PDTB114ETR
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Nexperia USA Inc. PDTB114ETR

Manufacturer No:
PDTB114ETR
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 0.46W
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The Nexperia PDTB114ETR is a pre-biased bipolar transistor (BJT) designed for a variety of electronic applications. This transistor is part of Nexperia's extensive range of discrete semiconductor products and is known for its reliability and performance. The PDTB114ETR is a PNP-type transistor, pre-biased with built-in resistors, making it easier to use in circuit designs without the need for external resistors. It is packaged in a compact SOT-323-3 (SC-70) package, suitable for surface mount technology (SMT) assembly.

Key Specifications

ParameterValue
Transistor TypePNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)500mA
Power - Max320mW
Resistor - Base (R1) (Ohms)10k
Resistor - Emitter Base (R2) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition140MHz
Package / CaseSOT-323-3 (SC-70)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant

Key Features

  • Pre-biased bipolar transistor with built-in resistors, simplifying circuit design and reducing component count.
  • Compact SOT-323-3 (SC-70) package suitable for surface mount technology.
  • High collector current of up to 500mA and collector-emitter voltage of up to 50V.
  • Low Vce saturation voltage of 100mV at 2.5mA and 50mA.
  • High transition frequency of 140MHz, making it suitable for high-frequency applications.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.
  • Low collector cutoff current of 500nA, contributing to low power consumption.

Applications

The Nexperia PDTB114ETR is versatile and can be used in a variety of applications, including:

  • Automotive electronics: Suitable for 48V automotive board nets and other high-voltage circuits.
  • Consumer electronics: Used in audio amplifiers, switching circuits, and general-purpose amplification.
  • Industrial control systems: Employed in control circuits, signal processing, and power management.
  • Communication devices: Utilized in RF and microwave circuits due to its high transition frequency.

Q & A

  1. What is the transistor type of the PDTB114ETR?
    The PDTB114ETR is a PNP-type pre-biased bipolar transistor.
  2. What is the maximum collector current of the PDTB114ETR?
    The maximum collector current is 500mA.
  3. What is the collector-emitter breakdown voltage of the PDTB114ETR?
    The collector-emitter breakdown voltage is up to 50V.
  4. What is the package type of the PDTB114ETR?
    The PDTB114ETR is packaged in a SOT-323-3 (SC-70) package.
  5. Is the PDTB114ETR RoHS compliant?
    Yes, the PDTB114ETR is lead-free and RoHS compliant.
  6. What is the transition frequency of the PDTB114ETR?
    The transition frequency is 140MHz.
  7. What are the built-in resistor values of the PDTB114ETR?
    The built-in resistors are 10kΩ for both the base and emitter-base resistors.
  8. What is the maximum power dissipation of the PDTB114ETR?
    The maximum power dissipation is 320mW.
  9. What is the Vce saturation voltage of the PDTB114ETR?
    The Vce saturation voltage is 100mV at 2.5mA and 50mA.
  10. What is the moisture sensitivity level (MSL) of the PDTB114ETR?
    The MSL is 1 (Unlimited).

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:140 MHz
Power - Max:320 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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