MUR160 B0G
  • Share:

Taiwan Semiconductor Corporation MUR160 B0G

Manufacturer No:
MUR160 B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 1A DO204AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160 B0G is a general-purpose diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for a wide range of applications requiring reliable and efficient rectification. It features a maximum DC reverse voltage of 600V and an average rectified current of 1A, making it suitable for various power supply and rectifier circuits.

The MUR160 B0G is packaged in a DO-204AC (DO-15) axial case, which is lead-free and RoHS compliant. This ensures environmental sustainability and compliance with international regulations. The diode also boasts fast recovery characteristics, with a reverse recovery time of 50ns, enhancing its performance in high-frequency applications.

Key Specifications

Parameter Value
Manufacturer Taiwan Semiconductor Corporation
Description DIODE GEN PURP 600V 1A DO204AC
Category Discrete Semiconductor Products
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Voltage - Forward (Vf) (Max) @ If 1.25V @ 1A
Voltage - DC Reverse (Vr) (Max) 600V
Supplier Device Package DO-204AC (DO-15), Axial
Reverse Recovery Time (trr) 50ns
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Reverse Leakage @ Vr 5µA @ 600V
Current - Average Rectified (Io) 1A
Capacitance @ Vr, F 27pF @ 4V, 1MHz

Key Features

  • High Voltage Rating: Maximum DC reverse voltage of 600V, suitable for high-voltage applications.
  • Fast Recovery: Reverse recovery time of 50ns, enhancing performance in high-frequency circuits.
  • High Current Capability: Average rectified current of 1A, making it suitable for power supply and rectifier circuits.
  • Environmental Compliance: Lead-free and RoHS compliant, ensuring sustainability and regulatory compliance.
  • Wide Operating Temperature Range: Junction temperature range from -55°C to 175°C, suitable for various environmental conditions.
  • Through-Hole Mounting: Easy to integrate into existing PCB designs with through-hole mounting.

Applications

  • Power Supplies: Suitable for use in power supply units requiring high voltage and current rectification.
  • Rectifier Circuits: Ideal for bridge rectifiers, half-wave rectifiers, and other rectification applications.
  • Industrial Control Systems: Used in control systems that require reliable and efficient rectification.
  • Automotive Systems: Applicable in automotive electronics where high voltage and current handling are necessary.
  • Consumer Electronics: Used in various consumer electronic devices requiring efficient power management.

Q & A

  1. What is the maximum DC reverse voltage of the MUR160 B0G diode?

    The maximum DC reverse voltage of the MUR160 B0G diode is 600V.

  2. What is the average rectified current (Io) of the MUR160 B0G diode?

    The average rectified current (Io) of the MUR160 B0G diode is 1A.

  3. What is the reverse recovery time (trr) of the MUR160 B0G diode?

    The reverse recovery time (trr) of the MUR160 B0G diode is 50ns.

  4. What is the operating temperature range of the MUR160 B0G diode?

    The operating temperature range of the MUR160 B0G diode is from -55°C to 175°C.

  5. Is the MUR160 B0G diode lead-free and RoHS compliant?
  6. What is the packaging type of the MUR160 B0G diode?

    The MUR160 B0G diode is packaged in a DO-204AC (DO-15) axial case.

  7. What is the forward voltage drop (Vf) of the MUR160 B0G diode at 1A?

    The forward voltage drop (Vf) of the MUR160 B0G diode at 1A is 1.25V.

  8. What is the moisture sensitivity level (MSL) of the MUR160 B0G diode?

    The moisture sensitivity level (MSL) of the MUR160 B0G diode is 1 (Unlimited).

  9. What is the typical capacitance of the MUR160 B0G diode at 4V and 1MHz?

    The typical capacitance of the MUR160 B0G diode at 4V and 1MHz is 27pF.

  10. In what types of applications is the MUR160 B0G diode commonly used?

    The MUR160 B0G diode is commonly used in power supplies, rectifier circuits, industrial control systems, automotive systems, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AC, DO-15, Axial
Supplier Device Package:DO-204AC (DO-15)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
528

Please send RFQ , we will respond immediately.

Same Series
MUR190A A0G
MUR190A A0G
DIODE GEN PURP 900V 1A DO204AL
MUR190A R1G
MUR190A R1G
DIODE GEN PURP 900V 1A DO204AL
MUR190AHR1G
MUR190AHR1G
DIODE GEN PURP 900V 1A DO204AL
MUR190AHR0G
MUR190AHR0G
DIODE GEN PURP 900V 1A DO204AL
MUR160 A0G
MUR160 A0G
DIODE GEN PURP 600V 1A DO204AC
MUR190 A0G
MUR190 A0G
DIODE GEN PURP 900V 1A DO204AC
MUR190HA0G
MUR190HA0G
DIODE GEN PURP 900V 1A DO204AC
MUR160 B0G
MUR160 B0G
DIODE GEN PURP 600V 1A DO204AC
MUR190 B0G
MUR190 B0G
DIODE GEN PURP 900V 1A DO204AC
MUR190A B0G
MUR190A B0G
DIODE GEN PURP 900V 1A DO204AL
MUR190AHB0G
MUR190AHB0G
DIODE GEN PURP 900V 1A DO204AL
MUR190HB0G
MUR190HB0G
DIODE GEN PURP 900V 1A DO204AC

Similar Products

Part Number MUR160 B0G MUR160A B0G MUR160HB0G MUR190 B0G MUR160 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 900 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 75 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial
Supplier Device Package DO-204AC (DO-15) DO-204AL (DO-41) DO-204AC (DO-15) DO-204AC (DO-15) DO-204AC (DO-15)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

BAS40-05 RFG
BAS40-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-06 RFG
BAS40-06 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 40V SOT23
MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
MUR420 B0G
MUR420 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BAT43X RS
BAT43X RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55C16 L0G
BZV55C16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZX585B9V1 RSG
BZX585B9V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F
BZV55B13 L1G
BZV55B13 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZV55C24 L1G
BZV55C24 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 24V 500MW MINI MELF
BZV55C43 L1G
BZV55C43 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 43V 500MW MINI MELF
BZX55C3V3 A0G
BZX55C3V3 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW DO35
BC847A RFG
BC847A RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23