TIP41C PBFREE
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Central Semiconductor Corp TIP41C PBFREE

Manufacturer No:
TIP41C PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Bulk
Description:
TRANS NPN 100V 6A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP41C PBFREE, produced by Central Semiconductor Corp, is an NPN Epitaxial-Base Silicon Power Transistor. This transistor is designed for power amplifier and high-speed switching applications. It is part of the TIP41 series, which includes several variants with different voltage ratings. The TIP41C specifically is rated for a collector-emitter voltage of 100V and a continuous collector current of 6A, making it suitable for a wide range of power handling needs.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)100V
Collector-Emitter Voltage (VCEO)100V
Emitter-Base Voltage (VEBO)5.0V
Continuous Collector Current (IC)6.0A
Peak Collector Current (ICM)10A
Continuous Base Current (IB)2.0A
Power Dissipation (PD)65W
Power Dissipation at TA=25°C (PD)2.0W
Operating and Storage Junction Temperature (TJ, Tstg)-65 to +150°C
Collector Cutoff Current (ICEO) at VCE=60V0.7mA
Collector-Emitter Saturation Voltage (VCE(SAT)) at IC=6.0A, IB=0.6A1.5V
Base-Emitter On Voltage (VBE(ON)) at IC=6.0A, VCE=4.0V2.0V
DC Current Gain (hFE) at IC=0.3A, VCE=4.0V30
DC Current Gain (hFE) at IC=3.0A, VCE=4.0V15-75
Transition Frequency (fT) at IC=0.5A, VCE=10V, f=1.0MHz3.0MHz

Key Features

  • NPN Epitaxial-Base Silicon Power Transistor
  • High collector current and voltage ratings, making it suitable for power amplifier and high-speed switching applications
  • Low collector-emitter saturation voltage (VCE(SAT)) of 1.5V at IC=6.0A, IB=0.6A
  • High DC current gain (hFE) with a range of 15-75 at IC=3.0A, VCE=4.0V
  • Transition frequency (fT) of 3.0 MHz at IC=0.5A, VCE=10V, f=1.0MHz
  • Pb-Free and RoHS compliant, ensuring environmental safety and compliance with regulatory standards

Applications

The TIP41C PBFREE is versatile and can be used in various applications, including:

  • Power amplifiers: Due to its high collector current and voltage ratings, it is ideal for power amplifier circuits.
  • High-speed switching: Its fast switching times make it suitable for high-speed switching applications.
  • General purpose power transistors: It can be used in a wide range of general-purpose power transistor applications where high current and voltage handling are required.

Q & A

  1. What is the collector-emitter voltage rating of the TIP41C?
    The collector-emitter voltage rating of the TIP41C is 100V.
  2. What is the continuous collector current of the TIP41C?
    The continuous collector current of the TIP41C is 6.0A.
  3. What is the peak collector current of the TIP41C?
    The peak collector current of the TIP41C is 10A.
  4. What is the power dissipation of the TIP41C at TA=25°C?
    The power dissipation of the TIP41C at TA=25°C is 2.0W.
  5. Is the TIP41C Pb-Free and RoHS compliant?
    Yes, the TIP41C is Pb-Free and RoHS compliant.
  6. What is the transition frequency (fT) of the TIP41C?
    The transition frequency (fT) of the TIP41C is 3.0 MHz at IC=0.5A, VCE=10V, f=1.0MHz.
  7. What are the typical applications of the TIP41C?
    The TIP41C is typically used in power amplifiers, high-speed switching applications, and as a general-purpose power transistor.
  8. What is the base-emitter on voltage (VBE(ON)) of the TIP41C?
    The base-emitter on voltage (VBE(ON)) of the TIP41C is 2.0V at IC=6.0A, VCE=4.0V.
  9. What is the collector-emitter saturation voltage (VCE(SAT)) of the TIP41C?
    The collector-emitter saturation voltage (VCE(SAT)) of the TIP41C is 1.5V at IC=6.0A, IB=0.6A.
  10. What is the operating and storage junction temperature range of the TIP41C?
    The operating and storage junction temperature range of the TIP41C is -65 to +150°C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):6 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 600mA, 6A
Current - Collector Cutoff (Max):700µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 300mA, 4V
Power - Max:65 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Similar Products

Part Number TIP41C PBFREE TIP42C PBFREE TIP31C PBFREE TIP41 PBFREE TIP41A PBFREE TIP41B PBFREE
Manufacturer Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp
Product Status Active Active Active Active Active Active
Transistor Type NPN PNP NPN NPN NPN NPN
Current - Collector (Ic) (Max) 6 A 6 A 3 A 6 A 6 A 6 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 40 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A 1.5V @ 600mA, 6A 1.2V @ 375mA, 3A 1.5V @ 600mA, 6A 1.5V @ 600mA, 6A 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max) 700µA 400µA 300µA 700µA 700µA 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 4V 30 @ 300mA, 4V 25 @ 1A, 4V 30 @ 300mA, 4V 30 @ 300mA, 4V 30 @ 300mA, 4V
Power - Max 65 W 65 W 40 W 65 W 65 W 65 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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