MMBT3904L RFG
  • Share:

Taiwan Semiconductor Corporation MMBT3904L RFG

Manufacturer No:
MMBT3904L RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904L RFG is a high-performance NPN small signal transistor manufactured by Taiwan Semiconductor Corporation. This transistor is designed for low power loss and high efficiency, making it ideal for various electronic applications. It is packaged in the SOT-23 case, which is suitable for automated placement and offers a compact footprint. The device is RoHS compliant and halogen-free, aligning with modern environmental standards.

Key Specifications

ParameterSymbolValueUnit
Collector-Base Breakdown VoltageVCBO60V
Collector-Emitter Breakdown VoltageVCEO40V
Emitter-Base Breakdown VoltageVEBO6V
Collector CurrentIC200mA
Power DissipationPD300mW
Junction TemperatureTJ-55 to +150°C
Storage TemperatureTSTG-55 to +150°C
DC Current Gain (hFE)hFE100 - 400
Collector-Emitter Saturation VoltageVCE(sat)- - 0.30V
Base-Emitter Saturation VoltageVBE(sat)- - 0.95V
Transition FrequencyfT250MHz

Key Features

  • Low power loss and high efficiency
  • Ideal for automated placement due to SOT-23 packaging
  • High surge current capability
  • Moisture sensitivity level: level 1, per J-STD-020
  • RoHS Compliant and halogen-free according to IEC 61249-2-21
  • Matte tin plated leads, solderable per J-STD-002
  • Meets JESD 201 class 1A whisker test

Applications

  • Switching mode power supply (SMPS)
  • Adapters
  • Lighting applications
  • On-board DC/DC converters

Q & A

  1. What is the package type of the MMBT3904L RFG transistor? The MMBT3904L RFG transistor is packaged in the SOT-23 case.
  2. What is the maximum collector current of the MMBT3904L RFG? The maximum collector current is 200 mA.
  3. Is the MMBT3904L RFG RoHS compliant? Yes, the MMBT3904L RFG is RoHS compliant and halogen-free.
  4. What are the typical applications of the MMBT3904L RFG? Typical applications include switching mode power supplies, adapters, lighting applications, and on-board DC/DC converters.
  5. What is the junction temperature range of the MMBT3904L RFG? The junction temperature range is -55 to +150 °C.
  6. What is the power dissipation of the MMBT3904L RFG? The power dissipation is 300 mW.
  7. Does the MMBT3904L RFG meet any specific whisker test standards? Yes, it meets JESD 201 class 1A whisker test standards.
  8. What is the transition frequency of the MMBT3904L RFG? The transition frequency is 250 MHz.
  9. What are the base-emitter and collector-emitter saturation voltages of the MMBT3904L RFG? The base-emitter saturation voltage is up to 0.95 V, and the collector-emitter saturation voltage is up to 0.30 V.
  10. Is the MMBT3904L RFG suitable for automated placement? Yes, it is ideal for automated placement.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:300 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.18
925

Please send RFQ , we will respond immediately.

Similar Products

Part Number MMBT3904L RFG MMBT3906L RFG MMBT3904 RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA 100nA (ICBO) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 300 mW 350 mW 300 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23 SOT-23

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
ST13003N
ST13003N
STMicroelectronics
TRANS NPN 400V 1A SOT32-3
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
2N5191G
2N5191G
onsemi
TRANS NPN 60V 4A TO126
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
BU806 PBFREE
BU806 PBFREE
Central Semiconductor Corp
TRANS NPN 400V 8A TO220-3
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23

Related Product By Brand

BAS70-06 RFG
BAS70-06 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
MUR160S R5G
MUR160S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
BAV21W-G RHG
BAV21W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 200MA SOD123
MUR160S
MUR160S
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
1N5821 A0G
1N5821 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
1N4007G B0G
1N4007G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT43-L0 R0
BAT43-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C3V0 L0G
BZV55C3V0 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZV55B4V7 L0G
BZV55B4V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZV55B47 L1G
BZV55B47 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55C9V1 L1G
BZV55C9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF