NTLUS3A18PZTBG
  • Share:

onsemi NTLUS3A18PZTBG

Manufacturer No:
NTLUS3A18PZTBG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 5.1A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLUS3A18PZTBG is a P-Channel MOSFET manufactured by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET is packaged in a 6-UDFN (2x2) surface mount configuration, making it suitable for space-constrained designs. Although this product is currently listed as obsolete, it remains relevant for existing projects and legacy systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20 V
ID (Continuous Drain Current at TA)5.1 A
RDS(ON) (On-Resistance at VGS = -10 V)25 mΩ
PD (Power Dissipation at TA)700 mW
Package Type6-UDFN (2x2)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(ON)) of 25 mΩ at VGS = -10 V, enhancing efficiency in power applications.
  • High continuous drain current (ID) of 5.1 A, suitable for high-current applications.
  • Compact 6-UDFN (2x2) package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 150°C, making it versatile for various environments.

Applications

The NTLUS3A18PZTBG MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Audio and video switching.
  • General-purpose power switching in industrial and consumer electronics.

Q & A

  1. What is the drain-source voltage rating of the NTLUS3A18PZTBG MOSFET?
    The drain-source voltage rating is -20 V.
  2. What is the continuous drain current at ambient temperature for this MOSFET?
    The continuous drain current at ambient temperature is 5.1 A.
  3. What is the on-resistance of the NTLUS3A18PZTBG at VGS = -10 V?
    The on-resistance is 25 mΩ at VGS = -10 V.
  4. In what package is the NTLUS3A18PZTBG MOSFET available?
    The MOSFET is available in a 6-UDFN (2x2) surface mount package.
  5. What is the power dissipation at ambient temperature for this device?
    The power dissipation at ambient temperature is 700 mW.
  6. What is the operating temperature range of the NTLUS3A18PZTBG?
    The operating temperature range is from -55°C to 150°C.
  7. Is the NTLUS3A18PZTBG still in production?
    No, this product is currently listed as obsolete.
  8. Where can I find detailed specifications for the NTLUS3A18PZTBG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. What are some common applications for the NTLUS3A18PZTBG MOSFET?
    Common applications include power management, DC-DC converters, motor control, and general-purpose power switching.
  10. Why is the 6-UDFN package beneficial for this MOSFET?
    The 6-UDFN package is beneficial due to its compact size, making it ideal for space-constrained designs.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2240 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (2x2)
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.27
1,833

Please send RFQ , we will respond immediately.

Same Series
NTLUS3A18PZTCG
NTLUS3A18PZTCG
MOSFET P-CH 20V 5.1A 6UDFN
NTLUS3A18PZTBG
NTLUS3A18PZTBG
MOSFET P-CH 20V 5.1A 6UDFN

Similar Products

Part Number NTLUS3A18PZTBG NTLUS3A18PZTCG NTLUS3C18PZTBG NTLUS3A18PZCTBG NTLUS3A18PZTAG
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 12 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) 5.1A (Ta) 4.4A (Ta) 5.1A (Ta) 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.8V, 4.5V 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 18mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V 24mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V 18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 4.5 V 28 nC @ 4.5 V 15.8 nC @ 4.5 V 28 nC @ 4.5 V 28 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2240 pF @ 15 V 2240 pF @ 15 V 1570 pF @ 6 V 2240 pF @ 15 V 2240 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta) 660mW (Ta) - 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-UDFN (2x2) 6-UDFN (2x2) 6-UDFN (1.6x1.6) 6-UDFN (2x2) 6-UDFN (2x2)
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-PowerUFDFN 6-UDFN Exposed Pad 6-UDFN Exposed Pad

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5