Overview
The MMBT3906L RFG is a general-purpose PNP silicon transistor manufactured by Taiwan Semiconductor Corporation. This transistor is designed for a wide range of applications, including automotive and other sectors that require unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with stringent automotive standards. The device is also Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -40 | Vdc |
| Collector-Base Voltage | VCBO | -40 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -200 | mAdc |
| Collector Current - Peak | ICM | -800 | mAdc |
| Junction and Storage Temperature | TJ, Tstg | -65 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| DC Current Gain (IC = -1.0 mAdc, VCE = -1.0 Vdc) | HFE | 60 - 300 | - |
| Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VCE(sat) | -0.25 - 0.4 | Vdc |
| Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VBE(sat) | -0.65 - 0.85 | Vdc |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
- High DC current gain (HFE) ranging from 60 to 300, depending on the collector current.
- Low collector-emitter and base-emitter saturation voltages, enhancing efficiency in switching applications.
- Fast switching characteristics with delay, rise, storage, and fall times suitable for high-frequency operations.
- Small-signal characteristics such as high current-gain bandwidth product (fT) and low input capacitance.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Switching circuits: Ideal for high-frequency switching applications due to its fast switching times and low saturation voltages.
- Amplifier circuits: Can be used in audio and general-purpose amplifier circuits due to its high DC current gain and low noise figure.
- General-purpose electronics: Applicable in a wide range of electronic devices requiring reliable and efficient transistor performance.
Q & A
- What is the maximum collector-emitter voltage of the MMBT3906L RFG transistor?
The maximum collector-emitter voltage (VCEO) is -40 Vdc.
- What is the continuous collector current rating of the MMBT3906L RFG transistor?
The continuous collector current (IC) is -200 mAdc.
- Is the MMBT3906L RFG transistor RoHS compliant?
Yes, the MMBT3906L RFG transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the typical DC current gain (HFE) of the MMBT3906L RFG transistor?
The typical DC current gain (HFE) ranges from 60 to 300, depending on the collector current.
- What are the typical collector-emitter and base-emitter saturation voltages?
The typical collector-emitter saturation voltage (VCE(sat)) is -0.25 to -0.4 Vdc, and the base-emitter saturation voltage (VBE(sat)) is -0.65 to -0.85 Vdc.
- What are the thermal characteristics of the MMBT3906L RFG transistor?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W.
- What are the typical switching times for the MMBT3906L RFG transistor?
The delay time (td) is approximately 35 ns, the rise time (tr) is approximately 35 ns, the storage time (ts) is approximately 225 ns, and the fall time (tf) is approximately 75 ns.
- What is the current-gain bandwidth product (fT) of the MMBT3906L RFG transistor?
The current-gain bandwidth product (fT) is 250 MHz.
- What are the typical noise figure variations for the MMBT3906L RFG transistor?
The noise figure (NF) is approximately 4.0 dB at specific operating conditions.
- What is the package type of the MMBT3906L RFG transistor?
The transistor is packaged in a SOT-23 (TO-236) case.
