TIP112 TIN/LEAD
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Central Semiconductor Corp TIP112 TIN/LEAD

Manufacturer No:
TIP112 TIN/LEAD
Manufacturer:
Central Semiconductor Corp
Package:
Bulk
Description:
TRANS NPN DARL 100V TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP112 TIN/LEAD transistor, manufactured by Central Semiconductor Corp, is an NPN Darlington power transistor. This device is part of the TIP110 series and is known for its high current gain and robust performance. The TIP112 is packaged in a TO-220AB case, making it suitable for a variety of power amplification and switching applications. Despite some models in the series being discontinued, the TIP112 remains available and is widely used in industrial and consumer electronics.

Key Specifications

Parameter Value
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Transistor Type NPN - Darlington
Supplier Device Package TO-220AB
Power - Max 50 W
Package / Case TO-220-3
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V
Current - Collector Cutoff (Max) 2mA
Current - Collector (Ic) (Max) 2 A

Key Features

  • High Current Gain: The TIP112 offers a high DC current gain (hFE) of 1000 at 1A and 4V, making it suitable for applications requiring significant amplification.
  • High Power Handling: With a maximum power dissipation of 50 W, this transistor can handle high-power applications efficiently.
  • Robust Operating Temperature: The transistor can operate up to a junction temperature of 150°C, ensuring reliability in various environmental conditions.
  • Through Hole Mounting: Packaged in a TO-220AB case, it is easy to mount and integrate into through-hole PCB designs.

Applications

  • Power Amplifiers: The TIP112 is often used in power amplifier circuits due to its high current gain and power handling capabilities.
  • Switching Circuits: Its high current and voltage ratings make it suitable for switching applications in industrial and consumer electronics.
  • Motor Control: It can be used in motor control circuits where high current and reliable switching are required.
  • Automotive Electronics: The transistor's robust operating temperature and high power handling make it a good choice for automotive applications.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the TIP112 transistor?

    The maximum collector-emitter breakdown voltage is 100 V.

  2. What is the transistor type of the TIP112?

    The TIP112 is an NPN Darlington transistor.

  3. What is the maximum power dissipation of the TIP112?

    The maximum power dissipation is 50 W.

  4. What is the package type of the TIP112 transistor?

    The TIP112 is packaged in a TO-220AB case.

  5. What is the minimum DC current gain (hFE) of the TIP112?

    The minimum DC current gain (hFE) is 1000 at 1A and 4V.

  6. What is the maximum collector current (Ic) of the TIP112?

    The maximum collector current (Ic) is 2 A.

  7. What is the operating temperature range of the TIP112 transistor?

    The operating temperature range is up to a junction temperature of 150°C.

  8. Is the TIP112 lead-free and RoHS compliant?

    Yes, the TIP112 is available in lead-free and RoHS compliant versions.

  9. What are common applications for the TIP112 transistor?

    Common applications include power amplifiers, switching circuits, motor control, and automotive electronics.

  10. Is the TIP112 suitable for through-hole mounting?

    Yes, the TIP112 is suitable for through-hole mounting due to its TO-220AB package.

  11. What is the Vce saturation voltage of the TIP112 transistor?

    The Vce saturation voltage is 2.5V @ 8mA, 2A.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:- 
Frequency - Transition:25MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Same Series
TIP112 TIN/LEAD
TIP112 TIN/LEAD
TRANS NPN DARL 100V TO220-3
TIP117 TIN/LEAD
TIP117 TIN/LEAD
TRANS PNP DARL 100V TO220-3

Similar Products

Part Number TIP112 TIN/LEAD TIP117 TIN/LEAD
Manufacturer Central Semiconductor Corp Central Semiconductor Corp
Product Status Active Active
Transistor Type NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max - -
Frequency - Transition 25MHz 25MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3

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