Overview
The 2N2102 PBFREE is a silicon NPN epitaxial planar transistor manufactured by Central Semiconductor Corp. This transistor is designed for high current general purpose switching applications. It is part of the TO-39 case series and is known for its robust performance and reliability in various electronic circuits.
Key Specifications
| Parameter | Symbol | Units | Minimum | Maximum |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | V | - | 120 |
| Collector-Emitter Voltage | VCER | V | - | 80 |
| Collector-Emitter Voltage | VCEO | V | - | 65 |
| Emitter-Base Voltage | VEBO | V | - | 7.0 |
| Continuous Collector Current | IC | A | - | 1.0 |
| Power Dissipation (TC=25°C) | PD | W | - | 5.0 |
| Operating and Storage Junction Temperature | TJ, Tstg | °C | -65 | 200 |
| Thermal Resistance (Junction to Ambient) | ΘJA | °C/W | - | 175 |
| Thermal Resistance (Junction to Case) | ΘJC | °C/W | - | 35 |
| Saturation Voltage (Collector-Emitter) | VCE(SAT) | V | 0.5 (2N2102), 0.3 (2N2102A) | - |
| Saturation Voltage (Base-Emitter) | VBE(SAT) | V | - | 1.1 |
| Current Gain (hFE) | hFE | - | 10 | 200 |
Key Features
- High Current Capability: The 2N2102 PBFREE can handle a continuous collector current of up to 1.0 A, making it suitable for high current applications.
- High Voltage Ratings: With collector-base, collector-emitter, and emitter-base voltage ratings of 120 V, 80 V, and 7.0 V respectively, this transistor is robust against voltage spikes.
- Low Saturation Voltage: The transistor has a low saturation voltage (VCE(SAT)) of 0.5 V for the 2N2102 and 0.3 V for the 2N2102A, which minimizes power loss in switching applications.
- Wide Operating Temperature Range: It operates over a temperature range of -65°C to +200°C, making it versatile for various environmental conditions.
- Lead-Free Option: The PBFREE version is lead-free, complying with RoHS standards and making it suitable for modern electronic designs.
Applications
- General Purpose Switching: The 2N2102 PBFREE is designed for high current general purpose switching applications, making it ideal for power management, motor control, and other high current switching circuits.
- Amplifier Circuits: Its high current gain and low saturation voltage make it suitable for amplifier circuits where high current and low power loss are required.
- Power Electronics: It can be used in various power electronic applications such as DC-DC converters, power supplies, and other high current devices.
- Automotive and Industrial Control: The transistor's robustness and wide operating temperature range make it a good choice for automotive and industrial control systems.
Q & A
- What is the maximum collector current of the 2N2102 PBFREE?
The maximum continuous collector current is 1.0 A.
- What are the voltage ratings for the 2N2102 PBFREE?
The collector-base voltage (VCBO) is 120 V, collector-emitter voltage (VCER) is 80 V, and emitter-base voltage (VEBO) is 7.0 V.
- What is the saturation voltage (VCE(SAT)) for the 2N2102 and 2N2102A?
The VCE(SAT) is 0.5 V for the 2N2102 and 0.3 V for the 2N2102A.
- What is the operating temperature range of the 2N2102 PBFREE?
The operating temperature range is -65°C to +200°C.
- Is the 2N2102 PBFREE lead-free?
Yes, the PBFREE version is lead-free and complies with RoHS standards.
- What is the thermal resistance (ΘJA) of the 2N2102 PBFREE?
The thermal resistance (ΘJA) is 175 °C/W.
- What are some common applications of the 2N2102 PBFREE?
It is commonly used in general purpose switching, amplifier circuits, power electronics, and automotive and industrial control systems.
- What is the power dissipation (PD) of the 2N2102 PBFREE at TC=25°C?
The power dissipation (PD) is 5.0 W at TC=25°C.
- What is the current gain (hFE) range of the 2N2102 PBFREE?
The current gain (hFE) ranges from 10 to 200.
- What package type does the 2N2102 PBFREE come in?
The 2N2102 PBFREE comes in a TO-39 case.
