BAS85-L0 L0G
  • Share:

Taiwan Semiconductor Corporation BAS85-L0 L0G

Manufacturer No:
BAS85-L0 L0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE SCHOTTKY MINIMELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS85-L0 L0G is a Schottky diode produced by Taiwan Semiconductor Corporation. This component is designed for high-efficiency rectification and switching applications. It features a mini-MELF (Metal Electrode Leadless Face) package, which is compact and suitable for surface mount technology. The BAS85-L0 L0G is characterized by its low forward voltage drop, high switching speed, and low reverse leakage current, making it an ideal choice for various electronic circuits requiring fast and efficient diode performance.

Key Specifications

Parameter Description
Voltage - DC Reverse (Vr) (Max) 30 V
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA
Current - Average Rectified (Io) 200 mA
Peak Forward Surge Current (IFSM) 4 A
Reverse Recovery Time (trr) 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V
Capacitance @ Vr, F 10 pF @ 1 V, 1 MHz
Operating Temperature - Junction -65°C to +125°C
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
RoHS Status ROHS3 Compliant

Key Features

  • Low Forward Voltage Drop: The BAS85-L0 L0G has a low forward voltage drop of up to 800 mV at 100 mA, which reduces power losses in the circuit.
  • High Switching Speed: With a reverse recovery time of 5 ns, this diode is suitable for high-frequency applications.
  • Low Reverse Leakage Current: The diode has a low reverse leakage current of 2 µA at 25 V, minimizing current losses in the reverse bias condition.
  • Compact Package: The mini-MELF package is designed for surface mount technology, making it ideal for space-constrained designs.
  • Wide Operating Temperature Range: The diode can operate over a temperature range of -65°C to +125°C, making it suitable for various environmental conditions.

Applications

  • Power Supplies: Used in rectifier circuits and switching power supplies due to its high efficiency and fast switching capabilities.
  • Audio and Video Equipment: Suitable for use in audio and video circuits where low noise and high frequency response are required.
  • Automotive Electronics: Can be used in automotive systems due to its robustness and wide operating temperature range.
  • Industrial Control Systems: Used in various industrial control circuits where reliability and efficiency are critical.

Q & A

  1. Q: What is the maximum DC reverse voltage of the BAS85-L0 L0G?
    A: The maximum DC reverse voltage is 30 V.
  2. Q: What is the forward voltage drop at 100 mA for the BAS85-L0 L0G?
    A: The forward voltage drop at 100 mA is 800 mV.
  3. Q: What is the reverse recovery time of the BAS85-L0 L0G?
    A: The reverse recovery time is 5 ns.
  4. Q: What is the package type of the BAS85-L0 L0G?
    A: The package type is DO-213AC, MINI-MELF, SOD-80.
  5. Q: Is the BAS85-L0 L0G RoHS compliant?
    A: Yes, the BAS85-L0 L0G is ROHS3 compliant.
  6. Q: What is the operating temperature range of the BAS85-L0 L0G?
    A: The operating temperature range is -65°C to +125°C.
  7. Q: What is the average rectified current rating of the BAS85-L0 L0G?
    A: The average rectified current rating is 200 mA.
  8. Q: What is the peak forward surge current rating of the BAS85-L0 L0G?
    A: The peak forward surge current rating is 4 A.
  9. Q: How can I obtain detailed information about the BAS85-L0 L0G, such as application notes and factory information?
    A: You can download the datasheet from the manufacturer's website or contact the supplier for additional information.
  10. Q: What is the warranty period for the BAS85-L0 L0G if purchased from Ovaga?
    A: Ovaga offers a 1-year warranty on the BAS85-L0 L0G.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:Mini MELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

-
306

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

1.5KE6.8A A0G
1.5KE6.8A A0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
MUR460SHR7G
MUR460SHR7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR160A B0G
MUR160A B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BZV55C51 L0G
BZV55C51 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 500MW MINI MELF
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZV55C51 L1G
BZV55C51 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 500MW MINI MELF
BZX84C10 RFG
BZX84C10 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 10V 300MW SOT23
BZV55B30 L1G
BZV55B30 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 30V 500MW MINI MELF
BZV55B5V6 L1G
BZV55B5V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
1N4733G A0G
1N4733G A0G
Taiwan Semiconductor Corporation
DIODE ZENER 5.1V 1W DO204AL
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23