BAS85 L1G
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Taiwan Semiconductor Corporation BAS85 L1G

Manufacturer No:
BAS85 L1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHTKY 30V 200MA MINI MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BAS85 L1G is a small signal Schottky diode produced by Taiwan Semiconductor Corporation. This diode is designed for high-speed rectification and is suitable for demanding applications where low forward voltage drop is essential. It features a compact MINIMELF-2 package, making it ideal for space-constrained designs.

Key Specifications

Parameter Value Unit
Feature Type Small Signal Schottky Diode
Peak Reverse Repetitive Voltage (V) 30 V
Maximum Continuous Forward Current (A) 0.2 A
Peak Non-Repetitive Surge Current (A) 4 A
Peak Forward Voltage (V) 0.24 @ 30mA, 0.32 @ 100mA, 0.40 @ 200mA V
Reverse Recovery Time (ns) 5 (Typ) ns
Maximum Power Dissipation (mW) 200 mW
Operating Temperature Range (°C) -55 to +125 °C
Package/Case MINIMELF-2, DO-213AC
Mounting Type Surface Mount
Junction Capacitance (pF) 10 @ 1V, 1MHz pF

Key Features

  • Low forward voltage drop, ideal for applications requiring minimal voltage loss.
  • High-speed rectification with a reverse recovery time of 5 ns (Typ).
  • Compact MINIMELF-2 package, suitable for space-constrained designs.
  • Surface mount technology for easy integration into modern PCB designs.
  • Hermetically sealed glass construction for reliability and durability.
  • Corrosion-resistant surfaces and solderable leads.

Applications

  • High-frequency switching circuits where low forward voltage drop is critical.
  • Automotive and industrial applications requiring reliable and efficient rectification.
  • Power supply circuits, especially in DC-DC converters and voltage regulators.
  • Audio and video equipment where minimal signal distortion is necessary.
  • General-purpose rectification in various electronic devices.

Q & A

  1. Q: What is the peak reverse repetitive voltage of the BAS85 L1G?

    A: The peak reverse repetitive voltage of the BAS85 L1G is 30 V.

  2. Q: What is the maximum continuous forward current of the BAS85 L1G?

    A: The maximum continuous forward current of the BAS85 L1G is 0.2 A.

  3. Q: What is the reverse recovery time of the BAS85 L1G?

    A: The reverse recovery time of the BAS85 L1G is 5 ns (Typ).

  4. Q: What is the maximum power dissipation of the BAS85 L1G?

    A: The maximum power dissipation of the BAS85 L1G is 200 mW.

  5. Q: What is the operating temperature range of the BAS85 L1G?

    A: The operating temperature range of the BAS85 L1G is -55°C to +125°C.

  6. Q: What type of package does the BAS85 L1G come in?

    A: The BAS85 L1G comes in a MINIMELF-2 package.

  7. Q: Is the BAS85 L1G suitable for surface mounting?

    A: Yes, the BAS85 L1G is designed for surface mount technology.

  8. Q: What is the junction capacitance of the BAS85 L1G at 1V and 1MHz?

    A: The junction capacitance of the BAS85 L1G at 1V and 1MHz is 10 pF.

  9. Q: What are some common applications of the BAS85 L1G?

    A: The BAS85 L1G is commonly used in high-frequency switching circuits, automotive and industrial applications, power supply circuits, and general-purpose rectification.

  10. Q: How does Taiwan Semiconductor ensure the quality of the BAS85 L1G?

    A: Taiwan Semiconductor ensures the quality of the BAS85 L1G through rigorous testing and verification processes, including sourcing from reliable channels and maintaining high product quality standards.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 30 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:125°C (Max)
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Similar Products

Part Number BAS85 L1G BAS85 L0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Obsolete Obsolete
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 30 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80
Supplier Device Package Mini MELF Mini MELF
Operating Temperature - Junction 125°C (Max) 125°C (Max)

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