1N4007G A0G
  • Share:

Taiwan Semiconductor Corporation 1N4007G A0G

Manufacturer No:
1N4007G A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007G A0G, produced by Taiwan Semiconductor Corporation, is a general-purpose rectifier diode designed for a wide range of applications. This diode is part of the 1N4007 series and is known for its high current capability and low forward voltage drop. It features a glass passivated die construction, which enhances its reliability and performance. The 1N4007G A0G is packaged in a DO-41 (DO-204AL) case, making it suitable for through-hole mounting. This diode is RoHS compliant and has a lead-free finish, aligning with modern environmental standards.

Key Specifications

Parameter Value Unit
Repetitive Reverse Voltage (Vrrm Max) 1000 V
Forward Current (If(AV)) 1 A
Diode Configuration Single
Forward Voltage (VF Max) 1.1 V @ 1 A
Forward Surge Current (Ifsm Max) 30 A
Operating Temperature Range -65°C to +150°C °C
Diode Case Style DO-41 (DO-204AL)
No. of Pins 2
Reverse Leakage Current 5 µA @ 1000 V
Reverse Recovery Time Standard Recovery >500ns, > 200mA (Io)
Mounting Type Through Hole

Key Features

  • High Current Capability: The 1N4007G A0G can handle an average forward current of 1 A and a peak forward surge current of 30 A.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1.1 V at 1 A, ensuring efficient operation.
  • Glass Passivated Die Construction: This construction enhances the diode's reliability and performance.
  • RoHS Compliant: The diode is lead-free and complies with RoHS standards, making it environmentally friendly.
  • Standard Recovery Time: The diode has a standard recovery time greater than 500 ns, suitable for general-purpose applications.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -65°C to +150°C, making it versatile for various environments.

Applications

The 1N4007G A0G is suitable for a wide range of applications, including:

  • Power Supplies: Used in rectifier circuits for converting AC to DC.
  • Audio Equipment: Employed in audio circuits to protect against voltage spikes and to rectify audio signals.
  • Automotive Systems: Used in automotive electrical systems for voltage regulation and protection.
  • Industrial Control Systems: Utilized in control circuits for machinery and industrial automation.
  • Consumer Electronics: Found in various consumer electronics for power management and voltage regulation.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4007G A0G?

    The maximum repetitive reverse voltage is 1000 V.

  2. What is the average forward current rating of the 1N4007G A0G?

    The average forward current rating is 1 A.

  3. What is the maximum forward voltage drop of the 1N4007G A0G?

    The maximum forward voltage drop is 1.1 V at 1 A.

  4. What is the peak forward surge current of the 1N4007G A0G?

    The peak forward surge current is 30 A.

  5. What is the operating temperature range of the 1N4007G A0G?

    The operating temperature range is -65°C to +150°C.

  6. Is the 1N4007G A0G RoHS compliant?

    Yes, the 1N4007G A0G is RoHS compliant and has a lead-free finish.

  7. What is the recovery time of the 1N4007G A0G?

    The recovery time is greater than 500 ns, classified as standard recovery.

  8. What type of packaging does the 1N4007G A0G use?

    The diode is packaged in a DO-41 (DO-204AL) case.

  9. What is the reverse leakage current of the 1N4007G A0G?

    The reverse leakage current is 5 µA at 1000 V.

  10. What are some common applications of the 1N4007G A0G?

    Common applications include power supplies, audio equipment, automotive systems, industrial control systems, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.42
1,458

Please send RFQ , we will respond immediately.

Same Series
1N4001G R1G
1N4001G R1G
DIODE GEN PURP 50V 1A DO204AL
1N4003G R1G
1N4003G R1G
DIODE GEN PURP 200V 1A DO204AL
1N4005G R1G
1N4005G R1G
DIODE GEN PURP 600V 1A DO204AL
1N4006G R1G
1N4006G R1G
DIODE GEN PURP 800V 1A DO204AL
1N4003GHR0G
1N4003GHR0G
DIODE GEN PURP 200V 1A DO204AL
1N4002GHA0G
1N4002GHA0G
DIODE GEN PURP 100V 1A DO204AL
1N4003G A0G
1N4003G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4003GHA0G
1N4003GHA0G
DIODE GEN PURP 200V 1A DO204AL
1N4003G B0G
1N4003G B0G
DIODE GEN PURP 200V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL
1N4007GHB0G
1N4007GHB0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4007G A0G 1N4007GHA0G 1N4007G B0G 1N4007GH A0G 1N4006G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

BAT54 RFG
BAT54 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
1N4937GH
1N4937GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR460SH
MUR460SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4001G R1G
1N4001G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55C39 L0G
BZV55C39 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 39V 500MW MINI MELF
BZV55C4V3 L0G
BZV55C4V3 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 4.3V 500MW MINI MELF
BZV55B16 L0G
BZV55B16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZX585B8V2 RSG
BZX585B8V2 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 200MW SOD523F
BZV55B15 L1G
BZV55B15 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZX55C18 A0G
BZX55C18 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 18V 500MW DO35