MUR160 B0G
  • Share:

Taiwan Semiconductor Corporation MUR160 B0G

Manufacturer No:
MUR160 B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 1A DO204AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160 B0G is a general-purpose diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for a wide range of applications requiring reliable and efficient rectification. It features a maximum DC reverse voltage of 600V and an average rectified current of 1A, making it suitable for various power supply and rectifier circuits.

The MUR160 B0G is packaged in a DO-204AC (DO-15) axial case, which is lead-free and RoHS compliant. This ensures environmental sustainability and compliance with international regulations. The diode also boasts fast recovery characteristics, with a reverse recovery time of 50ns, enhancing its performance in high-frequency applications.

Key Specifications

Parameter Value
Manufacturer Taiwan Semiconductor Corporation
Description DIODE GEN PURP 600V 1A DO204AC
Category Discrete Semiconductor Products
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Voltage - Forward (Vf) (Max) @ If 1.25V @ 1A
Voltage - DC Reverse (Vr) (Max) 600V
Supplier Device Package DO-204AC (DO-15), Axial
Reverse Recovery Time (trr) 50ns
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 5µA @ 600V
Current - Average Rectified (Io) 1A
Capacitance @ Vr, F 27pF @ 4V, 1MHz

Key Features

  • High Voltage Rating: Maximum DC reverse voltage of 600V, suitable for high-voltage applications.
  • Fast Recovery: Reverse recovery time of 50ns, enhancing performance in high-frequency circuits.
  • High Current Capability: Average rectified current of 1A, making it suitable for power supply and rectifier circuits.
  • Environmental Compliance: Lead-free and RoHS compliant, ensuring sustainability and regulatory compliance.
  • Wide Operating Temperature Range: Junction temperature range from -55°C to 175°C, suitable for various environmental conditions.
  • Through-Hole Mounting: Easy to integrate into existing PCB designs with through-hole mounting.

Applications

  • Power Supplies: Suitable for use in power supply units requiring high voltage and current rectification.
  • Rectifier Circuits: Ideal for bridge rectifiers, half-wave rectifiers, and other rectification applications.
  • Industrial Control Systems: Used in control systems that require reliable and efficient rectification.
  • Automotive Systems: Applicable in automotive electronics where high voltage and current handling are necessary.
  • Consumer Electronics: Used in various consumer electronic devices requiring efficient power management.

Q & A

  1. What is the maximum DC reverse voltage of the MUR160 B0G diode?

    The maximum DC reverse voltage of the MUR160 B0G diode is 600V.

  2. What is the average rectified current (Io) of the MUR160 B0G diode?

    The average rectified current (Io) of the MUR160 B0G diode is 1A.

  3. What is the reverse recovery time (trr) of the MUR160 B0G diode?

    The reverse recovery time (trr) of the MUR160 B0G diode is 50ns.

  4. What is the operating temperature range of the MUR160 B0G diode?

    The operating temperature range of the MUR160 B0G diode is from -55°C to 175°C.

  5. Is the MUR160 B0G diode lead-free and RoHS compliant?
  6. What is the packaging type of the MUR160 B0G diode?

    The MUR160 B0G diode is packaged in a DO-204AC (DO-15) axial case.

  7. What is the forward voltage drop (Vf) of the MUR160 B0G diode at 1A?

    The forward voltage drop (Vf) of the MUR160 B0G diode at 1A is 1.25V.

  8. What is the moisture sensitivity level (MSL) of the MUR160 B0G diode?

    The moisture sensitivity level (MSL) of the MUR160 B0G diode is 1 (Unlimited).

  9. What is the typical capacitance of the MUR160 B0G diode at 4V and 1MHz?

    The typical capacitance of the MUR160 B0G diode at 4V and 1MHz is 27pF.

  10. In what types of applications is the MUR160 B0G diode commonly used?

    The MUR160 B0G diode is commonly used in power supplies, rectifier circuits, industrial control systems, automotive systems, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AC, DO-15, Axial
Supplier Device Package:DO-204AC (DO-15)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
528

Please send RFQ , we will respond immediately.

Same Series
MUR190A A0G
MUR190A A0G
DIODE GEN PURP 900V 1A DO204AL
MUR190A R1G
MUR190A R1G
DIODE GEN PURP 900V 1A DO204AL
MUR190AHR1G
MUR190AHR1G
DIODE GEN PURP 900V 1A DO204AL
MUR190A R0G
MUR190A R0G
DIODE GEN PURP 900V 1A DO204AL
MUR190AHR0G
MUR190AHR0G
DIODE GEN PURP 900V 1A DO204AL
MUR190AHA0G
MUR190AHA0G
DIODE GEN PURP 900V 1A DO204AL
MUR160HA0G
MUR160HA0G
DIODE GEN PURP 600V 1A DO204AC
MUR190 A0G
MUR190 A0G
DIODE GEN PURP 900V 1A DO204AC
MUR190 B0G
MUR190 B0G
DIODE GEN PURP 900V 1A DO204AC
MUR190A B0G
MUR190A B0G
DIODE GEN PURP 900V 1A DO204AL
MUR190AHB0G
MUR190AHB0G
DIODE GEN PURP 900V 1A DO204AL
MUR190HB0G
MUR190HB0G
DIODE GEN PURP 900V 1A DO204AC

Similar Products

Part Number MUR160 B0G MUR160A B0G MUR160HB0G MUR190 B0G MUR160 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 900 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 75 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial
Supplier Device Package DO-204AC (DO-15) DO-204AL (DO-41) DO-204AC (DO-15) DO-204AC (DO-15) DO-204AC (DO-15)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15

Related Product By Brand

1.5KE120A B0G
1.5KE120A B0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
S1MFL RVG
S1MFL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A SOD123FL
1N5821 A0G
1N5821 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MBR10100 C0G
MBR10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
BAT43X-M0 RS
BAT43X-M0 RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55C47 L0G
BZV55C47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55B47 L0G
BZV55B47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55B68 L0G
BZV55B68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55B22 L1G
BZV55B22 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZX55C5V6 A0G
BZX55C5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BSS123W
BSS123W
Taiwan Semiconductor Corporation
100V, 0.16A, SINGLE N-CHANNEL PO