Overview
The 2N2907A W/GOLD, produced by Central Semiconductor Corp, is a silicon PNP epitaxial planar transistor designed for small signal and general purpose switching applications. This transistor is housed in a TO-18 metal case and is known for its high speed saturated switching capabilities. It is suitable for a wide range of electronic circuits requiring reliable and efficient transistor performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 60 | V |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5.0 | V |
| Continuous Collector Current (IC) | 600 | mA |
| Power Dissipation (PD) at TA=25°C | 400 | mW |
| Power Dissipation (PD) at TC=25°C | 1.8 | W |
| Operating and Storage Junction Temperature (TJ, Tstg) | -65 to +200 | °C |
| Thermal Resistance (ΘJA) | 438 | °C/W |
| Thermal Resistance (ΘJC) | 97 | °C/W |
| Collector Cut-off Current (ICBO) at VCB=50V | - 20 nA | |
| Collector-Emitter Saturation Voltage (VCE(SAT)) at IC=150mA, IB=15mA | - 0.4 V | |
| Current Gain (hFE) at VCE=10V, IC=150mA | 100 - 300 | |
| Transition Frequency (fT) at VCE=20V, IC=50mA, f=100MHz | 200 MHz |
Key Features
- High speed saturated switching capabilities.
- Designed for small signal and general purpose switching applications.
- Housed in a TO-18 metal case.
- High current gain (hFE) with values ranging from 100 to 300 at VCE=10V and IC=150mA.
- Low collector-emitter saturation voltage (VCE(SAT)) of 0.4V at IC=150mA and IB=15mA.
- High transition frequency (fT) of 200 MHz at VCE=20V and IC=50mA.
Applications
The 2N2907A W/GOLD transistor is versatile and can be used in various electronic circuits, including:
- Small signal amplification.
- General purpose switching.
- High speed saturated switching applications.
- Audio and video circuits.
- Automotive and industrial control systems.
Q & A
- What is the collector-base voltage rating of the 2N2907A transistor?
The collector-base voltage (VCBO) is rated at 60V. - What is the maximum continuous collector current for the 2N2907A?
The maximum continuous collector current (IC) is 600 mA. - What is the power dissipation rating at ambient temperature for the 2N2907A?
The power dissipation (PD) at TA=25°C is 400 mW, and at TC=25°C it is 1.8 W. - What is the operating junction temperature range for the 2N2907A?
The operating and storage junction temperature range is -65 to +200 °C. - What is the thermal resistance from junction to ambient for the 2N2907A?
The thermal resistance from junction to ambient (ΘJA) is 438 °C/W. - What is the transition frequency of the 2N2907A transistor?
The transition frequency (fT) is 200 MHz at VCE=20V, IC=50mA, and f=100MHz. - What is the typical collector-emitter saturation voltage for the 2N2907A?
The collector-emitter saturation voltage (VCE(SAT)) is typically 0.4V at IC=150mA and IB=15mA. - What is the current gain (hFE) of the 2N2907A transistor?
The current gain (hFE) ranges from 100 to 300 at VCE=10V and IC=150mA. - In what type of case is the 2N2907A transistor housed?
The 2N2907A transistor is housed in a TO-18 metal case. - What are some common applications of the 2N2907A transistor?
The 2N2907A is commonly used in small signal amplification, general purpose switching, high speed saturated switching, audio and video circuits, and automotive and industrial control systems.
