BAS85-L0 L0G
  • Share:

Taiwan Semiconductor Corporation BAS85-L0 L0G

Manufacturer No:
BAS85-L0 L0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY MINIMELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS85-L0 L0G is a Schottky diode produced by Taiwan Semiconductor Corporation. This component is designed for high-efficiency rectification and switching applications. It features a mini-MELF (Metal Electrode Leadless Face) package, which is compact and suitable for surface mount technology. The BAS85-L0 L0G is characterized by its low forward voltage drop, high switching speed, and low reverse leakage current, making it an ideal choice for various electronic circuits requiring fast and efficient diode performance.

Key Specifications

Parameter Description
Voltage - DC Reverse (Vr) (Max) 30 V
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA
Current - Average Rectified (Io) 200 mA
Peak Forward Surge Current (IFSM) 4 A
Reverse Recovery Time (trr) 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V
Capacitance @ Vr, F 10 pF @ 1 V, 1 MHz
Operating Temperature - Junction -65°C to +125°C
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
RoHS Status ROHS3 Compliant

Key Features

  • Low Forward Voltage Drop: The BAS85-L0 L0G has a low forward voltage drop of up to 800 mV at 100 mA, which reduces power losses in the circuit.
  • High Switching Speed: With a reverse recovery time of 5 ns, this diode is suitable for high-frequency applications.
  • Low Reverse Leakage Current: The diode has a low reverse leakage current of 2 µA at 25 V, minimizing current losses in the reverse bias condition.
  • Compact Package: The mini-MELF package is designed for surface mount technology, making it ideal for space-constrained designs.
  • Wide Operating Temperature Range: The diode can operate over a temperature range of -65°C to +125°C, making it suitable for various environmental conditions.

Applications

  • Power Supplies: Used in rectifier circuits and switching power supplies due to its high efficiency and fast switching capabilities.
  • Audio and Video Equipment: Suitable for use in audio and video circuits where low noise and high frequency response are required.
  • Automotive Electronics: Can be used in automotive systems due to its robustness and wide operating temperature range.
  • Industrial Control Systems: Used in various industrial control circuits where reliability and efficiency are critical.

Q & A

  1. Q: What is the maximum DC reverse voltage of the BAS85-L0 L0G?
    A: The maximum DC reverse voltage is 30 V.
  2. Q: What is the forward voltage drop at 100 mA for the BAS85-L0 L0G?
    A: The forward voltage drop at 100 mA is 800 mV.
  3. Q: What is the reverse recovery time of the BAS85-L0 L0G?
    A: The reverse recovery time is 5 ns.
  4. Q: What is the package type of the BAS85-L0 L0G?
    A: The package type is DO-213AC, MINI-MELF, SOD-80.
  5. Q: Is the BAS85-L0 L0G RoHS compliant?
    A: Yes, the BAS85-L0 L0G is ROHS3 compliant.
  6. Q: What is the operating temperature range of the BAS85-L0 L0G?
    A: The operating temperature range is -65°C to +125°C.
  7. Q: What is the average rectified current rating of the BAS85-L0 L0G?
    A: The average rectified current rating is 200 mA.
  8. Q: What is the peak forward surge current rating of the BAS85-L0 L0G?
    A: The peak forward surge current rating is 4 A.
  9. Q: How can I obtain detailed information about the BAS85-L0 L0G, such as application notes and factory information?
    A: You can download the datasheet from the manufacturer's website or contact the supplier for additional information.
  10. Q: What is the warranty period for the BAS85-L0 L0G if purchased from Ovaga?
    A: Ovaga offers a 1-year warranty on the BAS85-L0 L0G.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

-
306

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY

Related Product By Brand

BAT54BR-G REG
BAT54BR-G REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
MBR10100CTH
MBR10100CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 100V TO220
MUR160S R5G
MUR160S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
BAT54W RVG
BAT54W RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT-323
MUR160 B0G
MUR160 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BZV55C27 L0G
BZV55C27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZX84C10 RFG
BZX84C10 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 300MW SOT23
BZV55B3V0 L1G
BZV55B3V0 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3V 500MW MINI MELF
BZX55C10 A0G
BZX55C10 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 10V 500MW DO35
BC817-16 RFG
BC817-16 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
BC847AW RFG
BC847AW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323