1N4007GHA0G
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Taiwan Semiconductor Corporation 1N4007GHA0G

Manufacturer No:
1N4007GHA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GHA0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4007 series, known for its high current capability and low forward voltage drop. It is widely used in various applications requiring reliable and efficient rectification.

The device features a glass passivated die construction, which enhances its reliability and durability. It is also RoHS compliant, ensuring it meets environmental standards. The 1N4007GHA0G is packaged in a DO-204AL (DO-41) case, making it suitable for through-hole mounting.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 1000 V
Maximum DC Blocking Voltage (VR) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) - 8.3 ms single half sine-wave 30 A
Maximum Instantaneous Forward Voltage (VF) @ IF = 1 A 1.1 V
Maximum DC Reverse Current (IR) @ VR = 1000 V 5.0 μA
Operating Junction Temperature Range -55°C to +150°C °C
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole
Junction Capacitance @ VR = 4 V, f = 1 MHz 10 pF

Key Features

  • Glass Passivated Die Construction: Enhances reliability and durability.
  • High Current Capability: Supports up to 1 A of average forward rectified current.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1 A.
  • Surge Overload Rating: Can handle peak forward surge currents up to 30 A for 8.3 ms.
  • RoHS Compliant: Lead-free finish, meeting environmental standards.
  • Through-Hole Mounting: Packaged in DO-204AL (DO-41) case for easy integration.
  • Wide Operating Temperature Range: From -55°C to +150°C.

Applications

The 1N4007GHA0G is suitable for a variety of applications, including:

  • General Purpose Rectification: Ideal for power supplies, inverters, and converters.
  • Freewheeling Diodes: Used in applications requiring protection against back EMF.
  • Bridge Rectifiers: Can be used in bridge rectifier configurations for AC-DC conversion.
  • Surge Protection: Its high surge current rating makes it suitable for protecting circuits from transient voltages.

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the 1N4007GHA0G?

    The peak repetitive reverse voltage (VRRM) is 1000 V.

  2. What is the maximum average forward rectified current (IF(AV)) of the 1N4007GHA0G?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the maximum instantaneous forward voltage (VF) at 1 A?

    The maximum instantaneous forward voltage (VF) at 1 A is 1.1 V.

  4. Is the 1N4007GHA0G RoHS compliant?

    Yes, the 1N4007GHA0G is RoHS compliant with a lead-free finish.

  5. What is the operating junction temperature range of the 1N4007GHA0G?

    The operating junction temperature range is from -55°C to +150°C.

  6. What type of package does the 1N4007GHA0G come in?

    The 1N4007GHA0G comes in a DO-204AL (DO-41) package.

  7. What is the maximum DC reverse current (IR) at 1000 V?

    The maximum DC reverse current (IR) at 1000 V is 5.0 μA.

  8. What is the junction capacitance at 4 V and 1 MHz?

    The junction capacitance at 4 V and 1 MHz is 10 pF.

  9. Can the 1N4007GHA0G be used in bridge rectifier applications?

    Yes, the 1N4007GHA0G can be used in bridge rectifier configurations.

  10. What is the typical thermal resistance (RθJA) of the 1N4007GHA0G?

    The typical thermal resistance (RθJA) is 50 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N4007GHA0G 1N4007GHB0G 1N4006GHA0G 1N4007G A0G 1N4007GH A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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