BAS85-L0 L0G
  • Share:

Taiwan Semiconductor Corporation BAS85-L0 L0G

Manufacturer No:
BAS85-L0 L0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY MINIMELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS85-L0 L0G is a Schottky diode produced by Taiwan Semiconductor Corporation. This component is designed for high-efficiency rectification and switching applications. It features a mini-MELF (Metal Electrode Leadless Face) package, which is compact and suitable for surface mount technology. The BAS85-L0 L0G is characterized by its low forward voltage drop, high switching speed, and low reverse leakage current, making it an ideal choice for various electronic circuits requiring fast and efficient diode performance.

Key Specifications

Parameter Description
Voltage - DC Reverse (Vr) (Max) 30 V
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA
Current - Average Rectified (Io) 200 mA
Peak Forward Surge Current (IFSM) 4 A
Reverse Recovery Time (trr) 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V
Capacitance @ Vr, F 10 pF @ 1 V, 1 MHz
Operating Temperature - Junction -65°C to +125°C
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
RoHS Status ROHS3 Compliant

Key Features

  • Low Forward Voltage Drop: The BAS85-L0 L0G has a low forward voltage drop of up to 800 mV at 100 mA, which reduces power losses in the circuit.
  • High Switching Speed: With a reverse recovery time of 5 ns, this diode is suitable for high-frequency applications.
  • Low Reverse Leakage Current: The diode has a low reverse leakage current of 2 µA at 25 V, minimizing current losses in the reverse bias condition.
  • Compact Package: The mini-MELF package is designed for surface mount technology, making it ideal for space-constrained designs.
  • Wide Operating Temperature Range: The diode can operate over a temperature range of -65°C to +125°C, making it suitable for various environmental conditions.

Applications

  • Power Supplies: Used in rectifier circuits and switching power supplies due to its high efficiency and fast switching capabilities.
  • Audio and Video Equipment: Suitable for use in audio and video circuits where low noise and high frequency response are required.
  • Automotive Electronics: Can be used in automotive systems due to its robustness and wide operating temperature range.
  • Industrial Control Systems: Used in various industrial control circuits where reliability and efficiency are critical.

Q & A

  1. Q: What is the maximum DC reverse voltage of the BAS85-L0 L0G?
    A: The maximum DC reverse voltage is 30 V.
  2. Q: What is the forward voltage drop at 100 mA for the BAS85-L0 L0G?
    A: The forward voltage drop at 100 mA is 800 mV.
  3. Q: What is the reverse recovery time of the BAS85-L0 L0G?
    A: The reverse recovery time is 5 ns.
  4. Q: What is the package type of the BAS85-L0 L0G?
    A: The package type is DO-213AC, MINI-MELF, SOD-80.
  5. Q: Is the BAS85-L0 L0G RoHS compliant?
    A: Yes, the BAS85-L0 L0G is ROHS3 compliant.
  6. Q: What is the operating temperature range of the BAS85-L0 L0G?
    A: The operating temperature range is -65°C to +125°C.
  7. Q: What is the average rectified current rating of the BAS85-L0 L0G?
    A: The average rectified current rating is 200 mA.
  8. Q: What is the peak forward surge current rating of the BAS85-L0 L0G?
    A: The peak forward surge current rating is 4 A.
  9. Q: How can I obtain detailed information about the BAS85-L0 L0G, such as application notes and factory information?
    A: You can download the datasheet from the manufacturer's website or contact the supplier for additional information.
  10. Q: What is the warranty period for the BAS85-L0 L0G if purchased from Ovaga?
    A: Ovaga offers a 1-year warranty on the BAS85-L0 L0G.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

-
306

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

SMBJ5.0CAHR5G
SMBJ5.0CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 5VWM 9.2VC DO214AA
1.5KE120AHB0G
1.5KE120AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAV99L
BAV99L
Taiwan Semiconductor Corporation
SOT-23, 70V, 0.2A, SWITCHING DIO
MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
1N4007G B0G
1N4007G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
MUR160HB0G
MUR160HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT43-L0 R0
BAT43-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZX84C7V5 RFG
BZX84C7V5 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 7.5V 300MW SOT23
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23