Central Semiconductor Corp 2N3055 PBFREE

The 2N3055 PBFREE, produced by Central Semiconductor Corp, is a silicon NPN power transistor designed with an epitaxial-base planar structure. Enclosed in a TO-3 metal case, this transistor is known for its durability and reliability in various power applications. It is particularly useful for tasks involving power switching, series and shunt regulators, output stages, and high-fidelity amplifiers. The 2N3055 has a complementary PNP transistor, the MJ2955, which makes it versatile for circuits requiring both NPN and PNP transistors.

• Medium Power Handling: The 2N3055 is designed to handle medium power levels, making it suitable for a variety of circuits where moderate power is required.
• Low Collector-Emitter Saturation Voltage: This feature reduces the voltage lost across the transistor when it is in the 'on' state, improving efficiency and minimizing power loss.
• High DC Current Gain (hFE): With a DC current gain of up to 70, the 2N3055 can effectively amplify input currents, making it suitable for applications requiring strong current amplification.
• Improved Linearity: The transistor offers improved linearity, ensuring predictable and consistent operation, especially beneficial in amplifier circuits.
• Pb-free Packages: Available in lead-free packages, the 2N3055 is a safer option for projects where reducing harmful materials is a priority.
• Wide Operating Temperature Range: The transistor can operate in a broad temperature range from -65°C to +200°C, making it suitable for use in extreme environments.
• High Power Dissipation: The 2N3055 can dissipate up to 115W, allowing it to manage significant power without overheating.

• Power Switching Circuits: The 2N3055 is ideal for power switching applications due to its high current and voltage handling capabilities.
• Series and Shunt Regulators: It is used in voltage regulation circuits to provide stable output voltages.
• Output Stages: Suitable for output stages in amplifiers where high current and voltage are required.
• High-Fidelity Amplifiers: Its improved linearity and low collector-emitter saturation voltage make it a good choice for high-fidelity amplifier circuits.
• Motor Control: Can be used as a basic switching device to drive motors in various applications.

1. What is the collector-emitter breakdown voltage of the 2N3055 transistor?

   The collector-emitter breakdown voltage of the 2N3055 transistor is 60V.

2. What is the maximum collector current the 2N3055 can handle?

   The 2N3055 can handle a maximum collector current of 15A.

3. What is the operating temperature range of the 2N3055 transistor?

   The operating temperature range of the 2N3055 transistor is from -65°C to +200°C.

4. Is the 2N3055 available in lead-free packages?

   Yes, the 2N3055 is available in lead-free packages.

5. What is the maximum power dissipation of the 2N3055 transistor?

   The maximum power dissipation of the 2N3055 transistor is 115W.

6. What is the DC current gain (hFE) of the 2N3055 transistor?

   The DC current gain (hFE) of the 2N3055 transistor is up to 70.

7. What are some common applications of the 2N3055 transistor?

   The 2N3055 is commonly used in power switching circuits, series and shunt regulators, output stages, and high-fidelity amplifiers.

8. What is the complementary PNP transistor to the 2N3055?

   The complementary PNP transistor to the 2N3055 is the MJ2955.

9. What is the collector base voltage (VCBO) of the 2N3055 transistor?

   The collector base voltage (VCBO) of the 2N3055 transistor is 100V.

10. What is the emitter base voltage (VEBO) of the 2N3055 transistor?

    The emitter base voltage (VEBO) of the 2N3055 transistor is 7V.