MUR160A B0G
  • Share:

Taiwan Semiconductor Corporation MUR160A B0G

Manufacturer No:
MUR160A B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160A B0G is a high-efficiency recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for high-performance applications requiring fast recovery times and high voltage ratings. It is part of the MUR160 series, known for its reliability and efficiency in various electrical systems.

Key Specifications

Parameter Value Unit
Maximum Average Forward Current 1 A
Peak Forward Surge Current 30 A
Maximum Reverse Voltage 600 V
Forward Voltage Drop 1.3 V
Reverse Recovery Time 50 ns
Package Type DO-204AC (DO-41)
Operating Temperature Range -55 to 150 °C
Weight Approx. 0.35 grams

Key Features

  • High-efficiency recovery rectifier with fast recovery time of 50 ns.
  • Maximum average forward current of 1 A and peak forward surge current of 30 A.
  • Maximum reverse voltage of 600 V, making it suitable for high-voltage applications.
  • Low forward voltage drop of 1.3 V, reducing power losses.
  • DO-204AC (DO-41) package type, suitable for through-hole mounting.
  • Operating temperature range from -55°C to 150°C, ensuring reliability in various environments.
  • UL flammability classification rating 94V-0 and moisture sensitivity level 1 per J-STD-020C.

Applications

  • Power supplies and switching power converters.
  • Rectifier circuits in single-phase and three-phase systems.
  • High-frequency switching applications.
  • Automotive and industrial power systems.
  • Capacitive load applications with derated current.

Q & A

  1. What is the maximum average forward current of the MUR160A B0G diode?

    The maximum average forward current is 1 A.

  2. What is the peak forward surge current rating of the MUR160A B0G?

    The peak forward surge current is 30 A.

  3. What is the maximum reverse voltage of the MUR160A B0G diode?

    The maximum reverse voltage is 600 V.

  4. What is the forward voltage drop of the MUR160A B0G?

    The forward voltage drop is approximately 1.3 V.

  5. What is the package type of the MUR160A B0G diode?

    The package type is DO-204AC (DO-41).

  6. What is the operating temperature range of the MUR160A B0G?

    The operating temperature range is from -55°C to 150°C.

  7. Is the MUR160A B0G diode RoHS compliant?
  8. What are the typical applications of the MUR160A B0G diode?

    Typical applications include power supplies, switching power converters, and high-frequency switching applications.

  9. How does the MUR160A B0G handle capacitive loads?

    For capacitive loads, the current should be derated by 20%.

  10. What is the weight of the MUR160A B0G diode?

    The weight is approximately 0.35 grams.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
441

Please send RFQ , we will respond immediately.

Same Series
MUR160AHR1G
MUR160AHR1G
DIODE GEN PURP 600V 1A DO204AL
MUR160A A0G
MUR160A A0G
DIODE GEN PURP 600V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
DIODE GEN PURP 600V 1A DO204AL
MUR160A B0G
MUR160A B0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number MUR160A B0G MUR160AHB0G MUR190A B0G MUR160 B0G MUR160A A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 900 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 75 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AC (DO-15) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK

Related Product By Brand

BAT54S RFG
BAT54S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT23
BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N4007G B0G
1N4007G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
MUR460S R7
MUR460S R7
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZX84C3V0 RFG
BZX84C3V0 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 300MW SOT23
BZV55C5V1 L0G
BZV55C5V1 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B5V6 L0G
BZV55B5V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZX585B6V2 RSG
BZX585B6V2 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 200MW SOD523F
BZX79C20 A0G
BZX79C20 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW DO35