MUR160SH
  • Share:

Taiwan Semiconductor Corporation MUR160SH

Manufacturer No:
MUR160SH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160SH is an ultrafast rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed to offer high-speed switching performance, making it ideal for applications such as switching power supplies, inverters, and free-wheeling diodes. The MUR160SH features fast recovery times of 25, 50, and 75 nanoseconds, a low forward voltage drop, and low leakage current. It operates at an elevated junction temperature of up to 175°C and has a reverse voltage rating of up to 600 volts. The device is constructed with a high-temperature glass passivated junction and a corrosion-resistant epoxy case, ensuring high reliability and robust performance.

Key Specifications

Parameter Value
Part Life Cycle Code Active
Reach Compliance Code Compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Diode Type Rectifier Diode
Forward Voltage-Max (VF) 1.25 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 600 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.075 µs
Package/Case DO-214AA (SMB)
Terminal Form Wire
Lead Temperature for Soldering Purposes 260°C Max. for 10 Seconds

Key Features

  • Ultrafast recovery times of 25, 50, and 75 nanoseconds
  • High operating junction temperature of up to 175°C
  • Low forward voltage drop
  • Low leakage current
  • High-temperature glass passivated junction
  • Reverse voltage rating up to 600 volts
  • Corrosion-resistant epoxy case
  • Readily solderable terminal leads

Applications

The MUR160SH is designed for use in various high-speed switching applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes

Q & A

  1. What is the maximum operating junction temperature of the MUR160SH?

    The maximum operating junction temperature is 175°C.

  2. What are the recovery times of the MUR160SH?

    The recovery times are 25, 50, and 75 nanoseconds.

  3. What is the reverse voltage rating of the MUR160SH?

    The reverse voltage rating is up to 600 volts.

  4. What is the package type of the MUR160SH?

    The package type is DO-214AA (SMB).

  5. What are the typical applications of the MUR160SH?

    Typical applications include switching power supplies, inverters, and free-wheeling diodes.

  6. What is the maximum forward current of the MUR160SH?

    The maximum forward current is 1 A.

  7. Is the MUR160SH RoHS compliant?

    Yes, the MUR160SH is RoHS compliant.

  8. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C Max. for 10 Seconds.

  9. What material is used for the diode element in the MUR160SH?

    The diode element material is silicon.

  10. What is the weight of the MUR160SH?

    The weight is approximately 0.4 grams.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.12
6,959

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MUR160SH MUR110SH MUR120SH MUR140SH MUR160AH MUR160H MUR160S
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 100 V 200 V 400 V 600 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 25 ns 25 ns 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V 150 µA @ 600 V
Capacitance @ Vr, F - - - - 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-204AL (DO-41) DO-204AC (DO-15) DO-214AA (SMB)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

BAS40-05 RFG
BAS40-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 40V SOT23
MUR460 A0G
MUR460 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N4002GHA0G
1N4002GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZX585B5V6 RSG
BZX585B5V6 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 200MW SOD523F
BZX84C10 RFG
BZX84C10 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 300MW SOT23
BZX84C24 RFG
BZX84C24 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 24V 300MW SOT23
BZV55C36 L1G
BZV55C36 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 36V 500MW MINI MELF
BZX585B6V8 RKG
BZX585B6V8 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BC807-25 RFG
BC807-25 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23
BC857B RFG
BC857B RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23