BAT43W RHG
  • Share:

Taiwan Semiconductor Corporation BAT43W RHG

Manufacturer No:
BAT43W RHG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT43W RHG is a surface mount, switching Schottky barrier diode produced by Taiwan Semiconductor Corporation. This diode is part of the BAT4xW series and is known for its low forward voltage drop and high efficiency. It is packaged in a SOD-123 small outline plastic package, making it suitable for a variety of applications where space is limited. The BAT43W RHG is RoHS compliant and features high-temperature stability, making it a reliable choice for various electronic circuits.

Key Specifications

Parameter Unit BAT43W
Maximum Reverse Voltage (VRRM) V 30
Maximum Forward Current (IF) mA 200
Forward Voltage Drop (VF) at IF=200mA mV 450
Reverse Leakage Current (IR) at VR=25V nA 100
Peak Reverse Current (IRRM) mA 625
Reverse Recovery Time (trr) ns 10
Junction to Ambient Thermal Resistance (RθJA) °C/W 200
Operating Temperature Range °C -55 to +125
Storage Temperature Range °C -55 to +125
Package Type SOD-123

Key Features

  • Low forward voltage drop, typically 0.45V at IF=200mA
  • High efficiency and low power loss
  • Surface mount device in SOD-123 package
  • RoHS compliant and halogen-free according to IEC 61249-2-21
  • High-temperature stability and high forward surge capability
  • AEC-Q101 qualified for automotive applications
  • Moisture sensitivity level (MSL): 1

Applications

  • General-purpose switching and rectification in electronic circuits
  • Automotive systems due to AEC-Q101 qualification
  • High-frequency applications where low forward voltage drop is crucial
  • Power supply circuits requiring high efficiency and low power loss
  • Consumer electronics and industrial control systems

Q & A

  1. What is the maximum reverse voltage of the BAT43W RHG diode?

    The maximum reverse voltage (VRRM) of the BAT43W RHG diode is 30V.

  2. What is the typical forward voltage drop of the BAT43W RHG at 200mA?

    The typical forward voltage drop (VF) at IF=200mA is 0.45V.

  3. What is the package type of the BAT43W RHG diode?

    The BAT43W RHG diode is packaged in a SOD-123 small outline plastic package.

  4. Is the BAT43W RHG diode RoHS compliant?
  5. What is the operating temperature range of the BAT43W RHG diode?

    The operating temperature range of the BAT43W RHG diode is -55°C to +125°C).

  6. What is the reverse recovery time of the BAT43W RHG diode?

    The reverse recovery time (trr) of the BAT43W RHG diode is typically 10ns).

  7. Is the BAT43W RHG diode suitable for automotive applications?
  8. What is the maximum forward current of the BAT43W RHG diode?

    The maximum forward current (IF) of the BAT43W RHG diode is 200mA).

  9. What is the junction to ambient thermal resistance of the BAT43W RHG diode?

    The junction to ambient thermal resistance (RθJA) of the BAT43W RHG diode is 200°C/W).

  10. Is the BAT43W RHG diode moisture sensitive?

    The BAT43W RHG diode has a moisture sensitivity level (MSL) of 1).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:650 mV @ 50 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.06
12,154

Please send RFQ , we will respond immediately.

Same Series
BAT43W RHG
BAT43W RHG
DIODE SCHOTTKY 30V 200MA SOD123

Similar Products

Part Number BAT43W RHG BAT42W RHG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 650 mV @ 50 mA 1 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns
Current - Reverse Leakage @ Vr 500 nA @ 25 V 500 nA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

BAS70-06 RFG
BAS70-06 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
MUR160S R5G
MUR160S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR460S V7G
MUR460S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MUR420SHM6G
MUR420SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
BZV55C51 L1G
BZV55C51 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 500MW MINI MELF
ZM4742A L0G
ZM4742A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 1W MELF
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZX55C10 A0G
BZX55C10 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW DO35
BC848B RFG
BC848B RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT23
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BSS84W
BSS84W
Taiwan Semiconductor Corporation
-60, -0.14, SINGLE P-CHANNEL