MMBT3904L RFG
  • Share:

Taiwan Semiconductor Corporation MMBT3904L RFG

Manufacturer No:
MMBT3904L RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904L RFG is a high-performance NPN small signal transistor manufactured by Taiwan Semiconductor Corporation. This transistor is designed for low power loss and high efficiency, making it ideal for various electronic applications. It is packaged in the SOT-23 case, which is suitable for automated placement and offers a compact footprint. The device is RoHS compliant and halogen-free, aligning with modern environmental standards.

Key Specifications

ParameterSymbolValueUnit
Collector-Base Breakdown VoltageVCBO60V
Collector-Emitter Breakdown VoltageVCEO40V
Emitter-Base Breakdown VoltageVEBO6V
Collector CurrentIC200mA
Power DissipationPD300mW
Junction TemperatureTJ-55 to +150°C
Storage TemperatureTSTG-55 to +150°C
DC Current Gain (hFE)hFE100 - 400
Collector-Emitter Saturation VoltageVCE(sat)- - 0.30V
Base-Emitter Saturation VoltageVBE(sat)- - 0.95V
Transition FrequencyfT250MHz

Key Features

  • Low power loss and high efficiency
  • Ideal for automated placement due to SOT-23 packaging
  • High surge current capability
  • Moisture sensitivity level: level 1, per J-STD-020
  • RoHS Compliant and halogen-free according to IEC 61249-2-21
  • Matte tin plated leads, solderable per J-STD-002
  • Meets JESD 201 class 1A whisker test

Applications

  • Switching mode power supply (SMPS)
  • Adapters
  • Lighting applications
  • On-board DC/DC converters

Q & A

  1. What is the package type of the MMBT3904L RFG transistor? The MMBT3904L RFG transistor is packaged in the SOT-23 case.
  2. What is the maximum collector current of the MMBT3904L RFG? The maximum collector current is 200 mA.
  3. Is the MMBT3904L RFG RoHS compliant? Yes, the MMBT3904L RFG is RoHS compliant and halogen-free.
  4. What are the typical applications of the MMBT3904L RFG? Typical applications include switching mode power supplies, adapters, lighting applications, and on-board DC/DC converters.
  5. What is the junction temperature range of the MMBT3904L RFG? The junction temperature range is -55 to +150 °C.
  6. What is the power dissipation of the MMBT3904L RFG? The power dissipation is 300 mW.
  7. Does the MMBT3904L RFG meet any specific whisker test standards? Yes, it meets JESD 201 class 1A whisker test standards.
  8. What is the transition frequency of the MMBT3904L RFG? The transition frequency is 250 MHz.
  9. What are the base-emitter and collector-emitter saturation voltages of the MMBT3904L RFG? The base-emitter saturation voltage is up to 0.95 V, and the collector-emitter saturation voltage is up to 0.30 V.
  10. Is the MMBT3904L RFG suitable for automated placement? Yes, it is ideal for automated placement.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:300 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.18
925

Please send RFQ , we will respond immediately.

Similar Products

Part Number MMBT3904L RFG MMBT3906L RFG MMBT3904 RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA 100nA (ICBO) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 300 mW 350 mW 300 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23 SOT-23

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
SMMBTA92LT1G
SMMBTA92LT1G
onsemi
TRANS PNP 300V 0.5A SOT23-3
BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BFS20,235
BFS20,235
Nexperia USA Inc.
TRANS NPN 20V 0.025A TO236AB
BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC857AMTF
BC857AMTF
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223

Related Product By Brand

1.5KE68AHB0G
1.5KE68AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
BAS40-06 RFG
BAS40-06 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 40V SOT23
BAS316 RRG
BAS316 RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250MA SOD323
1N4007GH
1N4007GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
MUR460SH
MUR460SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MUR420S V7G
MUR420S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR460SHM6G
MUR460SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4007G B0G
1N4007G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT42-L0 R0
BAT42-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55C24 L1G
BZV55C24 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 24V 500MW MINI MELF