2N7002 TR13 PBFREE
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Central Semiconductor Corp 2N7002 TR13 PBFREE

Manufacturer No:
2N7002 TR13 PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002 TR13 PBFREE is an N-Channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. This device is produced using the N-Channel DMOS process and is designed for high-speed pulsed amplifier and driver applications. It is particularly suited for low voltage and low current switching applications due to its low on-state resistance and low input capacitance. The MOSFET is available in a lead-free SOT-23 package, making it suitable for compact and environmentally friendly designs.

Key Specifications

Parameter Symbol Units Minimum Typical Maximum
Drain-Source Voltage VDS V - - 60
Drain-Gate Voltage VDG V - - 60
Gate-Source Voltage VGS V - - 40
Continuous Drain Current (TC=25°C) ID mA - - 115
Continuous Drain Current (TC=100°C) ID mA - - 75
Maximum Pulsed Drain Current IDM mA - - 800
Power Dissipation PD mW - - 350
Operating and Storage Junction Temperature TJ, Tstg °C -65 - 150
Thermal Resistance ΘJA °C/W - - 357
Gate Threshold Voltage VGS(th) V 1.0 2.1 2.5
On-State Resistance rDS(ON) Ω 3.7 - 7.5

Key Features

  • N-Channel enhancement-mode MOSFET with low on-state resistance.
  • Continuous Drain Current (ID) of up to 115 mA at 25°C and 75 mA at 100°C.
  • Drain-Source Voltage (VDS) of up to 60 V.
  • Gate-Source Threshold Voltage (VGS-th) ranging from 1.0 V to 2.5 V.
  • Low input capacitance and high switching performance.
  • Available in SOT-23 and TO-92 packages.
  • Lead-free (PBFREE) version available for environmentally friendly designs.
  • Fast turn-on and turn-off times (typically 20 ns each).

Applications

  • Low current and low voltage switching applications.
  • DC-DC converters.
  • eMobility applications.
  • Applications requiring low on-state resistance.
  • Power management applications.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002 MOSFET?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current of the 2N7002 at 25°C?

    The continuous drain current (ID) at 25°C is up to 115 mA.

  3. What is the gate-source threshold voltage range of the 2N7002?

    The gate-source threshold voltage (VGS-th) ranges from 1.0 V to 2.5 V.

  4. What are the typical turn-on and turn-off times of the 2N7002?

    The typical turn-on and turn-off times are both 20 ns.

  5. In what packages is the 2N7002 available?

    The 2N7002 is available in SOT-23 and TO-92 packages.

  6. Is the 2N7002 suitable for 3.3V or 5V system voltage?

    Yes, the 2N7002 is suitable for both 3.3V and 5V system voltages due to its low gate-source threshold voltage.

  7. What is the maximum pulsed drain current of the 2N7002?

    The maximum pulsed drain current (IDM) is 800 mA.

  8. What is the thermal resistance (ΘJA) of the 2N7002 in the SOT-23 package?

    The thermal resistance (ΘJA) is 357 °C/W.

  9. Is the 2N7002 TR13 PBFREE version lead-free?

    Yes, the 2N7002 TR13 PBFREE version is lead-free.

  10. What are some common applications of the 2N7002 MOSFET?

    Common applications include low current and low voltage switching, DC-DC converters, eMobility, and power management.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.59 nC @ 4.5 V
Vgs (Max):40V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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