia USA Inc.

  2. What package type does the PDTC123TT,235 use?

    The PDTC123TT,235 is packaged in the TO-236AB surface mount format.

  3. What is the maximum collector current of the PDTC123TT,235?

    The maximum collector current is 100 mA.

  4. What is the collector-emitter breakdown voltage of the PDTC123TT,235?

    The collector-emitter breakdown voltage (V_CEO) is 50 V.

  5. What is the power dissipation of the PDTC123TT,235?

    The power dissipation is 250 mW.

  6. What are the typical applications of the PDTC123TT,235?

    Typical applications include general-purpose switching, automotive electronics, industrial control systems, consumer electronics, and medical devices.

  7. Why is the pre-biased configuration beneficial?

    The pre-biased configuration simplifies circuit design and reduces the component count, making it more efficient and cost-effective.

  8. Where can I find detailed specifications and datasheets for the PDTC123TT,235?

    Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key, Mouser, and Avnet.

  9. Is the PDTC123TT,235 suitable for high-temperature applications?

    The PDTC123TT,235 is designed to operate reliably in a wide range of temperatures, making it suitable for various environmental conditions.

  10. Can the PDTC123TT,235 be used in automotive applications?

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTC123TT,235 PDTC143TT,235 PDTC123JT,235 PDTC123TT,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 4.7 kOhms 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) - - 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V 200 @ 1mA, 5V 100 @ 10mA, 5V 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA
Frequency - Transition - - - -
Power - Max 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB SOT-23

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