BAT43W RHG
  • Share:

Taiwan Semiconductor Corporation BAT43W RHG

Manufacturer No:
BAT43W RHG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT43W RHG is a surface mount, switching Schottky barrier diode produced by Taiwan Semiconductor Corporation. This diode is part of the BAT4xW series and is known for its low forward voltage drop and high efficiency. It is packaged in a SOD-123 small outline plastic package, making it suitable for a variety of applications where space is limited. The BAT43W RHG is RoHS compliant and features high-temperature stability, making it a reliable choice for various electronic circuits.

Key Specifications

Parameter Unit BAT43W
Maximum Reverse Voltage (VRRM) V 30
Maximum Forward Current (IF) mA 200
Forward Voltage Drop (VF) at IF=200mA mV 450
Reverse Leakage Current (IR) at VR=25V nA 100
Peak Reverse Current (IRRM) mA 625
Reverse Recovery Time (trr) ns 10
Junction to Ambient Thermal Resistance (RθJA) °C/W 200
Operating Temperature Range °C -55 to +125
Storage Temperature Range °C -55 to +125
Package Type SOD-123

Key Features

  • Low forward voltage drop, typically 0.45V at IF=200mA
  • High efficiency and low power loss
  • Surface mount device in SOD-123 package
  • RoHS compliant and halogen-free according to IEC 61249-2-21
  • High-temperature stability and high forward surge capability
  • AEC-Q101 qualified for automotive applications
  • Moisture sensitivity level (MSL): 1

Applications

  • General-purpose switching and rectification in electronic circuits
  • Automotive systems due to AEC-Q101 qualification
  • High-frequency applications where low forward voltage drop is crucial
  • Power supply circuits requiring high efficiency and low power loss
  • Consumer electronics and industrial control systems

Q & A

  1. What is the maximum reverse voltage of the BAT43W RHG diode?

    The maximum reverse voltage (VRRM) of the BAT43W RHG diode is 30V.

  2. What is the typical forward voltage drop of the BAT43W RHG at 200mA?

    The typical forward voltage drop (VF) at IF=200mA is 0.45V.

  3. What is the package type of the BAT43W RHG diode?

    The BAT43W RHG diode is packaged in a SOD-123 small outline plastic package.

  4. Is the BAT43W RHG diode RoHS compliant?
  5. What is the operating temperature range of the BAT43W RHG diode?

    The operating temperature range of the BAT43W RHG diode is -55°C to +125°C).

  6. What is the reverse recovery time of the BAT43W RHG diode?

    The reverse recovery time (trr) of the BAT43W RHG diode is typically 10ns).

  7. Is the BAT43W RHG diode suitable for automotive applications?
  8. What is the maximum forward current of the BAT43W RHG diode?

    The maximum forward current (IF) of the BAT43W RHG diode is 200mA).

  9. What is the junction to ambient thermal resistance of the BAT43W RHG diode?

    The junction to ambient thermal resistance (RθJA) of the BAT43W RHG diode is 200°C/W).

  10. Is the BAT43W RHG diode moisture sensitive?

    The BAT43W RHG diode has a moisture sensitivity level (MSL) of 1).

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:650 mV @ 50 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:500 nA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

$0.06
12,154

Please send RFQ , we will respond immediately.

Same Series
BAT43W RHG
BAT43W RHG
DIODE SCHOTTKY 30V 200MA SOD123

Similar Products

Part Number BAT43W RHG BAT42W RHG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 650 mV @ 50 mA 1 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns
Current - Reverse Leakage @ Vr 500 nA @ 25 V 500 nA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-123 SOD-123
Supplier Device Package SOD-123 SOD-123
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F

Related Product By Brand

1N4937GH
1N4937GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43X RSG
BAT43X RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD523F
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR420 B0G
MUR420 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B3V3 L0G
BZV55B3V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55B18 L1G
BZV55B18 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW MINI MELF
BZV55B47 L1G
BZV55B47 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZX585B8V2 RKG
BZX585B8V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 200MW SOD523F
BC807-16 RFG
BC807-16 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23
BC856B RFG
BC856B RFG
Taiwan Semiconductor Corporation
TRANS PNP 65V 0.1A SOT23