BC817-40W RFG
  • Share:

Taiwan Semiconductor Corporation BC817-40W RFG

Manufacturer No:
BC817-40W RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-40W is a general-purpose NPN transistor manufactured by ON Semiconductor, not Taiwan Semiconductor Corporation, but it is widely available through various distributors. This transistor is housed in the compact SOT323 (SC70) surface-mount device (SMD) package, making it suitable for a wide range of applications where space is limited.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Emitter VoltageVCEO--45V
Collector-Base VoltageVCBO--50V
Emitter-Base VoltageVEBO--5.0V
Continuous Collector CurrentIC--500mA
Base CurrentIB--50mA
Power DissipationPtot--200mW
DC Current Gain (hFE)hFE250-600-
Transition Frequency (fT)fT--100MHz
Operating Junction TemperatureTJ-65-150°C

Key Features

General Purpose NPN Transistor: Suitable for amplification and switching applications.
Compact Package: Housed in the SOT323 (SC70) SMD package, ideal for space-constrained designs.
High Current Capability: Continuous collector current up to 500 mA.
High Voltage Ratings: Collector-Emitter Voltage (VCEO) of 45 V and Collector-Base Voltage (VCBO) of 50 V.
AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly packaging.
High Transition Frequency: Up to 100 MHz, making it suitable for high-frequency applications.

Applications

LED Dimmers or Flashers: Can be used to control LED brightness and flashing patterns.
Switching Applications: Ideal for general-purpose switching due to its high current and voltage ratings.
Preamplifier for Power Amplifier: Can be used as a preamplifier stage in audio or other signal amplification circuits.
High Frequency Switching: Suitable for high-frequency switching applications such as modulators and demodulators for RF frequencies.
Automotive and Industrial Applications: Due to its AEC-Q101 qualification, it is suitable for use in automotive and industrial environments.

Q & A

  1. What is the maximum collector current of the BC817-40W transistor?

    The maximum collector current is 500 mA.

  2. What is the maximum collector-emitter voltage (VCEO) of the BC817-40W transistor?

    The maximum collector-emitter voltage is 45 V.

  3. What package type is the BC817-40W transistor housed in?

    The transistor is housed in the SOT323 (SC70) surface-mount device (SMD) package.

  4. Is the BC817-40W transistor AEC-Q101 qualified?

    Yes, the BC817-40W transistor is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the transition frequency (fT) of the BC817-40W transistor?

    The transition frequency is up to 100 MHz.

  6. What is the operating junction temperature range of the BC817-40W transistor?

    The operating junction temperature range is from -65°C to 150°C.

  7. Is the BC817-40W transistor Pb-Free, Halogen Free/BFR Free, and RoHS Compliant?

    Yes, the transistor meets these environmental standards.

  8. What are some common applications of the BC817-40W transistor?

    Common applications include LED dimmers, switching applications, preamplifiers, high-frequency switching, and automotive/industrial uses.

  9. What is the DC current gain (hFE) range of the BC817-40W transistor?

    The DC current gain (hFE) range is from 250 to 600.

  10. How much power can the BC817-40W transistor dissipate?

    The transistor can dissipate up to 200 mW of power.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.04
24,894

Please send RFQ , we will respond immediately.

Same Series
BC817-16W RFG
BC817-16W RFG
TRANS NPN 45V 0.5A SOT323
BC817-25W RFG
BC817-25W RFG
TRANS NPN 45V 0.5A SOT323

Similar Products

Part Number BC817-40W RFG BC817-40 RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 200 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-23

Related Product By Categories

PMBTA45,215
PMBTA45,215
Nexperia USA Inc.
TRANS NPN 500V 0.15A TO236AB
PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
MJE5852G
MJE5852G
onsemi
TRANS PNP 400V 8A TO220
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
BC846AQB-QZ
BC846AQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3

Related Product By Brand

1.5KE120AHB0G
1.5KE120AHB0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAS316 RRG
BAS316 RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250MA SOD323
MUR420S
MUR420S
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
1N4004G R1G
1N4004G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
1N5406GHB0G
1N5406GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR420HB0G
MUR420HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
BAT43-L0 A0
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT43-L0 A0G
BAT43-L0 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55C12 L1G
BZV55C12 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZX79C3V6 A0G
BZX79C3V6 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW DO35
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23