Overview
The BAS85 L1G is a small signal Schottky diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-speed rectification and is suitable for demanding applications where low forward voltage drop is essential. It features a compact MINIMELF-2 package, making it ideal for space-constrained designs.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Feature Type | Small Signal Schottky Diode | |
Peak Reverse Repetitive Voltage (V) | 30 | V |
Maximum Continuous Forward Current (A) | 0.2 | A |
Peak Non-Repetitive Surge Current (A) | 4 | A |
Peak Forward Voltage (V) | 0.24 @ 30mA, 0.32 @ 100mA, 0.40 @ 200mA | V |
Reverse Recovery Time (ns) | 5 (Typ) | ns |
Maximum Power Dissipation (mW) | 200 | mW |
Operating Temperature Range (°C) | -55 to +125 | °C |
Package/Case | MINIMELF-2, DO-213AC | |
Mounting Type | Surface Mount | |
Junction Capacitance (pF) | 10 @ 1V, 1MHz | pF |
Key Features
- Low forward voltage drop, ideal for applications requiring minimal voltage loss.
- High-speed rectification with a reverse recovery time of 5 ns (Typ).
- Compact MINIMELF-2 package, suitable for space-constrained designs.
- Surface mount technology for easy integration into modern PCB designs.
- Hermetically sealed glass construction for reliability and durability.
- Corrosion-resistant surfaces and solderable leads.
Applications
- High-frequency switching circuits where low forward voltage drop is critical.
- Automotive and industrial applications requiring reliable and efficient rectification.
- Power supply circuits, especially in DC-DC converters and voltage regulators.
- Audio and video equipment where minimal signal distortion is necessary.
- General-purpose rectification in various electronic devices.
Q & A
- Q: What is the peak reverse repetitive voltage of the BAS85 L1G?
A: The peak reverse repetitive voltage of the BAS85 L1G is 30 V.
- Q: What is the maximum continuous forward current of the BAS85 L1G?
A: The maximum continuous forward current of the BAS85 L1G is 0.2 A.
- Q: What is the reverse recovery time of the BAS85 L1G?
A: The reverse recovery time of the BAS85 L1G is 5 ns (Typ).
- Q: What is the maximum power dissipation of the BAS85 L1G?
A: The maximum power dissipation of the BAS85 L1G is 200 mW.
- Q: What is the operating temperature range of the BAS85 L1G?
A: The operating temperature range of the BAS85 L1G is -55°C to +125°C.
- Q: What type of package does the BAS85 L1G come in?
A: The BAS85 L1G comes in a MINIMELF-2 package.
- Q: Is the BAS85 L1G suitable for surface mounting?
A: Yes, the BAS85 L1G is designed for surface mount technology.
- Q: What is the junction capacitance of the BAS85 L1G at 1V and 1MHz?
A: The junction capacitance of the BAS85 L1G at 1V and 1MHz is 10 pF.
- Q: What are some common applications of the BAS85 L1G?
A: The BAS85 L1G is commonly used in high-frequency switching circuits, automotive and industrial applications, power supply circuits, and general-purpose rectification.
- Q: How does Taiwan Semiconductor ensure the quality of the BAS85 L1G?
A: Taiwan Semiconductor ensures the quality of the BAS85 L1G through rigorous testing and verification processes, including sourcing from reliable channels and maintaining high product quality standards.