BC857BR TR PBFREE
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Central Semiconductor Corp BC857BR TR PBFREE

Manufacturer No:
BC857BR TR PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BR TR PBFREE is a PNP general-purpose transistor manufactured by Central Semiconductor Corp. It is part of the BC857 series, which includes several variants designed for various applications. These transistors are produced using the epitaxial planar process and are epoxy molded in a surface mount SOT-23 package. They are suitable for general-purpose switching and amplifier applications.

Key Specifications

ParameterBC857Unit
Collector-Base Voltage (VCBO)50V
Collector-Emitter Voltage (VCEO)45V
Emitter-Base Voltage (VEBO)5.0V
Continuous Collector Current (IC)100mA
Peak Collector Current (ICM)200mA
Peak Base Current (IBM)200mA
Power Dissipation (PD)330mW
Operating and Storage Junction Temperature (TJ, Tstg)-55 to +150°C
Thermal Resistance (ΘJA)375°C/W
Collector-Base Breakdown Voltage (V(BR)CBO)50V
Collector-Emitter Breakdown Voltage (V(BR)CEO)45V
DC Current Gain (hFE)220 - 800
Collector-Emitter Saturation Voltage (VCE(SAT))0.30 - 0.65V
Base-Emitter Saturation Voltage (VBE(SAT))0.7 - 0.9V

Key Features

  • PNP Transistor: The BC857BR is a PNP bipolar junction transistor, suitable for a wide range of applications.
  • Surface Mount Package: It is packaged in a SOT-23 surface mount case, making it ideal for modern PCB designs.
  • General Purpose: Designed for general-purpose switching and amplifier applications.
  • High Current Gain: Offers a DC current gain (hFE) ranging from 220 to 800, depending on the specific variant.
  • Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages, enhancing efficiency in switching applications.
  • Lead-Free Option: Available in a lead-free (PBFREE) version, making it compliant with environmental regulations.

Applications

  • Switching Circuits: Suitable for use in various switching circuits due to its high current gain and low saturation voltages.
  • Amplifier Circuits: Can be used in amplifier circuits requiring a PNP transistor with good stability and reliability.
  • Consumer Electronics: Often used in consumer electronics such as audio equipment, power supplies, and other general-purpose electronic devices.
  • Industrial and Medical Devices: Applicable in industrial and medical devices where reliability and performance are critical.

Q & A

  1. What is the package type of the BC857BR transistor?
    The BC857BR transistor is packaged in a SOT-23 surface mount case.
  2. What is the maximum collector-emitter voltage (VCEO) for the BC857BR?
    The maximum collector-emitter voltage (VCEO) for the BC857BR is 45 V.
  3. What is the continuous collector current (IC) rating for the BC857BR?
    The continuous collector current (IC) rating for the BC857BR is 100 mA.
  4. What is the peak collector current (ICM) rating for the BC857BR?
    The peak collector current (ICM) rating for the BC857BR is 200 mA.
  5. What is the operating temperature range for the BC857BR?
    The operating temperature range for the BC857BR is -55 to +150 °C.
  6. What is the thermal resistance (ΘJA) of the BC857BR?
    The thermal resistance (ΘJA) of the BC857BR is 375 °C/W.
  7. Is the BC857BR available in a lead-free version?
    Yes, the BC857BR is available in a lead-free (PBFREE) version.
  8. What is the typical DC current gain (hFE) for the BC857BR?
    The typical DC current gain (hFE) for the BC857BR ranges from 220 to 800.
  9. What are the typical collector-emitter and base-emitter saturation voltages for the BC857BR?
    The typical collector-emitter saturation voltage (VCE(SAT)) is 0.30 - 0.65 V, and the base-emitter saturation voltage (VBE(SAT)) is 0.7 - 0.9 V.
  10. In what types of applications is the BC857BR commonly used?
    The BC857BR is commonly used in switching circuits, amplifier circuits, consumer electronics, and industrial and medical devices.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:350 mW
Frequency - Transition:100MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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