1N4007GHA0G
  • Share:

Taiwan Semiconductor Corporation 1N4007GHA0G

Manufacturer No:
1N4007GHA0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GHA0G is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N4007 series, known for its high current capability and low forward voltage drop. It is widely used in various applications requiring reliable and efficient rectification.

The device features a glass passivated die construction, which enhances its reliability and durability. It is also RoHS compliant, ensuring it meets environmental standards. The 1N4007GHA0G is packaged in a DO-204AL (DO-41) case, making it suitable for through-hole mounting.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 1000 V
Maximum DC Blocking Voltage (VR) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) - 8.3 ms single half sine-wave 30 A
Maximum Instantaneous Forward Voltage (VF) @ IF = 1 A 1.1 V
Maximum DC Reverse Current (IR) @ VR = 1000 V 5.0 μA
Operating Junction Temperature Range -55°C to +150°C °C
Package / Case DO-204AL (DO-41), Axial
Mounting Type Through Hole
Junction Capacitance @ VR = 4 V, f = 1 MHz 10 pF

Key Features

  • Glass Passivated Die Construction: Enhances reliability and durability.
  • High Current Capability: Supports up to 1 A of average forward rectified current.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1 A.
  • Surge Overload Rating: Can handle peak forward surge currents up to 30 A for 8.3 ms.
  • RoHS Compliant: Lead-free finish, meeting environmental standards.
  • Through-Hole Mounting: Packaged in DO-204AL (DO-41) case for easy integration.
  • Wide Operating Temperature Range: From -55°C to +150°C.

Applications

The 1N4007GHA0G is suitable for a variety of applications, including:

  • General Purpose Rectification: Ideal for power supplies, inverters, and converters.
  • Freewheeling Diodes: Used in applications requiring protection against back EMF.
  • Bridge Rectifiers: Can be used in bridge rectifier configurations for AC-DC conversion.
  • Surge Protection: Its high surge current rating makes it suitable for protecting circuits from transient voltages.

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the 1N4007GHA0G?

    The peak repetitive reverse voltage (VRRM) is 1000 V.

  2. What is the maximum average forward rectified current (IF(AV)) of the 1N4007GHA0G?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the maximum instantaneous forward voltage (VF) at 1 A?

    The maximum instantaneous forward voltage (VF) at 1 A is 1.1 V.

  4. Is the 1N4007GHA0G RoHS compliant?

    Yes, the 1N4007GHA0G is RoHS compliant with a lead-free finish.

  5. What is the operating junction temperature range of the 1N4007GHA0G?

    The operating junction temperature range is from -55°C to +150°C.

  6. What type of package does the 1N4007GHA0G come in?

    The 1N4007GHA0G comes in a DO-204AL (DO-41) package.

  7. What is the maximum DC reverse current (IR) at 1000 V?

    The maximum DC reverse current (IR) at 1000 V is 5.0 μA.

  8. What is the junction capacitance at 4 V and 1 MHz?

    The junction capacitance at 4 V and 1 MHz is 10 pF.

  9. Can the 1N4007GHA0G be used in bridge rectifier applications?

    Yes, the 1N4007GHA0G can be used in bridge rectifier configurations.

  10. What is the typical thermal resistance (RθJA) of the 1N4007GHA0G?

    The typical thermal resistance (RθJA) is 50 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
439

Please send RFQ , we will respond immediately.

Same Series
1N4001G R0G
1N4001G R0G
DIODE GEN PURP 50V 1A DO204AL
1N4003GHR1G
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4007GHR1G
1N4007GHR1G
DIODE GEN PURP 1A DO204AL
1N4001GHR0G
1N4001GHR0G
DIODE GEN PURP 50V 1A DO204AL
1N4002GHR0G
1N4002GHR0G
DIODE GEN PURP 100V 1A DO204AL
1N4001GHA0G
1N4001GHA0G
DIODE GEN PURP 50V 1A DO204AL
1N4003G A0G
1N4003G A0G
DIODE GEN PURP 200V 1A DO204AL
1N4004GHA0G
1N4004GHA0G
DIODE GEN PURP 400V 1A DO204AL
1N4006G A0G
1N4006G A0G
DIODE GEN PURP 800V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL
1N4006G B0G
1N4006G B0G
DIODE GEN PURP 800V 1A DO204AL
1N4006GHB0G
1N4006GHB0G
DIODE GEN PURP 800V 1A DO204AL

Similar Products

Part Number 1N4007GHA0G 1N4007GHB0G 1N4006GHA0G 1N4007G A0G 1N4007GH A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Discontinued at Digi-Key Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

SMBJ5.0CA M4G
SMBJ5.0CA M4G
Taiwan Semiconductor Corporation
TVS DIODE 5VWM 9.2VC DO214AA
MURF1620CTHC0G
MURF1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V ITO-220AB
BAV21W RHG
BAV21W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD123
MUR120S R5G
MUR120S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
BAS85 L0G
BAS85 L0G
Taiwan Semiconductor Corporation
DIODE SCHTKY 30V 200MA MINI MELF
MUR420SHR7G
MUR420SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR160AHA0G
MUR160AHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5406GHB0G
1N5406GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
BZV55C12 L1G
BZV55C12 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B3V3 L1G
BZV55B3V3 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW MINI MELF
BZV55C10 L1G
BZV55C10 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BC807-40W RFG
BC807-40W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323