1N4001G BK
  • Share:

Central Semiconductor Corp 1N4001G BK

Manufacturer No:
1N4001G BK
Manufacturer:
Central Semiconductor Corp
Package:
Bulk
Description:
DIODE GEN PURPOSE DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001G BK diode, produced by Central Semiconductor Corp, is a versatile and reliable component widely used in electronic circuits. It belongs to the 1N400x series of silicon rectifier diodes, known for their durability and effectiveness in power rectification. This diode is primarily used for converting alternating current (AC) to direct current (DC) and is suitable for various low-to-moderate current applications such as power supplies, chargers, and adapters.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (V_R) 50 V
RMS Reverse Voltage (V_RMS) 35 V
Average Rectified Output Current (I_O) 1 A
Non-Repetitive Peak Forward Surge Current (I_FSM) 30 A (8.3ms half-sine wave)
Forward Voltage (V_F) at I_F = 1A 1.1 V
Reverse Current (I_R) at 50V 5µA A
Power Dissipation (P_D) 2.5 W
Operating Temperature Range -65°C to +150°C °C
Storage Temperature Range -65°C to +150°C °C
Reverse Recovery Time (t_rr) 2µs s

Key Features

  • High Surge Current Capability: The diode can handle a peak surge current of 30A for 8.3ms, protecting against sudden power spikes and enhancing circuit reliability.
  • Low Forward Voltage Drop: With a forward voltage drop of 1.1V at 1A, the diode minimizes energy loss as heat, making it energy-efficient.
  • High Reverse Voltage Rating: The diode can handle repetitive reverse voltages up to 50V, making it suitable for a wide range of rectification and blocking applications.
  • Low Reverse Leakage Current: The diode has a minimal reverse leakage current of 5µA at 50V, ensuring high efficiency in blocking reverse current.
  • High Average Forward Current: The diode can handle an average forward current of 1A, making it suitable for low-to-moderate current applications.
  • Robust Thermal Management: The diode operates safely within a temperature range of -65°C to +150°C, ensuring reliability in various environmental conditions.
  • Fast Recovery Time: The diode has a fast recovery time of 2µs, which is crucial for high-speed switching applications to reduce switching losses.
  • DO-41 Package: The diode is housed in a DO-41 package, which is versatile and easy to mount in both through-hole and surface-mount applications.
  • Durability and Reliability: Known for its rugged design, the 1N4001G BK diode ensures consistent performance over time, reducing the need for frequent replacements.

Applications

The 1N4001G BK diode is widely used in various electronic circuits, including:

  • Power supply circuits for converting AC to DC.
  • Chargers and adapters.
  • Rectification tasks in low-power applications.
  • Circuits requiring surge current protection.
  • Consumer electronics and industrial systems.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4001G BK diode?

    The peak repetitive reverse voltage is 50V.

  2. What is the average rectified output current of the 1N4001G BK diode?

    The average rectified output current is 1A.

  3. How much surge current can the 1N4001G BK diode handle?

    The diode can handle a peak surge current of 30A for 8.3ms.

  4. What is the forward voltage drop of the 1N4001G BK diode at 1A?

    The forward voltage drop is 1.1V at 1A.

  5. What is the reverse leakage current of the 1N4001G BK diode at 50V?

    The reverse leakage current is 5µA at 50V.

  6. What is the operating temperature range of the 1N4001G BK diode?

    The operating temperature range is -65°C to +150°C.

  7. What is the package type of the 1N4001G BK diode?

    The diode is housed in a DO-41 package.

  8. Is the 1N4001G BK diode still in production?

    No, the 1N4001 series, except for part # 1N4007 BK/TR, was discontinued on June 14, 2016, and is now classified as End of Life (EOL).

  9. What are some common applications of the 1N4001G BK diode?

    Common applications include power supply circuits, chargers, adapters, and rectification tasks in low-power applications.

  10. What are the key features of the 1N4001G BK diode?

    Key features include high surge current capability, low forward voltage drop, high reverse voltage rating, low reverse leakage current, high average forward current, robust thermal management, fast recovery time, and durability.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
393

Please send RFQ , we will respond immediately.

Same Series
1N4002G BK
1N4002G BK
DIODE GEN PURPOSE DO41
1N4003G BK
1N4003G BK
DIODE GEN PURPOSE DO41
1N4004G BK
1N4004G BK
DIODE GEN PURP 400V 1A DO41
1N4005G BK
1N4005G BK
DIODE GEN PURPOSE DO41
1N4006G BK
1N4006G BK
DIODE GEN PURPOSE DO41

Similar Products

Part Number 1N4001G BK 1N4002G BK 1N4001 BK
Manufacturer Central Semiconductor Corp Central Semiconductor Corp Central Semiconductor Corp
Product Status Obsolete Obsolete Obsolete
Diode Type - - Standard
Voltage - DC Reverse (Vr) (Max) - - 50 V
Current - Average Rectified (Io) - - 1A
Voltage - Forward (Vf) (Max) @ If - - 1.1 V @ 1 A
Speed - - Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr - - 5 µA @ 50 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41
Operating Temperature - Junction - - -65°C ~ 175°C

Related Product By Categories

1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

1N34A BK
1N34A BK
Central Semiconductor Corp
DIODE GEN PURP 75V 50MA DO7
1N4001G BK
1N4001G BK
Central Semiconductor Corp
DIODE GEN PURPOSE DO41
1N5242B TR PBFREE
1N5242B TR PBFREE
Central Semiconductor Corp
DIODE ZENER 12V 500MW DO35
1N4733A BK PBFREE
1N4733A BK PBFREE
Central Semiconductor Corp
DIODE ZENER 5.1V 1W DO41
BZX84C6V8 TR PBFREE
BZX84C6V8 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 6.8V 350MW SOT23
BZX84C15 BK PBFREE
BZX84C15 BK PBFREE
Central Semiconductor Corp
DIODE ZENER 15V 350MW SOT23
BZX84C3V0 TR
BZX84C3V0 TR
Central Semiconductor Corp
DIODE ZENER 3V 350MW SOT23
BZX84C3V3 TR
BZX84C3V3 TR
Central Semiconductor Corp
DIODE ZENER 3.3V 350MW SOT23
2N1711 PBFREE
2N1711 PBFREE
Central Semiconductor Corp
TRANS NPN 50V 0.5A TO39
TIP125 SL TIN/LEAD
TIP125 SL TIN/LEAD
Central Semiconductor Corp
TRANS NPN DARL 60V 5A TO220-3
2N3055 PBFREE
2N3055 PBFREE
Central Semiconductor Corp
TRANS NPN 70V 15A TO3
BCX56-10 TR
BCX56-10 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89