BAS316WS RRG
  • Share:

Taiwan Semiconductor Corporation BAS316WS RRG

Manufacturer No:
BAS316WS RRG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250MA SOD323F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS316WS RRG is a high-speed switching diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for high-efficiency and low power loss, making it ideal for various electronic applications. It features a single die configuration in the SOD-323F package, which is suitable for automated placement. The diode is RoHS compliant and halogen-free, aligning with environmental standards.

Key Specifications

ParameterSymbolValueUnit
Repetitive Peak Reverse VoltageVRRM100V
Forward CurrentIF250mA
Forward Voltage at IF = 150mAVF1.25V
Non-repetitive Peak Forward Surge Current (t = 1ms)IFSM1A
Junction Temperature RangeTJ-65 to +150°C
Storage Temperature RangeTSTG-65 to +150°C
Junction-to-Ambient Thermal ResistanceRθJA351°C/W
Reverse Recovery Timetrr4.0ns

Key Features

  • Low power loss, high efficiency
  • Ideal for automated placement
  • High surge current capability
  • Moisture sensitivity level: level 1, per J-STD-020
  • RoHS Compliant and halogen-free according to IEC 61249-2-21
  • Meet JESD 201 class 1A whisker test
  • Terminal: Matte tin plated leads, solderable per J-STD-002

Applications

  • Switching mode power supply (SMPS)
  • Adapters
  • Lighting applications
  • On-board DC/DC converters

Q & A

  1. What is the repetitive peak reverse voltage of the BAS316WS RRG diode? The repetitive peak reverse voltage is 100V.
  2. What is the forward current rating of the BAS316WS RRG diode? The forward current rating is 250mA.
  3. What is the forward voltage at 150mA for the BAS316WS RRG diode? The forward voltage at 150mA is 1.25V.
  4. Is the BAS316WS RRG diode RoHS compliant? Yes, the BAS316WS RRG diode is RoHS compliant and halogen-free.
  5. What is the junction temperature range for the BAS316WS RRG diode? The junction temperature range is -65°C to +150°C.
  6. What are the typical applications of the BAS316WS RRG diode? Typical applications include switching mode power supplies (SMPS), adapters, lighting applications, and on-board DC/DC converters.
  7. What is the package type of the BAS316WS RRG diode? The package type is SOD-323F.
  8. What is the reverse recovery time of the BAS316WS RRG diode? The reverse recovery time is 4.0 ns.
  9. Is the BAS316WS RRG diode suitable for automated placement? Yes, it is ideal for automated placement.
  10. What is the moisture sensitivity level of the BAS316WS RRG diode? The moisture sensitivity level is level 1, per J-STD-020.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-90, SOD-323F
Supplier Device Package:SOD-323F
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.22
213

Please send RFQ , we will respond immediately.

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

1.5KE6.8A R0G
1.5KE6.8A R0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
BAW56 RFG
BAW56 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
MUR1660CTH
MUR1660CTH
Taiwan Semiconductor Corporation
DIODE ARRAY GP 600V 16A TO220AB
MBR10100CTH
MBR10100CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO220
BAV21W RHG
BAV21W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD123
1N4004GHA0G
1N4004GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR420HA0G
MUR420HA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
1N4007GHB0G
1N4007GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
BZV55C27 L0G
BZV55C27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55C4V3 L0G
BZV55C4V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.3V 500MW MINI MELF
MMBT3904 RFG
MMBT3904 RFG
Taiwan Semiconductor Corporation
TRANS NPN 40V 0.2A SOT23
BC807-25W RFG
BC807-25W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323