BC857BR TR PBFREE
  • Share:

Central Semiconductor Corp BC857BR TR PBFREE

Manufacturer No:
BC857BR TR PBFREE
Manufacturer:
Central Semiconductor Corp
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BR TR PBFREE is a PNP general-purpose transistor manufactured by Central Semiconductor Corp. It is part of the BC857 series, which includes several variants designed for various applications. These transistors are produced using the epitaxial planar process and are epoxy molded in a surface mount SOT-23 package. They are suitable for general-purpose switching and amplifier applications.

Key Specifications

ParameterBC857Unit
Collector-Base Voltage (VCBO)50V
Collector-Emitter Voltage (VCEO)45V
Emitter-Base Voltage (VEBO)5.0V
Continuous Collector Current (IC)100mA
Peak Collector Current (ICM)200mA
Peak Base Current (IBM)200mA
Power Dissipation (PD)330mW
Operating and Storage Junction Temperature (TJ, Tstg)-55 to +150°C
Thermal Resistance (ΘJA)375°C/W
Collector-Base Breakdown Voltage (V(BR)CBO)50V
Collector-Emitter Breakdown Voltage (V(BR)CEO)45V
DC Current Gain (hFE)220 - 800
Collector-Emitter Saturation Voltage (VCE(SAT))0.30 - 0.65V
Base-Emitter Saturation Voltage (VBE(SAT))0.7 - 0.9V

Key Features

  • PNP Transistor: The BC857BR is a PNP bipolar junction transistor, suitable for a wide range of applications.
  • Surface Mount Package: It is packaged in a SOT-23 surface mount case, making it ideal for modern PCB designs.
  • General Purpose: Designed for general-purpose switching and amplifier applications.
  • High Current Gain: Offers a DC current gain (hFE) ranging from 220 to 800, depending on the specific variant.
  • Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages, enhancing efficiency in switching applications.
  • Lead-Free Option: Available in a lead-free (PBFREE) version, making it compliant with environmental regulations.

Applications

  • Switching Circuits: Suitable for use in various switching circuits due to its high current gain and low saturation voltages.
  • Amplifier Circuits: Can be used in amplifier circuits requiring a PNP transistor with good stability and reliability.
  • Consumer Electronics: Often used in consumer electronics such as audio equipment, power supplies, and other general-purpose electronic devices.
  • Industrial and Medical Devices: Applicable in industrial and medical devices where reliability and performance are critical.

Q & A

  1. What is the package type of the BC857BR transistor?
    The BC857BR transistor is packaged in a SOT-23 surface mount case.
  2. What is the maximum collector-emitter voltage (VCEO) for the BC857BR?
    The maximum collector-emitter voltage (VCEO) for the BC857BR is 45 V.
  3. What is the continuous collector current (IC) rating for the BC857BR?
    The continuous collector current (IC) rating for the BC857BR is 100 mA.
  4. What is the peak collector current (ICM) rating for the BC857BR?
    The peak collector current (ICM) rating for the BC857BR is 200 mA.
  5. What is the operating temperature range for the BC857BR?
    The operating temperature range for the BC857BR is -55 to +150 °C.
  6. What is the thermal resistance (ΘJA) of the BC857BR?
    The thermal resistance (ΘJA) of the BC857BR is 375 °C/W.
  7. Is the BC857BR available in a lead-free version?
    Yes, the BC857BR is available in a lead-free (PBFREE) version.
  8. What is the typical DC current gain (hFE) for the BC857BR?
    The typical DC current gain (hFE) for the BC857BR ranges from 220 to 800.
  9. What are the typical collector-emitter and base-emitter saturation voltages for the BC857BR?
    The typical collector-emitter saturation voltage (VCE(SAT)) is 0.30 - 0.65 V, and the base-emitter saturation voltage (VBE(SAT)) is 0.7 - 0.9 V.
  10. In what types of applications is the BC857BR commonly used?
    The BC857BR is commonly used in switching circuits, amplifier circuits, consumer electronics, and industrial and medical devices.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:350 mW
Frequency - Transition:100MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.41
1,495

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BC846AW,115
BC846AW,115
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BC807-25B5000
BC807-25B5000
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC859C_R1_00001
BC859C_R1_00001
Panjit International Inc.
TRANS PNP 30V 0.1A SOT23
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

1N4002GL TR
1N4002GL TR
Central Semiconductor Corp
DIODE GEN PURP 100V 1A DO41
1N4004GPP TR
1N4004GPP TR
Central Semiconductor Corp
DIODE GEN PURP 400V 1A DO41
1N4007GPP TR
1N4007GPP TR
Central Semiconductor Corp
DIODE GEN PURP 1KV 1A DO41
BZX84C15 TR PBFREE
BZX84C15 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 15V 350MW SOT23
BZX84C3V9 TR PBFREE
BZX84C3V9 TR PBFREE
Central Semiconductor Corp
DIODE ZENER 3.9V 350MW SOT23
1N4733A BK PBFREE
1N4733A BK PBFREE
Central Semiconductor Corp
DIODE ZENER 5.1V 1W DO41
1N5333B BK
1N5333B BK
Central Semiconductor Corp
TRANSISTOR
1N5339B BK
1N5339B BK
Central Semiconductor Corp
TRANSISTOR
TIP32C PBFREE
TIP32C PBFREE
Central Semiconductor Corp
TRANS PNP 100V 3A TO220-3
TIP102 PBFREE
TIP102 PBFREE
Central Semiconductor Corp
TRANS NPN DARL 100V 8A TO220-3
BCX56 BK
BCX56 BK
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89