Overview
The 1N5352B TR is a small signal transistor manufactured by Central Semiconductor Corp. This transistor is part of the extensive range of discrete semiconductor products offered by Central Semiconductor. It is housed in a TO-18 case, which is a common package for small signal transistors due to its compact size and thermal efficiency.
The 1N5352B TR is designed to meet various electronic circuit requirements, particularly in applications where low noise and high reliability are crucial. Central Semiconductor is known for its commitment to producing high-quality semiconductor devices, ensuring that the 1N5352B TR meets stringent industry standards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| BVCEO (Collector-Base Voltage) | 60 | V |
| BVEBO (Emitter-Base Voltage) | 5.0 | V |
| ICBO (Collector Current at VCB) | 0.01 | mA |
| hFE (Current Gain) | 60-120 | - |
| VCE(SAT) (Collector-Emitter Saturation Voltage) | 0.6 | V |
| fT (Transition Frequency) | 150 | MHz |
| Cob (Output Capacitance) | 15 | pF |
| ton (Turn-On Time) | - | ns |
| toff (Turn-Off Time) | - | ns |
| NF (Noise Figure) | - | dB |
Key Features
- Compact TO-18 Case: Suitable for applications where space is limited.
- High Current Gain (hFE): Ranges from 60 to 120, ensuring reliable amplification.
- Low Collector-Emitter Saturation Voltage (VCE(SAT)): 0.6V, which helps in reducing power consumption.
- High Transition Frequency (fT): 150 MHz, making it suitable for high-frequency applications.
- Low Output Capacitance (Cob): 15 pF, which is beneficial for high-speed switching applications.
Applications
- Amplifier Circuits: Suitable for use in amplifier stages due to its high current gain and low noise characteristics.
- Switching Circuits: Can be used in switching applications due to its fast turn-on and turn-off times.
- High-Frequency Circuits: Appropriate for high-frequency applications such as RF amplifiers and oscillators.
- General Electronics: Can be used in a variety of general electronic circuits requiring small signal transistors.
Q & A
- What is the package type of the 1N5352B TR transistor?
The 1N5352B TR transistor is housed in a TO-18 case.
- What is the maximum collector-base voltage (BVCEO) for the 1N5352B TR?
The maximum collector-base voltage (BVCEO) is 60V.
- What is the typical current gain (hFE) of the 1N5352B TR?
The typical current gain (hFE) ranges from 60 to 120.
- What is the collector-emitter saturation voltage (VCE(SAT)) for the 1N5352B TR?
The collector-emitter saturation voltage (VCE(SAT)) is 0.6V.
- What is the transition frequency (fT) of the 1N5352B TR?
The transition frequency (fT) is 150 MHz.
- What are the typical applications of the 1N5352B TR transistor?
It is suitable for amplifier circuits, switching circuits, high-frequency circuits, and general electronic circuits.
- Why is the TO-18 case used for the 1N5352B TR transistor?
The TO-18 case is used due to its compact size and thermal efficiency, making it suitable for applications where space is limited.
- What is the output capacitance (Cob) of the 1N5352B TR transistor?
The output capacitance (Cob) is 15 pF.
- Is the 1N5352B TR transistor suitable for high-frequency applications?
Yes, it is suitable for high-frequency applications due to its high transition frequency (fT) of 150 MHz.
- Who manufactures the 1N5352B TR transistor?
The 1N5352B TR transistor is manufactured by Central Semiconductor Corp.
