1N4007GH
  • Share:

Taiwan Semiconductor Corporation 1N4007GH

Manufacturer No:
1N4007GH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GH diode, manufactured by Taiwan Semiconductor Corporation, is a general-purpose rectifier diode designed for a wide range of applications. It belongs to the 1N400x series, which includes diodes with varying voltage ratings. The 1N4007GH is specifically rated for a maximum peak repetitive reverse voltage of 1000 volts and an average rectified forward current of 1 ampere. This diode is widely used in electronic circuits for rectification, converting alternating current (AC) to direct current (DC), and is essential in various power supply systems and industrial processes.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 1000 V
Working Peak Reverse Voltage VRWM 1000 V
Average Rectified Output Current IO 1.0 A
Non-Repetitive Peak Forward Surge Current IFSM 30 A
Forward Voltage @ IF = 1.0A VFM 1.0 V
Peak Reverse Current @ TA = +25°C at Rated DC Blocking Voltage IRM 5.0 μA
Typical Junction Capacitance Cj 10 pF @ 4V, 1MHz
Thermal Resistance Junction to Ambient RθJA 100 k/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Package DO-204AL (DO-41)
Mounting Type Through Hole

Key Features

  • High Current Capability and Low-Forward Voltage Drop: The diode can handle an average rectified forward current of 1 ampere and has a low forward voltage drop of 1.0V at 1A.
  • Surge Overload Rating: It has a non-repetitive peak forward surge current rating of 30A for 8.3ms single half sine-wave.
  • Low Reverse Leakage Current: The diode has a low reverse leakage current of 5.0 μA at +25°C at the rated DC blocking voltage.
  • Lead-Free Finish and RoHS Compliant: The diode is lead-free and compliant with the EU’s Restriction of Hazardous Substances Directive (RoHS).
  • Wide Operating Temperature Range: The diode operates over a temperature range of -65 to +150 °C.

Applications

The 1N4007GH diode is used in a variety of applications, including:

  • DC Power Supplies: Essential for converting AC power to DC in electronic devices, household appliances, and industrial machinery.
  • Battery Charging Systems: Used in charging systems for electric vehicles, laptops, smartphones, and other portable devices.
  • Industrial Processes: Applied in processes requiring controlled DC voltage, such as electroplating, welding, and electrolysis.
  • Rectification Circuits: Commonly used in rectification circuits to convert AC to DC in various electronic systems.

Q & A

  1. What is the maximum peak repetitive reverse voltage of the 1N4007GH diode?

    The maximum peak repetitive reverse voltage is 1000 volts.

  2. What is the average rectified forward current of the 1N4007GH diode?

    The average rectified forward current is 1 ampere.

  3. What is the forward voltage drop of the 1N4007GH diode at 1A?

    The forward voltage drop is 1.0V at 1A.

  4. What is the non-repetitive peak forward surge current rating of the 1N4007GH diode?

    The non-repetitive peak forward surge current rating is 30A for 8.3ms single half sine-wave.

  5. Is the 1N4007GH diode lead-free and RoHS compliant?

    Yes, the diode is lead-free and compliant with the EU’s Restriction of Hazardous Substances Directive (RoHS).

  6. What is the operating temperature range of the 1N4007GH diode?

    The operating temperature range is -65 to +150 °C.

  7. What type of package does the 1N4007GH diode come in?

    The diode comes in a DO-204AL (DO-41) package.

  8. What are some common applications of the 1N4007GH diode?

    Common applications include DC power supplies, battery charging systems, industrial processes, and rectification circuits.

  9. What is the typical junction capacitance of the 1N4007GH diode?

    The typical junction capacitance is 10 pF at 4V, 1MHz.

  10. What is the thermal resistance junction to ambient of the 1N4007GH diode?

    The thermal resistance junction to ambient is 100 k/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.05
18,114

Please send RFQ , we will respond immediately.

Same Series
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 1N4007GH 1N4007GP 1N4006GH 1N4007G
Manufacturer Taiwan Semiconductor Corporation Diotec Semiconductor Taiwan Semiconductor Corporation SMC Diode Solutions
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - 1.5 µs - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1 kV 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 10pF @ 4V, 1MHz - 10pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AC, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-41/DO-204AC DO-204AL (DO-41) DO-41
Operating Temperature - Junction -55°C ~ 150°C -50°C ~ 175°C -55°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

BAV99W RVG
BAV99W RVG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT323
MBR10100CTH
MBR10100CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO220
1N4001GHR1G
1N4001GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160HB0G
MUR160HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BZX84C3V0 RFG
BZX84C3V0 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3V 300MW SOT23
BZV55B30 L0G
BZV55B30 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZX585B6V8 RSG
BZX585B6V8 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BZV55B16 L1G
BZV55B16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C6V8 L1G
BZV55C6V8 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW MINI MELF
BZV55C9V1 L1G
BZV55C9V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 9.1V 500MW MINI MELF
BZX55C10 A0G
BZX55C10 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW DO35