1N4004GHR1G
  • Share:

Taiwan Semiconductor Corporation 1N4004GHR1G

Manufacturer No:
1N4004GHR1G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GHR1G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical and electronic applications. It is designed to handle high current and voltage requirements, making it suitable for a wide range of uses.

Key Specifications

Characteristic Symbol 1N4004GHR1G Unit
Peak Repetitive Reverse Voltage VRRM 400 V
Working Peak Reverse Voltage VRWM 400 V
RMS Reverse Voltage VR(RMS) 280 V
Average Rectified Output Current @ TA = 75°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current IFSM 30 A
Forward Voltage @ IF = 1.0A VFM 1.0 V
Peak Reverse Current @ TA = 25°C at Rated DC Blocking Voltage @ TA = 125°C IRM 5.0 µA µA
Typical Reverse Recovery Time trr 2.0 µs µs
Typical Total Capacitance CT 8.0 pF pF
Typical Thermal Resistance Junction to Ambient RθJA 100 °C/W °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +175 °C °C

Key Features

  • High Current Capability: The 1N4004GHR1G can handle up to 1.0 A of average rectified output current.
  • Low Forward Voltage Drop: It features a low forward voltage drop of 1.0 V at 1.0 A, reducing power losses.
  • Surge Overload Rating: The diode has a non-repetitive peak forward surge current rating of 30 A.
  • Lead Free and RoHS Compliant: The diode is lead-free and compliant with the EU Directive 2002/95/EC (RoHS).
  • High Reliability: Constructed with glass passivated die, ensuring high reliability and durability.

Applications

  • Power Supplies: Suitable for use in various power supply circuits due to its high voltage and current handling capabilities.
  • Rectifier Circuits: Ideal for half-wave and full-wave rectifier circuits.
  • Automotive Systems: Can be used in automotive electrical systems where high reliability is crucial.
  • Consumer Electronics: Used in a variety of consumer electronic devices requiring rectification and voltage regulation.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4004GHR1G diode?

    The peak repetitive reverse voltage is 400 V.

  2. What is the average rectified output current of the 1N4004GHR1G at 75°C?

    The average rectified output current is 1.0 A.

  3. What is the non-repetitive peak forward surge current rating of the 1N4004GHR1G?

    The non-repetitive peak forward surge current rating is 30 A.

  4. Is the 1N4004GHR1G diode RoHS compliant?
  5. What is the typical reverse recovery time of the 1N4004GHR1G diode?

    The typical reverse recovery time is 2.0 µs.

  6. What is the operating temperature range of the 1N4004GHR1G diode?

    The operating temperature range is -65 to +175 °C.

  7. Can the 1N4004GHR1G be used in automotive systems?
  8. What is the forward voltage drop of the 1N4004GHR1G diode at 1.0 A?

    The forward voltage drop is 1.0 V at 1.0 A.

  9. Is the 1N4004GHR1G suitable for use in power supplies?
  10. What is the typical thermal resistance junction to ambient of the 1N4004GHR1G diode?

    The typical thermal resistance junction to ambient is 100 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
149

Please send RFQ , we will respond immediately.

Same Series
1N4007G A0G
1N4007G A0G
DIODE GEN PURP 1KV 1A DO204AL
1N4005G A0G
1N4005G A0G
DIODE GEN PURP 600V 1A DO204AL
1N4003GHR1G
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL
1N4004GHR1G
1N4004GHR1G
DIODE GEN PURP 400V 1A DO204AL
1N4002G R0G
1N4002G R0G
DIODE GEN PURP 100V 1A DO204AL
1N4003G R0G
1N4003G R0G
DIODE GEN PURP 200V 1A DO204AL
1N4004G A0G
1N4004G A0G
DIODE GEN PURP 400V 1A DO204AL
1N4004GHA0G
1N4004GHA0G
DIODE GEN PURP 400V 1A DO204AL
1N4007GHA0G
1N4007GHA0G
DIODE GEN PURP 1A DO204AL
1N4003G B0G
1N4003G B0G
DIODE GEN PURP 200V 1A DO204AL
1N4004G B0G
1N4004G B0G
DIODE GEN PURP 400V 1A DO204AL
1N4005G B0G
1N4005G B0G
DIODE GEN PURP 600V 1A DO204AL

Similar Products

Part Number 1N4004GHR1G 1N4005GHR1G 1N4003GHR1G 1N4004G R1G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Discontinued at Digi-Key Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz 10pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC

Related Product By Brand

BAT54C RFG
BAT54C RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT23
BAS70-05 RFG
BAS70-05 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
1N4148WS-G RVG
1N4148WS-G RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323
1N5406G A0G
1N5406G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR460
MUR460
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZX84C4V3 RFG
BZX84C4V3 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 4.3V 300MW SOT23
BZV55B8V2 L1G
BZV55B8V2 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW MINI MELF
BZV55C5V6 L1G
BZV55C5V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZX55C5V6 A0G
BZX55C5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BZX79C5V1 A0G
BZX79C5V1 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW DO35