1N4007G R1G
  • Share:

Taiwan Semiconductor Corporation 1N4007G R1G

Manufacturer No:
1N4007G R1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007G R1G diode, produced by Taiwan Semiconductor Corporation, is a general-purpose rectifier diode designed for a wide range of applications. It is part of the 1N4007 series and is known for its high reliability and robust electrical characteristics. This diode is packaged in a DO-41 (DO-204AL) case, making it suitable for through-hole mounting. The 1N4007G R1G is a single-phase, half-wave rectifier capable of handling high currents and voltages, making it a versatile component in various electronic circuits.

Key Specifications

Specification Value
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1 A
Non-Repetitive Peak Forward Surge Current (Ifsm) 30 A
Forward Voltage (Vf) (Max) @ If 1.1 V @ 1 A
Reverse Current (Ir) @ Vr 5 µA @ 1000 V
Operating Temperature - Junction -55°C ~ 150°C
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole
Capacitance @ Vr, F 10 pF @ 4 V, 1 MHz

Key Features

  • Average forward current of 1 A, making it suitable for various rectification and protection applications.
  • Non-repetitive peak forward surge current of 30 A, allowing it to handle transient high current conditions.
  • Peak repetitive reverse voltage of 1000 V, providing robust protection against reverse voltage spikes.
  • Low forward voltage drop of 1.1 V at 1 A, minimizing power losses in the circuit.
  • Standard recovery time greater than 500 ns, suitable for general-purpose rectification.
  • High reliability and high surge current capability.
  • Pb-free and RoHS compliant, ensuring environmental safety.

Applications

  • Preventing reverse polarity problems in power supplies and other circuits.
  • Half-wave and full-wave rectifiers for converting AC to DC.
  • Protection devices in power supplies, motor drives, and other high-voltage applications.
  • Current flow regulators and surge protectors.

Q & A

  1. What is the maximum reverse voltage the 1N4007G R1G can handle?

    The 1N4007G R1G can handle a maximum reverse voltage of 1000 V.

  2. What is the average forward current rating of the 1N4007G R1G?

    The average forward current rating is 1 A.

  3. What is the non-repetitive peak forward surge current of the 1N4007G R1G?

    The non-repetitive peak forward surge current is 30 A.

  4. What is the forward voltage drop at 1 A for the 1N4007G R1G?

    The forward voltage drop at 1 A is 1.1 V.

  5. What is the operating temperature range for the 1N4007G R1G?

    The operating temperature range is -55°C to 150°C.

  6. Is the 1N4007G R1G RoHS compliant?
  7. What type of package does the 1N4007G R1G come in?

    The 1N4007G R1G comes in a DO-204AL (DO-41) package.

  8. What is the reverse current leakage at 1000 V for the 1N4007G R1G?

    The reverse current leakage at 1000 V is 5 µA.

  9. Can the 1N4007G R1G be used in high-frequency applications?

    The 1N4007G R1G has a standard recovery time, making it more suitable for general-purpose rather than high-frequency applications.

  10. Is the 1N4007G R1G suitable for through-hole mounting?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
221

Please send RFQ , we will respond immediately.

Same Series
1N4005G A0G
1N4005G A0G
DIODE GEN PURP 600V 1A DO204AL
1N4002G A0G
1N4002G A0G
DIODE GEN PURP 100V 1A DO204AL
1N4002G R1G
1N4002G R1G
DIODE GEN PURP 100V 1A DO204AL
1N4005G R1G
1N4005G R1G
DIODE GEN PURP 600V 1A DO204AL
1N4006G R1G
1N4006G R1G
DIODE GEN PURP 800V 1A DO204AL
1N4007G R1G
1N4007G R1G
DIODE GEN PURP 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4004GHA0G
1N4004GHA0G
DIODE GEN PURP 400V 1A DO204AL
1N4003G B0G
1N4003G B0G
DIODE GEN PURP 200V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL
1N4005GHB0G
1N4005GHB0G
DIODE GEN PURP 600V 1A DO204AL
1N4006G B0G
1N4006G B0G
DIODE GEN PURP 800V 1A DO204AL

Similar Products

Part Number 1N4007G R1G 1N4007GHR1G 1N4006G R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

1.5KE68A R0G
1.5KE68A R0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
BAS40-05 RFG
BAS40-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 40V SOT23
MBR10100CTH
MBR10100CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO220
LL4148 L1G
LL4148 L1G
Taiwan Semiconductor Corporation
DIODE GP 100V 150MA MINIMELF
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZV55C6V2 L0G
BZV55C6V2 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW MINI MELF
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZX84C10 RFG
BZX84C10 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 300MW SOT23
BZX84C22 RFG
BZX84C22 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 22V 300MW SOT23
BZV55C2V4 L1G
BZV55C2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZV55C2V7 L1G
BZV55C2V7 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.7V 500MW MINI MELF
BZX585B8V2 RKG
BZX585B8V2 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 200MW SOD523F