1N4007G A0G
  • Share:

Taiwan Semiconductor Corporation 1N4007G A0G

Manufacturer No:
1N4007G A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007G A0G, produced by Taiwan Semiconductor Corporation, is a general-purpose rectifier diode designed for a wide range of applications. This diode is part of the 1N4007 series and is known for its high current capability and low forward voltage drop. It features a glass passivated die construction, which enhances its reliability and performance. The 1N4007G A0G is packaged in a DO-41 (DO-204AL) case, making it suitable for through-hole mounting. This diode is RoHS compliant and has a lead-free finish, aligning with modern environmental standards.

Key Specifications

Parameter Value Unit
Repetitive Reverse Voltage (Vrrm Max) 1000 V
Forward Current (If(AV)) 1 A
Diode Configuration Single
Forward Voltage (VF Max) 1.1 V @ 1 A
Forward Surge Current (Ifsm Max) 30 A
Operating Temperature Range -65°C to +150°C °C
Diode Case Style DO-41 (DO-204AL)
No. of Pins 2
Reverse Leakage Current 5 µA @ 1000 V
Reverse Recovery Time Standard Recovery >500ns, > 200mA (Io)
Mounting Type Through Hole

Key Features

  • High Current Capability: The 1N4007G A0G can handle an average forward current of 1 A and a peak forward surge current of 30 A.
  • Low Forward Voltage Drop: The diode has a maximum forward voltage drop of 1.1 V at 1 A, ensuring efficient operation.
  • Glass Passivated Die Construction: This construction enhances the diode's reliability and performance.
  • RoHS Compliant: The diode is lead-free and complies with RoHS standards, making it environmentally friendly.
  • Standard Recovery Time: The diode has a standard recovery time greater than 500 ns, suitable for general-purpose applications.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -65°C to +150°C, making it versatile for various environments.

Applications

The 1N4007G A0G is suitable for a wide range of applications, including:

  • Power Supplies: Used in rectifier circuits for converting AC to DC.
  • Audio Equipment: Employed in audio circuits to protect against voltage spikes and to rectify audio signals.
  • Automotive Systems: Used in automotive electrical systems for voltage regulation and protection.
  • Industrial Control Systems: Utilized in control circuits for machinery and industrial automation.
  • Consumer Electronics: Found in various consumer electronics for power management and voltage regulation.

Q & A

  1. What is the maximum repetitive reverse voltage of the 1N4007G A0G?

    The maximum repetitive reverse voltage is 1000 V.

  2. What is the average forward current rating of the 1N4007G A0G?

    The average forward current rating is 1 A.

  3. What is the maximum forward voltage drop of the 1N4007G A0G?

    The maximum forward voltage drop is 1.1 V at 1 A.

  4. What is the peak forward surge current of the 1N4007G A0G?

    The peak forward surge current is 30 A.

  5. What is the operating temperature range of the 1N4007G A0G?

    The operating temperature range is -65°C to +150°C.

  6. Is the 1N4007G A0G RoHS compliant?

    Yes, the 1N4007G A0G is RoHS compliant and has a lead-free finish.

  7. What is the recovery time of the 1N4007G A0G?

    The recovery time is greater than 500 ns, classified as standard recovery.

  8. What type of packaging does the 1N4007G A0G use?

    The diode is packaged in a DO-41 (DO-204AL) case.

  9. What is the reverse leakage current of the 1N4007G A0G?

    The reverse leakage current is 5 µA at 1000 V.

  10. What are some common applications of the 1N4007G A0G?

    Common applications include power supplies, audio equipment, automotive systems, industrial control systems, and consumer electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.42
1,458

Please send RFQ , we will respond immediately.

Same Series
1N4001G R0G
1N4001G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4005GHA0G
1N4005GHA0G
DIODE GEN PURP 600V 1A DO204AL
1N4001GHR1G
1N4001GHR1G
DIODE GEN PURP 50V 1A DO204AL
1N4003G R1G
1N4003G R1G
DIODE GEN PURP 200V 1A DO204AL
1N4004GHR1G
1N4004GHR1G
DIODE GEN PURP 400V 1A DO204AL
1N4007GHR1G
1N4007GHR1G
DIODE GEN PURP 1A DO204AL
1N4002G R0G
1N4002G R0G
DIODE GEN PURP 100V 1A DO204AL
1N4003GHA0G
1N4003GHA0G
DIODE GEN PURP 200V 1A DO204AL
1N4001G B0G
1N4001G B0G
DIODE GEN PURP 50V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4005GHB0G
1N4005GHB0G
DIODE GEN PURP 600V 1A DO204AL
1N4007G B0G
1N4007G B0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4007G A0G 1N4007GHA0G 1N4007G B0G 1N4007GH A0G 1N4006G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 1A (DC) 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC

Related Product By Brand

1.5KE6.8A A0G
1.5KE6.8A A0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
MUR420SHR7G
MUR420SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR420 B0G
MUR420 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
LL4007G L0G
LL4007G L0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A MELF
BZX85C15 A0G
BZX85C15 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 1.3W DO204AL
BZV55C51 L1G
BZV55C51 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 500MW MINI MELF
BZV55C13 L1G
BZV55C13 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW MINI MELF
BZV55C20 L1G
BZV55C20 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW MINI MELF
BZX55C10 A0G
BZX55C10 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW DO35
BZX55C8V2 A0G
BZX55C8V2 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW DO35
BZX79B3V6 A0G
BZX79B3V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW DO35
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23