NTLUS3A18PZTBG
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onsemi NTLUS3A18PZTBG

Manufacturer No:
NTLUS3A18PZTBG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 5.1A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLUS3A18PZTBG is a P-Channel MOSFET manufactured by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET is packaged in a 6-UDFN (2x2) surface mount configuration, making it suitable for space-constrained designs. Although this product is currently listed as obsolete, it remains relevant for existing projects and legacy systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20 V
ID (Continuous Drain Current at TA)5.1 A
RDS(ON) (On-Resistance at VGS = -10 V)25 mΩ
PD (Power Dissipation at TA)700 mW
Package Type6-UDFN (2x2)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(ON)) of 25 mΩ at VGS = -10 V, enhancing efficiency in power applications.
  • High continuous drain current (ID) of 5.1 A, suitable for high-current applications.
  • Compact 6-UDFN (2x2) package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 150°C, making it versatile for various environments.

Applications

The NTLUS3A18PZTBG MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Audio and video switching.
  • General-purpose power switching in industrial and consumer electronics.

Q & A

  1. What is the drain-source voltage rating of the NTLUS3A18PZTBG MOSFET?
    The drain-source voltage rating is -20 V.
  2. What is the continuous drain current at ambient temperature for this MOSFET?
    The continuous drain current at ambient temperature is 5.1 A.
  3. What is the on-resistance of the NTLUS3A18PZTBG at VGS = -10 V?
    The on-resistance is 25 mΩ at VGS = -10 V.
  4. In what package is the NTLUS3A18PZTBG MOSFET available?
    The MOSFET is available in a 6-UDFN (2x2) surface mount package.
  5. What is the power dissipation at ambient temperature for this device?
    The power dissipation at ambient temperature is 700 mW.
  6. What is the operating temperature range of the NTLUS3A18PZTBG?
    The operating temperature range is from -55°C to 150°C.
  7. Is the NTLUS3A18PZTBG still in production?
    No, this product is currently listed as obsolete.
  8. Where can I find detailed specifications for the NTLUS3A18PZTBG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. What are some common applications for the NTLUS3A18PZTBG MOSFET?
    Common applications include power management, DC-DC converters, motor control, and general-purpose power switching.
  10. Why is the 6-UDFN package beneficial for this MOSFET?
    The 6-UDFN package is beneficial due to its compact size, making it ideal for space-constrained designs.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2240 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (2x2)
Package / Case:6-UDFN Exposed Pad
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Same Series
NTLUS3A18PZTCG
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MOSFET P-CH 20V 5.1A 6UDFN
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MOSFET P-CH 20V 5.1A 6UDFN

Similar Products

Part Number NTLUS3A18PZTBG NTLUS3A18PZTCG NTLUS3C18PZTBG NTLUS3A18PZCTBG NTLUS3A18PZTAG
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 12 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) 5.1A (Ta) 4.4A (Ta) 5.1A (Ta) 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 18mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V 24mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V 28 nC @ 4.5 V 15.8 nC @ 4.5 V 28 nC @ 4.5 V 28 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2240 pF @ 15 V 2240 pF @ 15 V 1570 pF @ 6 V 2240 pF @ 15 V 2240 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta) 660mW (Ta) - 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-UDFN (2x2) 6-UDFN (2x2) 6-UDFN (1.6x1.6) 6-UDFN (2x2) 6-UDFN (2x2)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-PowerUFDFN 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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