BAS85 L1G
  • Share:

Taiwan Semiconductor Corporation BAS85 L1G

Manufacturer No:
BAS85 L1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHTKY 30V 200MA MINI MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS85 L1G is a small signal Schottky diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-speed rectification and is suitable for demanding applications where low forward voltage drop is essential. It features a compact MINIMELF-2 package, making it ideal for space-constrained designs.

Key Specifications

Parameter Value Unit
Feature Type Small Signal Schottky Diode
Peak Reverse Repetitive Voltage (V) 30 V
Maximum Continuous Forward Current (A) 0.2 A
Peak Non-Repetitive Surge Current (A) 4 A
Peak Forward Voltage (V) 0.24 @ 30mA, 0.32 @ 100mA, 0.40 @ 200mA V
Reverse Recovery Time (ns) 5 (Typ) ns
Maximum Power Dissipation (mW) 200 mW
Operating Temperature Range (°C) -55 to +125 °C
Package/Case MINIMELF-2, DO-213AC
Mounting Type Surface Mount
Junction Capacitance (pF) 10 @ 1V, 1MHz pF

Key Features

  • Low forward voltage drop, ideal for applications requiring minimal voltage loss.
  • High-speed rectification with a reverse recovery time of 5 ns (Typ).
  • Compact MINIMELF-2 package, suitable for space-constrained designs.
  • Surface mount technology for easy integration into modern PCB designs.
  • Hermetically sealed glass construction for reliability and durability.
  • Corrosion-resistant surfaces and solderable leads.

Applications

  • High-frequency switching circuits where low forward voltage drop is critical.
  • Automotive and industrial applications requiring reliable and efficient rectification.
  • Power supply circuits, especially in DC-DC converters and voltage regulators.
  • Audio and video equipment where minimal signal distortion is necessary.
  • General-purpose rectification in various electronic devices.

Q & A

  1. Q: What is the peak reverse repetitive voltage of the BAS85 L1G?

    A: The peak reverse repetitive voltage of the BAS85 L1G is 30 V.

  2. Q: What is the maximum continuous forward current of the BAS85 L1G?

    A: The maximum continuous forward current of the BAS85 L1G is 0.2 A.

  3. Q: What is the reverse recovery time of the BAS85 L1G?

    A: The reverse recovery time of the BAS85 L1G is 5 ns (Typ).

  4. Q: What is the maximum power dissipation of the BAS85 L1G?

    A: The maximum power dissipation of the BAS85 L1G is 200 mW.

  5. Q: What is the operating temperature range of the BAS85 L1G?

    A: The operating temperature range of the BAS85 L1G is -55°C to +125°C.

  6. Q: What type of package does the BAS85 L1G come in?

    A: The BAS85 L1G comes in a MINIMELF-2 package.

  7. Q: Is the BAS85 L1G suitable for surface mounting?

    A: Yes, the BAS85 L1G is designed for surface mount technology.

  8. Q: What is the junction capacitance of the BAS85 L1G at 1V and 1MHz?

    A: The junction capacitance of the BAS85 L1G at 1V and 1MHz is 10 pF.

  9. Q: What are some common applications of the BAS85 L1G?

    A: The BAS85 L1G is commonly used in high-frequency switching circuits, automotive and industrial applications, power supply circuits, and general-purpose rectification.

  10. Q: How does Taiwan Semiconductor ensure the quality of the BAS85 L1G?

    A: Taiwan Semiconductor ensures the quality of the BAS85 L1G through rigorous testing and verification processes, including sourcing from reliable channels and maintaining high product quality standards.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 30 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

-
312

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS85 L1G BAS85 L0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Obsolete Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 30 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80
Supplier Device Package Mini MELF Mini MELF
Operating Temperature - Junction 125°C (Max) 125°C (Max)

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK

Related Product By Brand

BZW06-15B A0G
BZW06-15B A0G
Taiwan Semiconductor Corporation
TVS DIODE 15.3VWM 32.5VC DO204AC
MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
MUR160S R5G
MUR160S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
BAT54W RVG
BAT54W RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT-323
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZX585B3V0 RSG
BZX585B3V0 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 200MW SOD523F
BZV55B3V6 L1G
BZV55B3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55C39 L1G
BZV55C39 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 39V 500MW MINI MELF
BZV55C8V2 L1G
BZV55C8V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW MINI MELF
BZX585B8V2 RKG
BZX585B8V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 200MW SOD523F
BZX79C20 A0G
BZX79C20 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW DO35