MUR460SHM6G
  • Share:

Taiwan Semiconductor Corporation MUR460SHM6G

Manufacturer No:
MUR460SHM6G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 4A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460SHM6G is a high-performance ultrafast rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed to meet the stringent requirements of modern power electronics, particularly in high-frequency rectification and freewheeling applications. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

ParameterSymbolUnitValue
Maximum Repetitive Peak Reverse VoltageVRRMV600
Working Peak Reverse VoltageVRWMV600
Maximum DC Blocking VoltageVDCV600
Maximum Average Forward Rectified CurrentIF(AV)A4.0
Peak Forward Surge CurrentIFSMA150
Operating Junction and Storage Temperature RangeTJ, TSTG°C-65 to +175
Maximum Instantaneous Forward VoltageVFV1.05 (at 3.0 A, TJ = 150 °C)
Maximum Reverse Recovery Timetrrns50

Key Features

  • Ultrafast Reverse Recovery Time: The MUR460SHM6G features a reverse recovery time of 50 ns, ensuring low switching losses and high efficiency.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 1.05 V at 3.0 A, this diode minimizes power loss.
  • High Forward Surge Capability: It can handle a peak forward surge current of 150 A, making it robust for transient conditions.
  • AEC-Q101 Qualified: Suitable for automotive and other high-reliability applications.
  • Low Profile Package: Ideal for automated placement and space-saving designs.

Applications

The MUR460SHM6G is designed for use in various high-frequency rectification and freewheeling applications, including:

  • Switching mode converters
  • Inverters
  • Consumer electronics
  • Computer systems
  • Telecommunication equipment
  • Automotive power electronics

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MUR460SHM6G?
    The maximum repetitive peak reverse voltage is 600 V.
  2. What is the maximum average forward rectified current of this diode?
    The maximum average forward rectified current is 4.0 A.
  3. What is the reverse recovery time of the MUR460SHM6G?
    The reverse recovery time is 50 ns.
  4. Is the MUR460SHM6G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  5. What is the operating junction and storage temperature range of this diode?
    The operating junction and storage temperature range is -65 to +175 °C.
  6. What is the maximum instantaneous forward voltage of the MUR460SHM6G?
    The maximum instantaneous forward voltage is 1.05 V at 3.0 A and TJ = 150 °C.
  7. What are the typical applications of the MUR460SHM6G?
    Typical applications include high-frequency rectification and freewheeling in switching mode converters, inverters, consumer electronics, computer systems, telecommunication equipment, and automotive power electronics.
  8. What is the peak forward surge current capability of this diode?
    The peak forward surge current capability is 150 A.
  9. Is the MUR460SHM6G suitable for high-reliability environments?
    Yes, it is suitable for high-reliability environments due to its AEC-Q101 qualification.
  10. What package type is the MUR460SHM6G available in?
    The MUR460SHM6G is available in a low-profile package, ideal for automated placement and space-saving designs.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
451

Please send RFQ , we will respond immediately.

Same Series
MUR420S V7G
MUR420S V7G
DIODE GEN PURP 200V 4A DO214AB
MUR440S V7G
MUR440S V7G
DIODE GEN PURP 400V 4A DO214AB
MUR460S V7G
MUR460S V7G
DIODE GEN PURP 600V 4A DO214AB
MUR440S R7G
MUR440S R7G
DIODE GEN PURP 400V 4A DO214AB
MUR460SHR7G
MUR460SHR7G
DIODE GEN PURP 600V 4A DO214AB
MUR420S M6G
MUR420S M6G
DIODE GEN PURP 200V 4A DO214AB
MUR420SHM6G
MUR420SHM6G
DIODE GEN PURP 200V 4A DO214AB
MUR440S M6G
MUR440S M6G
DIODE GEN PURP 400V 4A DO214AB
MUR440SHM6G
MUR440SHM6G
DIODE GEN PURP 400V 4A DO214AB
MUR460S M6G
MUR460S M6G
DIODE GEN PURP 600V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
DIODE GEN PURP 600V 4A DO214AB
MUR440SHR7G
MUR440SHR7G
DIODE GEN PURP 400V 4A DO214AB

Similar Products

Part Number MUR460SHM6G MUR360SHM6G MUR420SHM6G MUR440SHM6G MUR460S M6G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 200 V 400 V 600 V
Current - Average Rectified (Io) 4A 3A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 4 A 1.25 V @ 3 A 1.25 V @ 4 A 1.25 V @ 4 A 1.25 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 25 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz - 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

1.5KE6.8AHA0G
1.5KE6.8AHA0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MUR840 C0G
MUR840 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO220AC
1N4007G B0G
1N4007G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
MUR460HB0G
MUR460HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C18 L0G
BZV55C18 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BZX585B5V1 RSG
BZX585B5V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 200MW SOD523F
BZV55C51 L1G
BZV55C51 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 500MW MINI MELF
BZX84C27 RFG
BZX84C27 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 27V 300MW SOT23
BZV55B4V7 L1G
BZV55B4V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZX79C3V9 A0G
BZX79C3V9 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW DO35