BAT42W RHG
  • Share:

Taiwan Semiconductor Corporation BAT42W RHG

Manufacturer No:
BAT42W RHG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT42W RHG is a surface mount, switching Schottky barrier diode produced by Taiwan Semiconductor Corporation. This diode is designed for low power loss and high efficiency, making it suitable for a variety of applications requiring high-temperature stability and reliability. It is AEC-Q101 qualified and RoHS compliant, ensuring it meets stringent automotive and environmental standards.

Key Specifications

ParameterValueUnit
Maximum Peak Recurrent Reverse Voltage (VRRM)30V
Maximum Average Rectified Current (Io)200mA
Maximum Forward Voltage (Vf) @ If=200mA0.65V
Reverse Recovery Time (trr)5ns
Reverse Leakage Current @ Vr=25V500nA
Junction Capacitance @ Vr=1V, f=1MHz10pF
Operating Temperature Range-55 to +125°C
Storage Temperature Range-55 to +125°C
PackageSOD-123
Moisture Sensitivity Level (MSL)1

Key Features

  • Low forward voltage drop and high efficiency, reducing power loss in applications.
  • Surface mount device in SOD-123 package, suitable for compact designs.
  • AEC-Q101 qualified and RoHS compliant, ensuring reliability in automotive and environmentally sensitive applications.
  • Halogen-free according to IEC 61249-2-21 and lead-free, aligning with modern environmental standards.
  • High temperature stability with an operating temperature range of -55°C to +125°C.
  • High forward surge capability and non-repetitive peak forward surge current of up to 625 mA.

Applications

The BAT42W RHG Schottky diode is versatile and can be used in various applications, including:

  • Automotive systems due to its AEC-Q101 qualification.
  • Power supply circuits where low forward voltage drop and high efficiency are crucial.
  • Switching and rectification applications requiring high speed and reliability.
  • General-purpose electronic circuits where high-temperature stability is necessary.

Q & A

  1. What is the maximum peak recurrent reverse voltage of the BAT42W RHG?
    The maximum peak recurrent reverse voltage (VRRM) is 30 V.
  2. What is the maximum average rectified current (Io) of the BAT42W RHG?
    The maximum average rectified current (Io) is 200 mA.
  3. What is the maximum forward voltage (Vf) at 200 mA for the BAT42W RHG?
    The maximum forward voltage (Vf) at 200 mA is 0.65 V.
  4. What is the reverse recovery time (trr) of the BAT42W RHG?
    The reverse recovery time (trr) is 5 ns.
  5. What is the junction capacitance of the BAT42W RHG at Vr=1V and f=1MHz?
    The junction capacitance is 10 pF at Vr=1V and f=1MHz.
  6. What is the operating temperature range of the BAT42W RHG?
    The operating temperature range is -55°C to +125°C.
  7. Is the BAT42W RHG RoHS compliant?
    Yes, the BAT42W RHG is RoHS compliant.
  8. What package type does the BAT42W RHG come in?
    The BAT42W RHG comes in a SOD-123 package.
  9. What is the moisture sensitivity level (MSL) of the BAT42W RHG?
    The moisture sensitivity level (MSL) is 1.
  10. Is the BAT42W RHG suitable for automotive applications?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.37
1,139

Please send RFQ , we will respond immediately.

Same Series
BAT43W RHG
BAT43W RHG
DIODE SCHOTTKY 30V 200MA SOD123

Similar Products

Part Number BAT42W RHG BAT43W RHG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 200 mA 650 mV @ 50 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns
Current - Reverse Leakage @ Vr 500 nA @ 25 V 500 nA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
BAS20W RVG
BAS20W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOT323
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT43X-M0 RS
BAT43X-M0 RS
Taiwan Semiconductor Corporation
DIODE SCHOTTKY SOD-523F
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZX84C12 RFG
BZX84C12 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 12V 300MW SOT23
BZX84C2V7 RFG
BZX84C2V7 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 300MW SOT23
BZV55B30 L1G
BZV55B30 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZX585B3V0 RKG
BZX585B3V0 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 200MW SOD523F
BSS84W
BSS84W
Taiwan Semiconductor Corporation
-60, -0.14, SINGLE P-CHANNEL