1N4001G R0G
  • Share:

Taiwan Semiconductor Corporation 1N4001G R0G

Manufacturer No:
1N4001G R0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001G R0G is a standard recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4001G series, which is widely used in various electronic applications due to its robust specifications and reliability. The 1N4001G R0G is designed to handle a peak repetitive reverse voltage of 50V and an average forward current of 1A, making it suitable for a range of power rectification tasks.

Key Specifications

Parameter Symbol Unit Value
Peak Repetitive Reverse Voltage VRRM V 50
Maximum DC Blocking Voltage VDC V 50
Average Forward Rectified Output Current @ TA = 75°C IO A 1.0
Non-Repetitive Peak Forward Surge Current (8.3ms single half sine-wave) IFSM A 30
Forward Voltage @ IF = 1.0A VFM V 1.0
Peak Reverse Current @ TA = 25°C IRM µA 5.0
Typical Junction Capacitance (at 1MHz, VR=4.0V) CJ pF 10
Thermal Resistance Junction to Ambient RθJA °C/W 100
Operating Junction Temperature Range TJ °C -65 to +175
Storage Temperature Range TSTG °C -65 to +175
Case DO-204AL (DO-41)
Terminals Plated leads, solderable per MIL-STD-202, Method 208

Key Features

  • High Peak Reverse Voltage: The 1N4001G R0G can handle a peak repetitive reverse voltage of 50V, making it suitable for applications requiring robust voltage handling.
  • High Forward Current: With an average forward current of 1A, this diode is capable of handling substantial current loads.
  • Low Forward Voltage Drop: The diode has a forward voltage drop of 1.0V at 1A, which minimizes power loss during operation.
  • High Surge Current Capability: It can withstand a non-repetitive peak forward surge current of 30A for 8.3ms, ensuring reliability under transient conditions.
  • Green Compound and RoHS Compliance: The molding compound meets UL 94V-0 flammability rating, and the diode is RoHS compliant, making it environmentally friendly and suitable for modern electronic designs.
  • Broad Operating Temperature Range: The diode operates over a wide temperature range from -65°C to +175°C, ensuring performance in various environmental conditions.

Applications

  • Power Supplies: The 1N4001G R0G is commonly used in power supply circuits for rectification and voltage regulation.
  • DC Power Systems: It is suitable for use in DC power systems where high reliability and low forward voltage drop are essential.
  • Audio and Video Equipment: This diode can be used in audio and video equipment for power rectification and protection against voltage surges.
  • Automotive Electronics: Due to its robust specifications, it is also used in automotive electronics for various power management tasks.
  • General Purpose Rectification: The 1N4001G R0G is versatile and can be used in any application requiring a reliable and efficient rectifier diode.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4001G R0G?

    The peak repetitive reverse voltage of the 1N4001G R0G is 50V.

  2. What is the average forward current rating of the 1N4001G R0G?

    The average forward current rating of the 1N4001G R0G is 1A.

  3. What is the forward voltage drop at 1A for the 1N4001G R0G?

    The forward voltage drop at 1A for the 1N4001G R0G is 1.0V.

  4. Can the 1N4001G R0G handle surge currents?

    Yes, the 1N4001G R0G can handle a non-repetitive peak forward surge current of 30A for 8.3ms.

  5. What is the operating junction temperature range of the 1N4001G R0G?

    The operating junction temperature range of the 1N4001G R0G is -65°C to +175°C.

  6. Is the 1N4001G R0G RoHS compliant?

    Yes, the 1N4001G R0G is RoHS compliant.

  7. What is the case type of the 1N4001G R0G?

    The case type of the 1N4001G R0G is DO-204AL (DO-41).

  8. What is the typical junction capacitance of the 1N4001G R0G?

    The typical junction capacitance of the 1N4001G R0G is 10 pF at 1MHz and VR=4.0V.

  9. What are some common applications of the 1N4001G R0G?

    The 1N4001G R0G is commonly used in power supplies, DC power systems, audio and video equipment, and automotive electronics.

  10. Does the 1N4001G R0G meet any specific flammability ratings?

    Yes, the molding compound of the 1N4001G R0G meets the UL 94V-0 flammability rating.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.49
312

Please send RFQ , we will respond immediately.

Same Series
1N4001G R0G
1N4001G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4001GHR1G
1N4001GHR1G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHR1G
1N4002GHR1G
DIODE GEN PURP 100V 1A DO204AL
1N4003GHR1G
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4006GHR1G
1N4006GHR1G
DIODE GEN PURP 800V 1A DO204AL
1N4007GHR1G
1N4007GHR1G
DIODE GEN PURP 1A DO204AL
1N4002G R0G
1N4002G R0G
DIODE GEN PURP 100V 1A DO204AL
1N4003GHA0G
1N4003GHA0G
DIODE GEN PURP 200V 1A DO204AL
1N4004GHA0G
1N4004GHA0G
DIODE GEN PURP 400V 1A DO204AL
1N4006GHA0G
1N4006GHA0G
DIODE GEN PURP 800V 1A DO204AL
1N4002GHB0G
1N4002GHB0G
DIODE GEN PURP 100V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4001G R0G 1N4001G R1G 1N4001GHR0G 1N4002G R0G 1N4001G A0G 1N4001G B0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 50 V 100 V 50 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V 5 µA @ 50 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL

Related Product By Brand

1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
BAS20W RVG
BAS20W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 200MA SOT323
MBR10100H
MBR10100H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
BAS16 RFG
BAS16 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOT23
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
1N4007G B0G
1N4007G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
BZV55B16 L0G
BZV55B16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55B30 L0G
BZV55B30 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZX585B6V8 RKG
BZX585B6V8 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BZX55C10 A0G
BZX55C10 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW DO35
BC857B RFG
BC857B RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23