PDTC114EMB,315
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Nexperia USA Inc. PDTC114EMB,315

Manufacturer No:
PDTC114EMB,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V DFN1006B-3
Delivery:
Payment:
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Product Introduction

Overview

The PDTC114EMB,315 is an NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is designed to simplify circuit design and reduce component count by integrating built-in bias resistors. It is packaged in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained applications. The transistor is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments.

Key Specifications

ParameterValue
TypeNPN Resistor-Equipped Transistor (RET)
PackageDFN1006B-3 (SOT883B)
Output Current100 mA
Voltage Rating50 V
Built-in ResistorsR1 = 10 kΩ, R2 = 10 kΩ
Package Dimensions1 mm x 0.6 mm x 0.37 mm
Solder Lands Pitch0.35 mm
QualificationAEC-Q101 qualified
Environmental ComplianceLead-free and halogen-free

Key Features

  • Reduces component count by integrating built-in bias resistors.
  • Simplifies circuit design.
  • Reduces pick and place costs due to the integrated resistors.
  • Low package height of 0.37 mm, suitable for space-constrained applications.
  • Low-current peripheral driver and control of IC inputs.
  • Replaces general-purpose transistors in digital applications.

Applications

The PDTC114EMB,315 is versatile and can be used in various applications, including:

  • Mobile devices: Due to its small package size and low power consumption.
  • Automotive systems: AEC-Q101 qualification ensures reliability in automotive environments.
  • Industrial and consumer electronics: Suitable for low-current peripheral driver and control of IC inputs.
  • Digital applications: Replaces general-purpose transistors, simplifying circuit design.

Q & A

  1. What is the PDTC114EMB,315? The PDTC114EMB,315 is an NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc.
  2. What package type does it use? It is packaged in a leadless ultra small DFN1006B-3 (SOT883B) SMD plastic package.
  3. What are the built-in resistor values? The built-in resistors are R1 = 10 kΩ and R2 = 10 kΩ.
  4. What is the output current capability? The output current capability is 100 mA.
  5. Is it AEC-Q101 qualified? Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  6. What are the environmental compliance features? It is lead-free and halogen-free according to Nexperia's definitions.
  7. What are the typical applications of this transistor? It is used in mobile devices, automotive systems, industrial and consumer electronics, and digital applications.
  8. How does it simplify circuit design? It simplifies circuit design by integrating built-in bias resistors, reducing the need for external components.
  9. What is the package height? The package height is 0.37 mm.
  10. Where can I purchase this component? It can be purchased from various distributors such as Arrow, Avnet, Digi-Key, Mouser Electronics, and more.
  11. Is it available in stock? Yes, it is available in stock from several suppliers.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:3-XFDFN
Supplier Device Package:DFN1006B-3
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Similar Products

Part Number PDTC114EMB,315 PDTC115EMB,315 PDTC114TMB,315 PDTC114YMB,315 PDTC114EM,315
Manufacturer Nexperia USA Inc. NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased - NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 20 mA - 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V - 50 V 50 V
Resistor - Base (R1) 10 kOhms 100 kOhms - 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 100 kOhms - 47 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 80 @ 5mA, 5V - 100 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 250µA, 5mA - 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA - 1µA 1µA
Frequency - Transition 230 MHz 230 MHz - 230 MHz -
Power - Max 250 mW 250 mW - 250 mW 250 mW
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount
Package / Case 3-XFDFN SC-101, SOT-883 - 3-XFDFN SC-101, SOT-883
Supplier Device Package DFN1006B-3 DFN1006B-3 - DFN1006B-3 SOT-883

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