1N4001G R1G
  • Share:

Taiwan Semiconductor Corporation 1N4001G R1G

Manufacturer No:
1N4001G R1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001G R1G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4001G through 1N4007G series, each with different voltage ratings. The 1N4001G R1G specifically is rated for a peak repetitive reverse voltage (VRRM) of 50V and an average forward rectified current (IF) of 1A. It is widely used in various applications requiring reliable and efficient rectification.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 50 V
Maximum DC Blocking Voltage (VDC) 50 V
Average Forward Rectified Current (IF) 1 A
Forward Voltage (VF) @ IF = 1A 1 V
Non-Repetitive Peak Forward Surge Current (IFSM) 30 A
Reverse Current @ Rated VR @ TA = 25°C 5 µA
Junction Capacitance @ 1MHz, VR=4.0V 10 pF
Junction Temperature Range -55 to +150 °C
Storage Temperature Range -55 to +150 °C
Package DO-204AL (DO-41), Axial
Mounting Type Through Hole

Key Features

  • High Current Capability: The diode can handle an average forward rectified current of 1A, making it suitable for a variety of power rectification applications.
  • Low Forward Voltage Drop: With a forward voltage (VF) of 1V at 1A, it minimizes power loss during operation.
  • High Surge Current Tolerance: It can withstand a non-repetitive peak forward surge current of 30A for 8.3ms, ensuring robust performance under transient conditions.
  • Compact Package: The DO-204AL (DO-41) axial package is compact and suitable for through-hole mounting, making it easy to integrate into various circuit designs.
  • Wide Operating Temperature Range: The diode operates within a junction temperature range of -55°C to +150°C, making it versatile for different environmental conditions.
  • Compliance with Standards: The diode is ROHS3 compliant, REACH unaffected, and meets other regulatory standards, ensuring it is safe for use in global markets.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Motor Control: Employed in motor control circuits to manage the flow of current.
  • Audio Equipment: Utilized in audio equipment for rectification and voltage regulation.
  • Automotive Systems: Applied in automotive systems for various electrical functions.
  • General Electronics: Suitable for a wide range of general-purpose rectification needs in electronic circuits.

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the 1N4001G R1G diode?

    The peak repetitive reverse voltage (VRRM) of the 1N4001G R1G diode is 50V.

  2. What is the average forward rectified current (IF) of the 1N4001G R1G diode?

    The average forward rectified current (IF) of the 1N4001G R1G diode is 1A.

  3. What is the forward voltage (VF) of the 1N4001G R1G diode at 1A?

    The forward voltage (VF) of the 1N4001G R1G diode at 1A is 1V.

  4. What is the non-repetitive peak forward surge current (IFSM) of the 1N4001G R1G diode?

    The non-repetitive peak forward surge current (IFSM) of the 1N4001G R1G diode is 30A for 8.3ms.

  5. What is the junction temperature range of the 1N4001G R1G diode?

    The junction temperature range of the 1N4001G R1G diode is -55°C to +150°C.

  6. What is the package type of the 1N4001G R1G diode?

    The package type of the 1N4001G R1G diode is DO-204AL (DO-41), axial.

  7. Is the 1N4001G R1G diode ROHS compliant?

    Yes, the 1N4001G R1G diode is ROHS3 compliant.

  8. What is the typical junction capacitance of the 1N4001G R1G diode?

    The typical junction capacitance of the 1N4001G R1G diode is 10pF at 1MHz and VR=4.0V.

  9. What is the reverse current at rated VR for the 1N4001G R1G diode at TA = 25°C?

    The reverse current at rated VR for the 1N4001G R1G diode at TA = 25°C is 5µA.

  10. What are the common applications of the 1N4001G R1G diode?

    The 1N4001G R1G diode is commonly used in power supplies, motor control, audio equipment, automotive systems, and general electronics for rectification and voltage regulation.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
535

Please send RFQ , we will respond immediately.

Same Series
1N4002G A0G
1N4002G A0G
DIODE GEN PURP 100V 1A DO204AL
1N4005GHA0G
1N4005GHA0G
DIODE GEN PURP 600V 1A DO204AL
1N4001G R1G
1N4001G R1G
DIODE GEN PURP 50V 1A DO204AL
1N4001GHR1G
1N4001GHR1G
DIODE GEN PURP 50V 1A DO204AL
1N4003GHR1G
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4005G R1G
1N4005G R1G
DIODE GEN PURP 600V 1A DO204AL
1N4003GHR0G
1N4003GHR0G
DIODE GEN PURP 200V 1A DO204AL
1N4002GHA0G
1N4002GHA0G
DIODE GEN PURP 100V 1A DO204AL
1N4004GHA0G
1N4004GHA0G
DIODE GEN PURP 400V 1A DO204AL
1N4006GHA0G
1N4006GHA0G
DIODE GEN PURP 800V 1A DO204AL
1N4002GHB0G
1N4002GHB0G
DIODE GEN PURP 100V 1A DO204AL
1N4007GHB0G
1N4007GHB0G
DIODE GEN PURP 1A DO204AL

Similar Products

Part Number 1N4001G R1G 1N4001GHR1G 1N4002G R1G 1N4001G R0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SMBJ5.0CAHR5G
SMBJ5.0CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 5VWM 9.2VC DO214AA
BAT54 RFG
BAT54 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
RB751V-40 RRG
RB751V-40 RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 30MA SOD323
MUR160S
MUR160S
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
MUR460S V7G
MUR460S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N5406GHA0G
1N5406GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR420HB0G
MUR420HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55C10 L0G
BZV55C10 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZV55B2V7 L1G
BZV55B2V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZV55B3V6 L1G
BZV55B3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55C9V1 L1G
BZV55C9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF