NTLUS3A18PZTBG
  • Share:

onsemi NTLUS3A18PZTBG

Manufacturer No:
NTLUS3A18PZTBG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 5.1A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLUS3A18PZTBG is a P-Channel MOSFET manufactured by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET is packaged in a 6-UDFN (2x2) surface mount configuration, making it suitable for space-constrained designs. Although this product is currently listed as obsolete, it remains relevant for existing projects and legacy systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20 V
ID (Continuous Drain Current at TA)5.1 A
RDS(ON) (On-Resistance at VGS = -10 V)25 mΩ
PD (Power Dissipation at TA)700 mW
Package Type6-UDFN (2x2)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(ON)) of 25 mΩ at VGS = -10 V, enhancing efficiency in power applications.
  • High continuous drain current (ID) of 5.1 A, suitable for high-current applications.
  • Compact 6-UDFN (2x2) package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 150°C, making it versatile for various environments.

Applications

The NTLUS3A18PZTBG MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Audio and video switching.
  • General-purpose power switching in industrial and consumer electronics.

Q & A

  1. What is the drain-source voltage rating of the NTLUS3A18PZTBG MOSFET?
    The drain-source voltage rating is -20 V.
  2. What is the continuous drain current at ambient temperature for this MOSFET?
    The continuous drain current at ambient temperature is 5.1 A.
  3. What is the on-resistance of the NTLUS3A18PZTBG at VGS = -10 V?
    The on-resistance is 25 mΩ at VGS = -10 V.
  4. In what package is the NTLUS3A18PZTBG MOSFET available?
    The MOSFET is available in a 6-UDFN (2x2) surface mount package.
  5. What is the power dissipation at ambient temperature for this device?
    The power dissipation at ambient temperature is 700 mW.
  6. What is the operating temperature range of the NTLUS3A18PZTBG?
    The operating temperature range is from -55°C to 150°C.
  7. Is the NTLUS3A18PZTBG still in production?
    No, this product is currently listed as obsolete.
  8. Where can I find detailed specifications for the NTLUS3A18PZTBG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. What are some common applications for the NTLUS3A18PZTBG MOSFET?
    Common applications include power management, DC-DC converters, motor control, and general-purpose power switching.
  10. Why is the 6-UDFN package beneficial for this MOSFET?
    The 6-UDFN package is beneficial due to its compact size, making it ideal for space-constrained designs.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2240 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (2x2)
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.27
1,833

Please send RFQ , we will respond immediately.

Same Series
NTLUS3A18PZTCG
NTLUS3A18PZTCG
MOSFET P-CH 20V 5.1A 6UDFN
NTLUS3A18PZTBG
NTLUS3A18PZTBG
MOSFET P-CH 20V 5.1A 6UDFN

Similar Products

Part Number NTLUS3A18PZTBG NTLUS3A18PZTCG NTLUS3C18PZTBG NTLUS3A18PZCTBG NTLUS3A18PZTAG
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 12 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) 5.1A (Ta) 4.4A (Ta) 5.1A (Ta) 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 18mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V 24mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V 28 nC @ 4.5 V 15.8 nC @ 4.5 V 28 nC @ 4.5 V 28 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2240 pF @ 15 V 2240 pF @ 15 V 1570 pF @ 6 V 2240 pF @ 15 V 2240 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta) 660mW (Ta) - 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-UDFN (2x2) 6-UDFN (2x2) 6-UDFN (1.6x1.6) 6-UDFN (2x2) 6-UDFN (2x2)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-PowerUFDFN 6-UDFN Exposed Pad 6-UDFN Exposed Pad

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC