1N4007GH
  • Share:

Taiwan Semiconductor Corporation 1N4007GH

Manufacturer No:
1N4007GH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GH diode, manufactured by Taiwan Semiconductor Corporation, is a general-purpose rectifier diode designed for a wide range of applications. It belongs to the 1N400x series, which includes diodes with varying voltage ratings. The 1N4007GH is specifically rated for a maximum peak repetitive reverse voltage of 1000 volts and an average rectified forward current of 1 ampere. This diode is widely used in electronic circuits for rectification, converting alternating current (AC) to direct current (DC), and is essential in various power supply systems and industrial processes.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 1000 V
Working Peak Reverse Voltage VRWM 1000 V
Average Rectified Output Current IO 1.0 A
Non-Repetitive Peak Forward Surge Current IFSM 30 A
Forward Voltage @ IF = 1.0A VFM 1.0 V
Peak Reverse Current @ TA = +25°C at Rated DC Blocking Voltage IRM 5.0 μA
Typical Junction Capacitance Cj 10 pF @ 4V, 1MHz
Thermal Resistance Junction to Ambient RθJA 100 k/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Package DO-204AL (DO-41)
Mounting Type Through Hole

Key Features

  • High Current Capability and Low-Forward Voltage Drop: The diode can handle an average rectified forward current of 1 ampere and has a low forward voltage drop of 1.0V at 1A.
  • Surge Overload Rating: It has a non-repetitive peak forward surge current rating of 30A for 8.3ms single half sine-wave.
  • Low Reverse Leakage Current: The diode has a low reverse leakage current of 5.0 μA at +25°C at the rated DC blocking voltage.
  • Lead-Free Finish and RoHS Compliant: The diode is lead-free and compliant with the EU’s Restriction of Hazardous Substances Directive (RoHS).
  • Wide Operating Temperature Range: The diode operates over a temperature range of -65 to +150 °C.

Applications

The 1N4007GH diode is used in a variety of applications, including:

  • DC Power Supplies: Essential for converting AC power to DC in electronic devices, household appliances, and industrial machinery.
  • Battery Charging Systems: Used in charging systems for electric vehicles, laptops, smartphones, and other portable devices.
  • Industrial Processes: Applied in processes requiring controlled DC voltage, such as electroplating, welding, and electrolysis.
  • Rectification Circuits: Commonly used in rectification circuits to convert AC to DC in various electronic systems.

Q & A

  1. What is the maximum peak repetitive reverse voltage of the 1N4007GH diode?

    The maximum peak repetitive reverse voltage is 1000 volts.

  2. What is the average rectified forward current of the 1N4007GH diode?

    The average rectified forward current is 1 ampere.

  3. What is the forward voltage drop of the 1N4007GH diode at 1A?

    The forward voltage drop is 1.0V at 1A.

  4. What is the non-repetitive peak forward surge current rating of the 1N4007GH diode?

    The non-repetitive peak forward surge current rating is 30A for 8.3ms single half sine-wave.

  5. Is the 1N4007GH diode lead-free and RoHS compliant?

    Yes, the diode is lead-free and compliant with the EU’s Restriction of Hazardous Substances Directive (RoHS).

  6. What is the operating temperature range of the 1N4007GH diode?

    The operating temperature range is -65 to +150 °C.

  7. What type of package does the 1N4007GH diode come in?

    The diode comes in a DO-204AL (DO-41) package.

  8. What are some common applications of the 1N4007GH diode?

    Common applications include DC power supplies, battery charging systems, industrial processes, and rectification circuits.

  9. What is the typical junction capacitance of the 1N4007GH diode?

    The typical junction capacitance is 10 pF at 4V, 1MHz.

  10. What is the thermal resistance junction to ambient of the 1N4007GH diode?

    The thermal resistance junction to ambient is 100 k/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.05
18,114

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 1N4007GH 1N4007GP 1N4006GH 1N4007G
Manufacturer Taiwan Semiconductor Corporation Diotec Semiconductor Taiwan Semiconductor Corporation SMC Diode Solutions
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - 1.5 µs - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1 kV 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz - 10pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AC, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-41/DO-204AC DO-204AL (DO-41) DO-41
Operating Temperature - Junction -55°C ~ 150°C -50°C ~ 175°C -55°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK

Related Product By Brand

BAT54T REG
BAT54T REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
1N4148W-G RHG
1N4148W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
1N4001GHR1G
1N4001GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
MUR420SHR7G
MUR420SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
BAT43X RSG
BAT43X RSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD523F
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR160AHB0G
MUR160AHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT42 R0
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZX55C3V3 A0G
BZX55C3V3 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW DO35
BZX55C8V2 A0G
BZX55C8V2 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW DO35
BC857C RFG
BC857C RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23