1N4004G B0G
  • Share:

Taiwan Semiconductor Corporation 1N4004G B0G

Manufacturer No:
1N4004G B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004G B0G is a glass passivated rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4001G-K to 1N4007G-K series, which offers a range of voltage ratings from 50V to 1000V. The 1N4004G B0G specifically has a repetitive peak reverse voltage (VRRM) of 400V and is designed for high reliability and efficiency in various electrical applications.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 400 V
Maximum DC Blocking Voltage VDC 400 V
Forward Current (Average) IF(AV) 1 A
Surge Peak Forward Current (8.3 ms single half sine-wave) IFSM 30 A
Junction Temperature TJ -55 to +150 °C
Storage Temperature TSTG -55 to +150 °C
Forward Voltage per Diode VF - 1 V
Reverse Current @ Rated VR per Diode IR - 5 µA (TJ = 25°C), - 100 µA (TJ = 125°C) µA
Junction Capacitance CJ 10 pF
Package - DO-204AL (DO-41) -
Molding Compound - Meets UL 94V-0 flammability rating, Halogen-free -

Key Features

  • Glass Passivated Chip Junction: Ensures high reliability and durability.
  • High Current Capability, Low VF: Supports high current applications with minimal forward voltage drop.
  • High Surge Current Capability: Can handle surge currents up to 30A for 8.3 ms single half sine-wave.
  • Low Power Loss, High Efficiency: Optimized for efficient operation in various power supply applications.
  • Compliant to RoHS Directive and WEEE: Meets environmental regulations for lead-free and waste reduction.
  • Halogen-free: Compliant with IEC 61249-2-21, ensuring safety and environmental compliance.

Applications

  • Switching Mode Power Supply (SMPS): Suitable for high-efficiency power supplies.
  • Adapters: Used in various adapter applications requiring reliable rectification.
  • TV and Monitor: Commonly used in consumer electronics for power rectification.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the 1N4004G B0G diode?

    The VRRM of the 1N4004G B0G diode is 400V.

  2. What is the maximum forward current (IF(AV)) of the 1N4004G B0G diode?

    The maximum forward current (IF(AV)) is 1A.

  3. What is the surge peak forward current (IFSM) of the 1N4004G B0G diode?

    The surge peak forward current (IFSM) is 30A for an 8.3 ms single half sine-wave.

  4. What is the junction temperature range of the 1N4004G B0G diode?

    The junction temperature range is -55°C to +150°C.

  5. Is the 1N4004G B0G diode RoHS compliant?
  6. What is the package type of the 1N4004G B0G diode?

    The package type is DO-204AL (DO-41).

  7. Does the 1N4004G B0G diode meet UL 94V-0 flammability rating?
  8. Is the 1N4004G B0G diode halogen-free?
  9. What are some common applications of the 1N4004G B0G diode?
  10. What is the forward voltage drop (VF) of the 1N4004G B0G diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
244

Please send RFQ , we will respond immediately.

Same Series
1N4007G A0G
1N4007G A0G
DIODE GEN PURP 1KV 1A DO204AL
1N4005GHA0G
1N4005GHA0G
DIODE GEN PURP 600V 1A DO204AL
1N4003GHR1G
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4005GHR1G
1N4005GHR1G
DIODE GEN PURP 600V 1A DO204AL
1N4006G R1G
1N4006G R1G
DIODE GEN PURP 800V 1A DO204AL
1N4007G R1G
1N4007G R1G
DIODE GEN PURP 1A DO204AL
1N4001G A0G
1N4001G A0G
DIODE GEN PURP 50V 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4003G A0G
1N4003G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4004G A0G
1N4004G A0G
DIODE GEN PURP 400V 1A DO204AL
1N4002GHB0G
1N4002GHB0G
DIODE GEN PURP 100V 1A DO204AL
1N4006G B0G
1N4006G B0G
DIODE GEN PURP 800V 1A DO204AL

Similar Products

Part Number 1N4004G B0G 1N4004GHB0G 1N4005G B0G 1N4003G B0G 1N4004G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 600 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523

Related Product By Brand

BAV99W RVG
BAV99W RVG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT323
MUR420S
MUR420S
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR420S V7G
MUR420S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR120SHR5G
MUR120SHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
MUR420 B0G
MUR420 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BAT42 A0
BAT42 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C56 L0G
BZV55C56 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 56V 500MW MINI MELF
BZV55B11 L0G
BZV55B11 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 11V 500MW MINI MELF
BZV55B68 L0G
BZV55B68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZV55B8V2 L1G
BZV55B8V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW MINI MELF
BZV55C2V7 L1G
BZV55C2V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF