LL4148 L0G
  • Share:

Taiwan Semiconductor Corporation LL4148 L0G

Manufacturer No:
LL4148 L0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GP 75V 150MA MINIMELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The LL4148 L0G is a high-speed switching diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for small signal switching applications and is known for its low power loss and high efficiency. It is packaged in a Mini-MELF (Micro-Miniature Electronic) format, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterSymbolMinMaxUnit
Reverse Breakdown VoltageVBR75-V
Forward VoltageVF-1V
Forward CurrentIF-150mA
Reverse Current @ Rated VRIR-5µA
Junction CapacitanceCJ-4pF
Reverse Recovery Timetrr-4ns
Junction Temperature RangeTJ-65175°C
Storage Temperature RangeTSTG-65175°C
Non-repetitive Peak Forward Surge Current (t = 1µs)IFSM-4.0A

Key Features

  • Low power loss and high efficiency
  • High-speed switching capability with a reverse recovery time of 4 ns
  • Mini-MELF package for compact designs
  • Wide junction temperature range from -65°C to +175°C
  • Low forward voltage drop of 1 V at 50 mA
  • High reverse breakdown voltage of 75 V

Applications

The LL4148 L0G diode is suitable for various small signal switching applications, including:

  • High-frequency switching circuits
  • Audio and video signal processing
  • Automotive electronics
  • Consumer electronics
  • Industrial control systems

Q & A

  1. What is the maximum forward current of the LL4148 L0G diode?
    The maximum forward current is 150 mA.
  2. What is the reverse breakdown voltage of the LL4148 L0G diode?
    The reverse breakdown voltage is 75 V.
  3. What is the typical forward voltage drop at 50 mA?
    The typical forward voltage drop at 50 mA is 1 V.
  4. What is the reverse recovery time of the LL4148 L0G diode?
    The reverse recovery time is 4 ns.
  5. What is the junction temperature range of the LL4148 L0G diode?
    The junction temperature range is from -65°C to +175°C.
  6. What is the storage temperature range of the LL4148 L0G diode?
    The storage temperature range is from -65°C to +175°C.
  7. What package type is used for the LL4148 L0G diode?
    The LL4148 L0G diode is packaged in a Mini-MELF format.
  8. Is the LL4148 L0G diode RoHS compliant?
    Yes, the LL4148 L0G diode is RoHS compliant.
  9. What are some common applications of the LL4148 L0G diode?
    Common applications include high-frequency switching circuits, audio and video signal processing, automotive electronics, consumer electronics, and industrial control systems.
  10. What is the non-repetitive peak forward surge current of the LL4148 L0G diode for a pulse width of 1 µs?
    The non-repetitive peak forward surge current for a pulse width of 1 µs is 4.0 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 50 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.02
8,498

Please send RFQ , we will respond immediately.

Same Series
LL4448 L1G
LL4448 L1G
DIODE GP 75V 150MA MINIMELF
LL4148 L0G
LL4148 L0G
DIODE GP 75V 150MA MINIMELF
LL4448 L0G
LL4448 L0G
DIODE GP 75V 150MA MINIMELF

Similar Products

Part Number LL4148 L0G LL4148 L1G LL4448 L0G LS4148 L0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 100 V 75 V 75 V
Current - Average Rectified (Io) 150mA 150mA 150mA 450mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 50 mA 1 V @ 50 mA 1 V @ 100 mA 1 V @ 450 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 54 ns 4 ns -
Current - Reverse Leakage @ Vr 5 µA @ 75 V 5 µA @ 75 V 5 µA @ 75 V 5 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 SOD-80 Variant
Supplier Device Package Mini MELF Mini MELF Mini MELF Mini MELF
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

1.5KE120AHB0G
1.5KE120AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
1N4148WS-G RVG
1N4148WS-G RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323
MUR420 A0G
MUR420 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
MUR160A B0G
MUR160A B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BZV55C10 L0G
BZV55C10 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW MINI MELF
BZV55B16 L0G
BZV55B16 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55C36 L1G
BZV55C36 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 36V 500MW MINI MELF
BZV55C5V1 L1G
BZV55C5V1 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 500MW MINI MELF
BZX79B5V6 A0G
BZX79B5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35
BZX79C5V6 A0G
BZX79C5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35