1N4007 TR
  • Share:

Central Semiconductor Corp 1N4007 TR

Manufacturer No:
1N4007 TR
Manufacturer:
Central Semiconductor Corp
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007 TR is a standard silicon rectifier diode produced by Central Semiconductor Corp. This diode is designed for general-purpose rectification and is widely used in various electronic circuits for converting AC to DC. It features a high reverse voltage rating and a significant forward current capacity, making it suitable for a broad range of applications.

Key Specifications

Characteristic Symbol Unit Value
Peak Repetitive Reverse Voltage VRRM V 1000
DC Blocking Voltage VR V 1000
RMS Reverse Voltage VR(RMS) V 700
Average Forward Current IO A 1.0
Peak Forward Surge Current (8.3ms) IFSM A 30
Forward Voltage @ IF = 1.0A VFM V 1.1
Reverse Current @ VR = 1000V IRM µA 5.0
Operating and Storage Junction Temperature TJ, TSTG °C -65 to +150
Package Type DO-41

Key Features

  • High Reverse Voltage Capability: The 1N4007 has a peak repetitive reverse voltage rating of 1000V, making it suitable for high-voltage applications.
  • High Forward Current Rating: It can handle an average forward current of 1A, which is adequate for many power supply and motor drive applications.
  • Low Forward Voltage Drop: The diode has a forward voltage drop of approximately 1.1V at 1A, which minimizes power loss during operation.
  • Surge Overload Rating: The diode can withstand a non-repetitive peak forward surge current of 30A for 8.3ms.
  • Low Reverse Leakage Current: The reverse leakage current is 5.0 µA at 1000V, indicating low power consumption in the reverse bias state.
  • Standard Recovery Speed: The diode has a standard recovery time, making it suitable for general-purpose rectification.
  • Compact Package: The DO-41 package is compact and features a standard pin configuration, making it easy to integrate into various circuit designs.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Motor Drives: Employed in motor control circuits to handle high current and voltage requirements.
  • Lighting Ballasts: Utilized in lighting systems to regulate and rectify the input voltage.
  • Industrial Controls: Used in various industrial control circuits for rectification and voltage regulation.
  • Automotive Electronics: Suitable for use in automotive systems due to its robust specifications and reliability.

Q & A

  1. What is the peak repetitive reverse voltage rating of the 1N4007 diode?

    The peak repetitive reverse voltage rating of the 1N4007 diode is 1000V.

  2. What is the average forward current rating of the 1N4007 diode?

    The average forward current rating of the 1N4007 diode is 1A.

  3. What is the forward voltage drop of the 1N4007 diode at 1A?

    The forward voltage drop of the 1N4007 diode at 1A is approximately 1.1V.

  4. What is the non-repetitive peak forward surge current rating of the 1N4007 diode?

    The non-repetitive peak forward surge current rating of the 1N4007 diode is 30A for 8.3ms.

  5. What is the reverse leakage current of the 1N4007 diode at 1000V?

    The reverse leakage current of the 1N4007 diode at 1000V is 5.0 µA.

  6. What is the operating and storage junction temperature range of the 1N4007 diode?

    The operating and storage junction temperature range of the 1N4007 diode is -65°C to +150°C.

  7. What type of package does the 1N4007 diode come in?

    The 1N4007 diode comes in a DO-41 package.

  8. Is the 1N4007 diode still in active production?

    No, the 1N4007 diode is considered an obsolete product and is no longer in active production. However, equivalent or alternative models are available.

  9. What are some common applications of the 1N4007 diode?

    The 1N4007 diode is commonly used in power supplies, motor drives, lighting ballasts, industrial controls, and automotive electronics.

  10. What is the recovery time of the 1N4007 diode?

    The 1N4007 diode has a standard recovery time with a reverse recovery time of approximately 2µs.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.05
10,511

Please send RFQ , we will respond immediately.

Same Series
SQA000001
SQA000001
XTAL OSC XO 100.0000MHZ HCSL SMD
1N4007 BK
1N4007 BK
DIODE GPP 1A 1000V DO41 AXIAL
1N4004 TR
1N4004 TR
DIODE GEN PURP 400V 1A DO41

Similar Products

Part Number 1N4007 TR 1N4006 TR
Manufacturer Central Semiconductor Corp Central Semiconductor Corp
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 800 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 800 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

BAS28 TR TIN/LEAD
BAS28 TR TIN/LEAD
Central Semiconductor Corp
DIODE SW 75V 250MA SOT143
1N4002G BK
1N4002G BK
Central Semiconductor Corp
DIODE GEN PURPOSE DO41
BZX84C18 TR PBFREE
BZX84C18 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 18V 350MW SOT23
1N4740A TR PBFREE
1N4740A TR PBFREE
Central Semiconductor Corp
DIODE ZENER 10V 1W DO41
1N5333B BK
1N5333B BK
Central Semiconductor Corp
TRANSISTOR
1N5349B BK
1N5349B BK
Central Semiconductor Corp
TRANSISTOR
1N5342B BK
1N5342B BK
Central Semiconductor Corp
TRANSISTOR
2N6075A TIN/LEAD
2N6075A TIN/LEAD
Central Semiconductor Corp
TRIAC 4A 600V TO-126
BC846BR TR PBFREE
BC846BR TR PBFREE
Central Semiconductor Corp
TRANS NPN 65V SOT23
TIP112 PBFREE
TIP112 PBFREE
Central Semiconductor Corp
TRANS NPN DARL 100V TO220-3
TIP117 PBFREE
TIP117 PBFREE
Central Semiconductor Corp
TRANS NPN DARL 100V TO220-3
MJ2955 PBFREE
MJ2955 PBFREE
Central Semiconductor Corp
TRANS PNP 70V 15A TO3