MUR160HB0G
  • Share:

Taiwan Semiconductor Corporation MUR160HB0G

Manufacturer No:
MUR160HB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 1A DO204AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160HB0G diode, manufactured by Taiwan Semiconductor Corporation, is a high-efficiency, fast recovery rectifier diode designed for various electrical and electronic applications. This diode is part of the automotive series and complies with the AEC-Q101 qualification standard, ensuring its reliability and performance in demanding environments.

With its robust specifications and compact design, the MUR160HB0G is suitable for use in power supply systems, motor control circuits, and other applications requiring efficient rectification and fast recovery times.

Key Specifications

Specification Value
Repetitive Reverse Voltage (Vrrm) Max 600V
Forward Current (If(AV)) 1A
Diode Configuration Single
Forward Voltage (VF) Max 1.35V
Reverse Recovery Time (trr) Max 60ns
Forward Surge Current (Ifsm) Max 35A
Operating Temperature Max 175°C
Diode Case Style DO-204AC
No. of Pins 2 Pins
Packaging Each
Automotive Qualification Standard AEC-Q101
Junction Temperature (Tj) Max 175°C
Junction Temperature (Tj) Min -65°C
Junction to Case Thermal Resistance 50°C/W
Operating Temperature Range -65°C to +175°C
Reverse Recovery Time (trr) Typ 50ns
Termination Type Axial Leaded

Key Features

  • High Efficiency: The MUR160HB0G features a low forward voltage drop, making it highly efficient in rectification applications.
  • Fast Recovery Time: With a typical reverse recovery time of 50ns, this diode is ideal for high-frequency applications.
  • High Surge Current Capability: It can handle a forward surge current of up to 35A, ensuring robust performance under transient conditions.
  • Wide Operating Temperature Range: The diode operates reliably from -65°C to +175°C, making it suitable for a variety of environmental conditions.
  • Automotive Qualification: Compliant with the AEC-Q101 standard, ensuring reliability and performance in automotive applications.
  • Compact Design: The DO-204AC package is compact and suitable for space-constrained designs.

Applications

  • Power Supply Systems: Used in rectifier circuits for converting AC to DC in power supplies.
  • Motor Control Circuits: Employed in motor control systems to manage the flow of electrical current efficiently.
  • Automotive Systems: Suitable for various automotive applications due to its compliance with the AEC-Q101 standard.
  • Switch Mode Power Supplies (SMPS): Ideal for use in SMPS due to its fast recovery time and high efficiency.
  • Industrial Control Systems: Used in industrial control circuits where high reliability and efficiency are required.

Q & A

  1. What is the maximum repetitive reverse voltage of the MUR160HB0G diode?

    The maximum repetitive reverse voltage is 600V.

  2. What is the forward current rating of the MUR160HB0G diode?

    The forward current rating is 1A.

  3. What is the typical reverse recovery time of the MUR160HB0G diode?

    The typical reverse recovery time is 50ns.

  4. What is the operating temperature range of the MUR160HB0G diode?

    The operating temperature range is from -65°C to +175°C.

  5. Is the MUR160HB0G diode automotive qualified?

    Yes, it is compliant with the AEC-Q101 standard.

  6. What is the package type of the MUR160HB0G diode?

    The package type is DO-204AC with axial leaded termination.

  7. What is the maximum forward surge current of the MUR160HB0G diode?

    The maximum forward surge current is 35A.

  8. What is the junction to case thermal resistance of the MUR160HB0G diode?

    The junction to case thermal resistance is 50°C/W.

  9. Is the MUR160HB0G diode RoHS compliant?

    Yes, it is RoHS compliant.

  10. What are some common applications of the MUR160HB0G diode?

    Common applications include power supply systems, motor control circuits, automotive systems, switch mode power supplies, and industrial control systems.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AC, DO-15, Axial
Supplier Device Package:DO-204AC (DO-15)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
63

Please send RFQ , we will respond immediately.

Same Series
MUR190A A0G
MUR190A A0G
DIODE GEN PURP 900V 1A DO204AL
MUR190A R1G
MUR190A R1G
DIODE GEN PURP 900V 1A DO204AL
MUR190AHR1G
MUR190AHR1G
DIODE GEN PURP 900V 1A DO204AL
MUR190A R0G
MUR190A R0G
DIODE GEN PURP 900V 1A DO204AL
MUR160 A0G
MUR160 A0G
DIODE GEN PURP 600V 1A DO204AC
MUR160HA0G
MUR160HA0G
DIODE GEN PURP 600V 1A DO204AC
MUR190 A0G
MUR190 A0G
DIODE GEN PURP 900V 1A DO204AC
MUR160 B0G
MUR160 B0G
DIODE GEN PURP 600V 1A DO204AC
MUR190 B0G
MUR190 B0G
DIODE GEN PURP 900V 1A DO204AC
MUR190A B0G
MUR190A B0G
DIODE GEN PURP 900V 1A DO204AL
MUR190AHB0G
MUR190AHB0G
DIODE GEN PURP 900V 1A DO204AL
MUR190HB0G
MUR190HB0G
DIODE GEN PURP 900V 1A DO204AC

Similar Products

Part Number MUR160HB0G MUR190HB0G MUR160 B0G MUR160AHB0G MUR160HA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 900 V 600 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 75 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial
Supplier Device Package DO-204AC (DO-15) DO-204AC (DO-15) DO-204AC (DO-15) DO-204AL (DO-41) DO-204AC (DO-15)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA

Related Product By Brand

BAT54S RFG
BAT54S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT23
BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR420SHM6G
MUR420SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR160HB0G
MUR160HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZX585B9V1 RSG
BZX585B9V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 200MW SOD523F
BZX84C22 RFG
BZX84C22 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 22V 300MW SOT23
BZV55C39 L1G
BZV55C39 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 39V 500MW MINI MELF
BZX79B5V6 A0G
BZX79B5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BC847AW RFG
BC847AW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323