MUR160AHB0G
  • Share:

Taiwan Semiconductor Corporation MUR160AHB0G

Manufacturer No:
MUR160AHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160AHB0G is a high-efficiency, super-fast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed for high-frequency switching applications and is known for its low power loss and high reliability. The MUR160AHB0G is housed in a DO-41 package, making it suitable for automated assembly and various electronic systems.

Key Specifications

Characteristic Symbol Unit MUR160
Peak Repetitive Reverse Voltage VRRM V 600
Working Peak Reverse Voltage VRWM V 600
DC Blocking Voltage VR V 600
Average Rectified Output Current @ Tj = 120°C IO A 1.0
Non-Repetitive Peak Forward Surge Current (8.3ms single half sine-wave) IFSM A 35
Forward Voltage @ IF = 1.0A, TJ = 25°C VFM V 1.25
Reverse Recovery Time trr ns 50-75
Typical Junction Capacitance Cj pF 45
Operating and Storage Temperature Range Tj, TSTG °C -65 to +175

Key Features

  • Super-Fast Recovery Time: The MUR160AHB0G features a super-fast recovery time, making it ideal for high-efficiency applications.
  • Low Forward Voltage Drop: It has a low forward voltage drop, which reduces power loss and enhances overall efficiency.
  • High Current Capability: The diode can handle high current levels, making it suitable for a variety of power applications.
  • Surge Overload Rating: It has a surge overload rating of up to 35A peak, providing robust protection against transient surges.
  • Lead Free Finish and RoHS Compliant: The component is lead-free and RoHS compliant, ensuring environmental sustainability.
  • AEC-Q101 Qualified: The MUR160AHB0G is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

Applications

  • High-Frequency Switching Applications: Ideal for high-frequency switching due to its super-fast recovery time and low power loss.
  • Automotive Systems: Suitable for automotive applications due to its AEC-Q101 qualification and robust surge overload rating.
  • Power Supplies: Used in power supplies for its high efficiency and ability to handle high current levels.
  • Industrial Control Systems: Applicable in industrial control systems requiring reliable and efficient rectification.

Q & A

  1. What is the peak repetitive reverse voltage of the MUR160AHB0G?

    The peak repetitive reverse voltage (VRRM) of the MUR160AHB0G is 600V.

  2. What is the average rectified output current of the MUR160AHB0G at Tj = 120°C?

    The average rectified output current (IO) at Tj = 120°C is 1.0A.

  3. What is the forward voltage drop of the MUR160AHB0G at IF = 1.0A and TJ = 25°C?

    The forward voltage drop (VFM) at IF = 1.0A and TJ = 25°C is 1.25V.

  4. What is the reverse recovery time of the MUR160AHB0G?

    The reverse recovery time (trr) of the MUR160AHB0G is between 50-75 ns.

  5. Is the MUR160AHB0G RoHS compliant?
  6. What is the operating temperature range of the MUR160AHB0G?

    The operating and storage temperature range of the MUR160AHB0G is -65°C to +175°C.

  7. What is the surge overload rating of the MUR160AHB0G?

    The surge overload rating of the MUR160AHB0G is up to 35A peak.

  8. Is the MUR160AHB0G suitable for automotive applications?
  9. What package type is the MUR160AHB0G available in?

    The MUR160AHB0G is available in a DO-41 package.

  10. What are some common applications of the MUR160AHB0G?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
532

Please send RFQ , we will respond immediately.

Same Series
MUR160AHR1G
MUR160AHR1G
DIODE GEN PURP 600V 1A DO204AL
MUR160A A0G
MUR160A A0G
DIODE GEN PURP 600V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
DIODE GEN PURP 600V 1A DO204AL
MUR160A B0G
MUR160A B0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number MUR160AHB0G MUR160HB0G MUR190AHB0G MUR160A B0G MUR160AHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 900 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 75 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AC (DO-15) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15

Related Product By Brand

1.5KE120A A0G
1.5KE120A A0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
1N4148W-G RHG
1N4148W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
1N4004G R1G
1N4004G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZV55C3V9 L0G
BZV55C3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55B4V7 L0G
BZV55B4V7 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.7V 500MW MINI MELF
BZX585B5V1 RSG
BZX585B5V1 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 200MW SOD523F
ZM4742A L0G
ZM4742A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 1W MELF
BZV55C39 L1G
BZV55C39 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 39V 500MW MINI MELF
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23
BC848B RFG
BC848B RFG
Taiwan Semiconductor Corporation
TRANS NPN 30V 0.1A SOT23