1N4937G A0G
  • Share:

Taiwan Semiconductor Corporation 1N4937G A0G

Manufacturer No:
1N4937G A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937G A0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency applications, offering a combination of high reverse voltage and fast recovery time. It is particularly suited for use in power supply circuits, rectification, and other applications requiring reliable and efficient diode performance.

Key Specifications

Parameter Value Unit
Manufacturer Taiwan Semiconductor Corporation
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.2 @ 1A V
Speed Fast Recovery <= 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600V
Capacitance @ Vr, F 10 pF @ 4V, 1MHz
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole
Operating Temperature - Junction -55°C ~ 150°C

Key Features

  • High Reverse Voltage: The 1N4937G A0G has a maximum DC reverse voltage of 600V, making it suitable for high-voltage applications.
  • Fast Recovery Time: With a reverse recovery time of less than 500ns and greater than 200mA, this diode ensures efficient switching and minimal losses.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage of 1.2V at 1A, reducing energy losses in forward conduction.
  • Low Reverse Leakage Current: The reverse leakage current is 5 µA at 600V, indicating minimal current leakage in reverse bias conditions.
  • Compact Packaging: Available in DO-204AL (DO-41) and axial packages, making it versatile for various design needs.
  • Wide Operating Temperature Range: The diode operates reliably over a junction temperature range of -55°C to 150°C.

Applications

  • Power Supply Circuits: Ideal for use in power supply rectification due to its high efficiency and fast recovery characteristics.
  • Rectification: Suitable for general-purpose rectification in various electronic circuits.
  • Switching Circuits: The fast recovery time makes it suitable for high-frequency switching applications.
  • Automotive Systems: AEC-Q101 qualified versions are available, making it suitable for automotive and other high-reliability applications.

Q & A

  1. What is the maximum DC reverse voltage of the 1N4937G A0G diode?

    The maximum DC reverse voltage is 600V.

  2. What is the average rectified current (Io) of the 1N4937G A0G?

    The average rectified current (Io) is 1A.

  3. What is the forward voltage drop of the 1N4937G A0G at 1A?

    The forward voltage drop is 1.2V at 1A.

  4. What is the reverse recovery time of the 1N4937G A0G?

    The reverse recovery time is less than 500ns.

  5. What is the package type of the 1N4937G A0G?

    The diode is available in DO-204AL (DO-41) and axial packages.

  6. What is the operating temperature range of the 1N4937G A0G?

    The operating temperature range is -55°C to 150°C.

  7. Is the 1N4937G A0G suitable for automotive applications?

    Yes, AEC-Q101 qualified versions are available, making it suitable for automotive and other high-reliability applications.

  8. What is the junction capacitance of the 1N4937G A0G?

    The junction capacitance is 10 pF at 4V and 1MHz.

  9. What is the reverse leakage current of the 1N4937G A0G at 600V?

    The reverse leakage current is 5 µA at 600V.

  10. How does the 1N4937G A0G handle high-frequency switching?

    The diode's fast recovery time of less than 500ns makes it suitable for high-frequency switching applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
43

Please send RFQ , we will respond immediately.

Same Series
1N4933G R1G
1N4933G R1G
DIODE GEN PURP 50V 1A DO204AL
1N4936G R1G
1N4936G R1G
DIODE GEN PURP 400V 1A DO204AL
1N4936GHR1G
1N4936GHR1G
DIODE GEN PURP 400V 1A DO204AL
1N4937G R1G
1N4937G R1G
DIODE GEN PURP 600V 1A DO204AL
1N4933G R0G
1N4933G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4933GHR0G
1N4933GHR0G
DIODE GEN PURP 50V 1A DO204AL
1N4934GHR0G
1N4934GHR0G
DIODE GEN PURP 100V 1A DO204AL
1N4933G A0G
1N4933G A0G
DIODE GEN PURP 50V 1A DO204AL
1N4935G A0G
1N4935G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4936G A0G
1N4936G A0G
DIODE GEN PURP 400V 1A DO204AL
1N4936GHA0G
1N4936GHA0G
DIODE GEN PURP 400V 1A DO204AL
1N4937G A0G
1N4937G A0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4937G A0G 1N4937GHA0G 1N4937G B0G 1N4934G A0G 1N4935G A0G 1N4936G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 200 ns 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

1N4004GHR1G
1N4004GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAT54W RVG
BAT54W RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT-323
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B16 L0G
BZV55B16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZX585B5V6 RSG
BZX585B5V6 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 200MW SOD523F
BZX84C22 RFG
BZX84C22 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 22V 300MW SOT23
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZX585B8V2 RKG
BZX585B8V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 200MW SOD523F
BZX55C8V2 A0G
BZX55C8V2 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW DO35
BC857C RFG
BC857C RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC846BW RFG
BC846BW RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT323
BC807-40W RFG
BC807-40W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323