MUR160SH
  • Share:

Taiwan Semiconductor Corporation MUR160SH

Manufacturer No:
MUR160SH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160SH is an ultrafast rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed to offer high-speed switching performance, making it ideal for applications such as switching power supplies, inverters, and free-wheeling diodes. The MUR160SH features fast recovery times of 25, 50, and 75 nanoseconds, a low forward voltage drop, and low leakage current. It operates at an elevated junction temperature of up to 175°C and has a reverse voltage rating of up to 600 volts. The device is constructed with a high-temperature glass passivated junction and a corrosion-resistant epoxy case, ensuring high reliability and robust performance.

Key Specifications

Parameter Value
Part Life Cycle Code Active
Reach Compliance Code Compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Diode Type Rectifier Diode
Forward Voltage-Max (VF) 1.25 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 600 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.075 µs
Package/Case DO-214AA (SMB)
Terminal Form Wire
Lead Temperature for Soldering Purposes 260°C Max. for 10 Seconds

Key Features

  • Ultrafast recovery times of 25, 50, and 75 nanoseconds
  • High operating junction temperature of up to 175°C
  • Low forward voltage drop
  • Low leakage current
  • High-temperature glass passivated junction
  • Reverse voltage rating up to 600 volts
  • Corrosion-resistant epoxy case
  • Readily solderable terminal leads

Applications

The MUR160SH is designed for use in various high-speed switching applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes

Q & A

  1. What is the maximum operating junction temperature of the MUR160SH?

    The maximum operating junction temperature is 175°C.

  2. What are the recovery times of the MUR160SH?

    The recovery times are 25, 50, and 75 nanoseconds.

  3. What is the reverse voltage rating of the MUR160SH?

    The reverse voltage rating is up to 600 volts.

  4. What is the package type of the MUR160SH?

    The package type is DO-214AA (SMB).

  5. What are the typical applications of the MUR160SH?

    Typical applications include switching power supplies, inverters, and free-wheeling diodes.

  6. What is the maximum forward current of the MUR160SH?

    The maximum forward current is 1 A.

  7. Is the MUR160SH RoHS compliant?

    Yes, the MUR160SH is RoHS compliant.

  8. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C Max. for 10 Seconds.

  9. What material is used for the diode element in the MUR160SH?

    The diode element material is silicon.

  10. What is the weight of the MUR160SH?

    The weight is approximately 0.4 grams.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.12
6,959

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MUR160SH MUR110SH MUR120SH MUR140SH MUR160AH MUR160H MUR160S
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 100 V 200 V 400 V 600 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 25 ns 25 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V 150 µA @ 600 V
Capacitance @ Vr, F - - - - 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-204AL (DO-41) DO-204AC (DO-15) DO-214AA (SMB)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

MURF1620CTHC0G
MURF1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V ITO-220AB
1N4001G R0G
1N4001G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
S1MFL RVG
S1MFL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A SOD123FL
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZV55C47 L0G
BZV55C47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55B22 L0G
BZV55B22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZV55B7V5 L0G
BZV55B7V5 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 500MW MINI MELF
BZV55B15 L1G
BZV55B15 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZV55B3V6 L1G
BZV55B3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55C68 L1G
BZV55C68 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF