LL4148 L0G
  • Share:

Taiwan Semiconductor Corporation LL4148 L0G

Manufacturer No:
LL4148 L0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GP 75V 150MA MINIMELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The LL4148 L0G is a high-speed switching diode manufactured by Taiwan Semiconductor Corporation. This diode is designed for small signal switching applications and is known for its low power loss and high efficiency. It is packaged in a Mini-MELF (Micro-Miniature Electronic) format, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterSymbolMinMaxUnit
Reverse Breakdown VoltageVBR75-V
Forward VoltageVF-1V
Forward CurrentIF-150mA
Reverse Current @ Rated VRIR-5µA
Junction CapacitanceCJ-4pF
Reverse Recovery Timetrr-4ns
Junction Temperature RangeTJ-65175°C
Storage Temperature RangeTSTG-65175°C
Non-repetitive Peak Forward Surge Current (t = 1µs)IFSM-4.0A

Key Features

  • Low power loss and high efficiency
  • High-speed switching capability with a reverse recovery time of 4 ns
  • Mini-MELF package for compact designs
  • Wide junction temperature range from -65°C to +175°C
  • Low forward voltage drop of 1 V at 50 mA
  • High reverse breakdown voltage of 75 V

Applications

The LL4148 L0G diode is suitable for various small signal switching applications, including:

  • High-frequency switching circuits
  • Audio and video signal processing
  • Automotive electronics
  • Consumer electronics
  • Industrial control systems

Q & A

  1. What is the maximum forward current of the LL4148 L0G diode?
    The maximum forward current is 150 mA.
  2. What is the reverse breakdown voltage of the LL4148 L0G diode?
    The reverse breakdown voltage is 75 V.
  3. What is the typical forward voltage drop at 50 mA?
    The typical forward voltage drop at 50 mA is 1 V.
  4. What is the reverse recovery time of the LL4148 L0G diode?
    The reverse recovery time is 4 ns.
  5. What is the junction temperature range of the LL4148 L0G diode?
    The junction temperature range is from -65°C to +175°C.
  6. What is the storage temperature range of the LL4148 L0G diode?
    The storage temperature range is from -65°C to +175°C.
  7. What package type is used for the LL4148 L0G diode?
    The LL4148 L0G diode is packaged in a Mini-MELF format.
  8. Is the LL4148 L0G diode RoHS compliant?
    Yes, the LL4148 L0G diode is RoHS compliant.
  9. What are some common applications of the LL4148 L0G diode?
    Common applications include high-frequency switching circuits, audio and video signal processing, automotive electronics, consumer electronics, and industrial control systems.
  10. What is the non-repetitive peak forward surge current of the LL4148 L0G diode for a pulse width of 1 µs?
    The non-repetitive peak forward surge current for a pulse width of 1 µs is 4.0 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 50 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.02
8,498

Please send RFQ , we will respond immediately.

Same Series
LL4448 L1G
LL4448 L1G
DIODE GP 75V 150MA MINIMELF
LL4148 L0G
LL4148 L0G
DIODE GP 75V 150MA MINIMELF
LL4448 L0G
LL4448 L0G
DIODE GP 75V 150MA MINIMELF

Similar Products

Part Number LL4148 L0G LL4148 L1G LL4448 L0G LS4148 L0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 100 V 75 V 75 V
Current - Average Rectified (Io) 150mA 150mA 150mA 450mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 50 mA 1 V @ 50 mA 1 V @ 100 mA 1 V @ 450 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 54 ns 4 ns -
Current - Reverse Leakage @ Vr 5 µA @ 75 V 5 µA @ 75 V 5 µA @ 75 V 5 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 SOD-80 Variant
Supplier Device Package Mini MELF Mini MELF Mini MELF Mini MELF
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

MUR420 A0G
MUR420 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BAT42W RHG
BAT42W RHG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD123
1N4937G A0G
1N4937G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR820 C0G
MUR820 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 8A TO220AC
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55B12 L0G
BZV55B12 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55B3V9 L0G
BZV55B3V9 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55B5V6 L1G
BZV55B5V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZX55C8V2 A0G
BZX55C8V2 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 8.2V 500MW DO35
BZX79B3V6 A0G
BZX79B3V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW DO35
BZX79C5V6 A0G
BZX79C5V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW DO35