1N4001GHR0G
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Taiwan Semiconductor Corporation 1N4001GHR0G

Manufacturer No:
1N4001GHR0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001GHR0G is a standard rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4001G to 1N4007G series, which offers a range of voltage ratings from 50V to 1000V. The 1N4001GHR0G specifically has a maximum repetitive peak reverse voltage (VRRM) of 50V and is designed for general-purpose rectification applications. It features a glass passivated chip junction, high current capability, and low forward voltage drop, making it suitable for various electronic circuits.

Key Specifications

Parameter Symbol Unit Value
Maximum Repetitive Peak Reverse Voltage VRRM V 50
Reverse Voltage, Total RMS Value VR(RMS) V 35
Average Forward Rectified Current IF(AV) A 1
Surge Peak Forward Current, 8.3ms Single Half Sine Wave IFSM A 30
Forward Voltage at 1A VF V 1
Reverse Current at Rated VR IR µA 5 (at 25°C), 100 (at 125°C)
Junction Capacitance CJ pF 10
Junction-to-Ambient Thermal Resistance RθJA °C/W 80
Operating Junction Temperature Range TJ °C -55 to +150
Storage Temperature Range TSTG °C -55 to +150

Key Features

  • Glass Passivated Chip Junction: Ensures high reliability and stability.
  • High Current Capability: Supports up to 1A average forward rectified current.
  • Low Forward Voltage Drop: Typically 1V at 1A, reducing power loss and increasing efficiency.
  • High Surge Current Capability: Can handle peak forward surge currents up to 30A for 8.3ms.
  • AEC-Q101 Qualified: Suitable for automotive applications, ensuring high reliability and performance under harsh conditions.
  • Compliant to RoHS and WEEE Directives: Environmentally friendly and compliant with international regulations.
  • Halogen-Free: Meets IEC 61249-2-21 definition for halogen-free materials.
  • Pure Tin Plated Leads: Solderable per JESD22-B102 and meets JESD 201 class 2 whisker test.

Applications

  • General-Purpose Rectification: Suitable for various DC power supplies, switching power supplies, and other rectification applications.
  • Automotive Systems: AEC-Q101 qualified, making it suitable for use in automotive electronics.
  • Consumer Electronics: Can be used in a wide range of consumer electronic devices requiring reliable rectification.
  • Industrial Power Supplies: Applicable in industrial power supply units due to its high current and surge capabilities.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4001GHR0G diode?

    The maximum repetitive peak reverse voltage (VRRM) is 50V.

  2. What is the average forward rectified current rating of this diode?

    The average forward rectified current (IF(AV)) is 1A.

  3. What is the forward voltage drop at 1A for the 1N4001GHR0G?

    The forward voltage drop (VF) at 1A is typically 1V.

  4. Is the 1N4001GHR0G diode AEC-Q101 qualified?
  5. What is the junction-to-ambient thermal resistance of this diode?

    The junction-to-ambient thermal resistance (RθJA) is 80°C/W.

  6. What is the operating junction temperature range for the 1N4001GHR0G?

    The operating junction temperature range (TJ) is -55°C to +150°C.

  7. Is the 1N4001GHR0G compliant with RoHS and WEEE directives?
  8. What is the package type of the 1N4001GHR0G diode?

    The package type is DO-204AL (DO-41), and it is available in tape and reel or ammo box packaging.

  9. Can the 1N4001GHR0G handle high surge currents?
  10. What is the typical junction capacitance of the 1N4001GHR0G?

    The typical junction capacitance (CJ) is 10 pF at 1 MHz and 4.0V reverse voltage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N4001GHR0G 1N4001GHR1G 1N4002GHR0G 1N4001G R0G 1N4001GHA0G 1N4001GHB0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V 50 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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