MUR160AHB0G
  • Share:

Taiwan Semiconductor Corporation MUR160AHB0G

Manufacturer No:
MUR160AHB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR160AHB0G is a high-efficiency, super-fast recovery rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed for high-frequency switching applications and is known for its low power loss and high reliability. The MUR160AHB0G is housed in a DO-41 package, making it suitable for automated assembly and various electronic systems.

Key Specifications

Characteristic Symbol Unit MUR160
Peak Repetitive Reverse Voltage VRRM V 600
Working Peak Reverse Voltage VRWM V 600
DC Blocking Voltage VR V 600
Average Rectified Output Current @ Tj = 120°C IO A 1.0
Non-Repetitive Peak Forward Surge Current (8.3ms single half sine-wave) IFSM A 35
Forward Voltage @ IF = 1.0A, TJ = 25°C VFM V 1.25
Reverse Recovery Time trr ns 50-75
Typical Junction Capacitance Cj pF 45
Operating and Storage Temperature Range Tj, TSTG °C -65 to +175

Key Features

  • Super-Fast Recovery Time: The MUR160AHB0G features a super-fast recovery time, making it ideal for high-efficiency applications.
  • Low Forward Voltage Drop: It has a low forward voltage drop, which reduces power loss and enhances overall efficiency.
  • High Current Capability: The diode can handle high current levels, making it suitable for a variety of power applications.
  • Surge Overload Rating: It has a surge overload rating of up to 35A peak, providing robust protection against transient surges.
  • Lead Free Finish and RoHS Compliant: The component is lead-free and RoHS compliant, ensuring environmental sustainability.
  • AEC-Q101 Qualified: The MUR160AHB0G is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

Applications

  • High-Frequency Switching Applications: Ideal for high-frequency switching due to its super-fast recovery time and low power loss.
  • Automotive Systems: Suitable for automotive applications due to its AEC-Q101 qualification and robust surge overload rating.
  • Power Supplies: Used in power supplies for its high efficiency and ability to handle high current levels.
  • Industrial Control Systems: Applicable in industrial control systems requiring reliable and efficient rectification.

Q & A

  1. What is the peak repetitive reverse voltage of the MUR160AHB0G?

    The peak repetitive reverse voltage (VRRM) of the MUR160AHB0G is 600V.

  2. What is the average rectified output current of the MUR160AHB0G at Tj = 120°C?

    The average rectified output current (IO) at Tj = 120°C is 1.0A.

  3. What is the forward voltage drop of the MUR160AHB0G at IF = 1.0A and TJ = 25°C?

    The forward voltage drop (VFM) at IF = 1.0A and TJ = 25°C is 1.25V.

  4. What is the reverse recovery time of the MUR160AHB0G?

    The reverse recovery time (trr) of the MUR160AHB0G is between 50-75 ns.

  5. Is the MUR160AHB0G RoHS compliant?
  6. What is the operating temperature range of the MUR160AHB0G?

    The operating and storage temperature range of the MUR160AHB0G is -65°C to +175°C.

  7. What is the surge overload rating of the MUR160AHB0G?

    The surge overload rating of the MUR160AHB0G is up to 35A peak.

  8. Is the MUR160AHB0G suitable for automotive applications?
  9. What package type is the MUR160AHB0G available in?

    The MUR160AHB0G is available in a DO-41 package.

  10. What are some common applications of the MUR160AHB0G?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:27pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
532

Please send RFQ , we will respond immediately.

Same Series
MUR160AHR1G
MUR160AHR1G
DIODE GEN PURP 600V 1A DO204AL
MUR160A A0G
MUR160A A0G
DIODE GEN PURP 600V 1A DO204AL
MUR160AHA0G
MUR160AHA0G
DIODE GEN PURP 600V 1A DO204AL
MUR160A B0G
MUR160A B0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number MUR160AHB0G MUR160HB0G MUR190AHB0G MUR160A B0G MUR160AHA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 900 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.7 V @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 75 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 900 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz 15pF @ 4V, 1MHz 27pF @ 4V, 1MHz 27pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AC, DO-15, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AC (DO-15) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

1N4004GHR1G
1N4004GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR160AHB0G
MUR160AHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160HB0G
MUR160HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT43 R0
BAT43 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAS85-L0 L0G
BAS85-L0 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
BZV55C30 L0G
BZV55C30 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B30 L1G
BZV55B30 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55C2V4 L1G
BZV55C2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZV55C6V2 L1G
BZV55C6V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
MMBT2222A RFG
MMBT2222A RFG
Taiwan Semiconductor Corporation
TRANS NPN 40V 0.6A SOT23