BAV21W RHG
  • Share:

Taiwan Semiconductor Corporation BAV21W RHG

Manufacturer No:
BAV21W RHG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21W RHG is a general-purpose switching diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for small signal switching applications and is packaged in the SOD-123F case type. It is known for its high reliability and performance in various electronic circuits.

Key Specifications

ParameterValue
ManufacturerTaiwan Semiconductor Corporation
Type of DiodeSwitching Diode
MountingSMD (Surface Mount Device)
Max. Off-State Voltage (Vr)250V
Load Current (Io)0.2A
Reverse Recovery Time (trr)50ns
Semiconductor StructureSingle Diode
Capacitance5pF @ 0V, 1MHz
CaseSOD-123F
Max. Forward Voltage (Vf)1.25V @ 200mA
Max. Forward Impulse Current625mA
Power Dissipation0.41W
Package/Case TypeTape & Reel (TR), Cut Tape (CT), Digi-Reel®

Key Features

  • High voltage and current handling capabilities, making it suitable for a wide range of applications.
  • Low forward voltage drop (Vf) of 1.25V at 200mA, reducing power losses.
  • Fast reverse recovery time of 50ns, ideal for high-frequency switching applications.
  • Compact SOD-123F package, suitable for surface mount technology (SMT) assembly.
  • Low capacitance of 5pF, minimizing parasitic effects in high-speed circuits.

Applications

The BAV21W RHG diode is versatile and can be used in various applications, including:

  • General-purpose switching circuits.
  • High-frequency signal processing.
  • Power supply circuits requiring fast switching times.
  • Automotive and industrial control systems.
  • Consumer electronics where space is limited and high reliability is required.

Q & A

  1. What is the maximum off-state voltage of the BAV21W RHG diode?
    The maximum off-state voltage (Vr) is 250V.
  2. What is the load current rating of the BAV21W RHG diode?
    The load current rating is 0.2A.
  3. What is the reverse recovery time of the BAV21W RHG diode?
    The reverse recovery time (trr) is 50ns.
  4. What is the maximum forward voltage drop of the BAV21W RHG diode?
    The maximum forward voltage drop (Vf) is 1.25V at 200mA.
  5. What is the power dissipation of the BAV21W RHG diode?
    The power dissipation is 0.41W.
  6. What type of package does the BAV21W RHG diode come in?
    The diode comes in the SOD-123F package and is available in tape & reel, cut tape, and Digi-Reel® packaging.
  7. What is the capacitance of the BAV21W RHG diode?
    The capacitance is 5pF at 0V and 1MHz.
  8. What are some common applications of the BAV21W RHG diode?
    Common applications include general-purpose switching circuits, high-frequency signal processing, power supply circuits, automotive and industrial control systems, and consumer electronics.
  9. Is the BAV21W RHG diode suitable for high-frequency applications?
    Yes, it is suitable due to its fast reverse recovery time of 50ns.
  10. What is the maximum forward impulse current of the BAV21W RHG diode?
    The maximum forward impulse current is 625mA.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123F
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.33
1,855

Please send RFQ , we will respond immediately.

Same Series
BAV19W RHG
BAV19W RHG
DIODE GEN PURP 250V 200MA SOD123
BAV20W RHG
BAV20W RHG
DIODE GEN PURP 250V 200MA SOD123

Similar Products

Part Number BAV21W RHG BAV20W RHG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 250 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 250 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F
Supplier Device Package SOD-123F SOD-123F
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

BAT54T REG
BAT54T REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR160SH
MUR160SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR160A B0G
MUR160A B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BZV55B3V6 L0G
BZV55B3V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZX585B5V6 RSG
BZX585B5V6 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 200MW SOD523F
BZV55C16 L1G
BZV55C16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C43 L1G
BZV55C43 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 43V 500MW MINI MELF
BZX55C18 A0G
BZX55C18 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW DO35
BC847AW RFG
BC847AW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323