BC817-40W RFG
  • Share:

Taiwan Semiconductor Corporation BC817-40W RFG

Manufacturer No:
BC817-40W RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-40W is a general-purpose NPN transistor manufactured by ON Semiconductor, not Taiwan Semiconductor Corporation, but it is widely available through various distributors. This transistor is housed in the compact SOT323 (SC70) surface-mount device (SMD) package, making it suitable for a wide range of applications where space is limited.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Emitter VoltageVCEO--45V
Collector-Base VoltageVCBO--50V
Emitter-Base VoltageVEBO--5.0V
Continuous Collector CurrentIC--500mA
Base CurrentIB--50mA
Power DissipationPtot--200mW
DC Current Gain (hFE)hFE250-600-
Transition Frequency (fT)fT--100MHz
Operating Junction TemperatureTJ-65-150°C

Key Features

General Purpose NPN Transistor: Suitable for amplification and switching applications.
Compact Package: Housed in the SOT323 (SC70) SMD package, ideal for space-constrained designs.
High Current Capability: Continuous collector current up to 500 mA.
High Voltage Ratings: Collector-Emitter Voltage (VCEO) of 45 V and Collector-Base Voltage (VCBO) of 50 V.
AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly packaging.
High Transition Frequency: Up to 100 MHz, making it suitable for high-frequency applications.

Applications

LED Dimmers or Flashers: Can be used to control LED brightness and flashing patterns.
Switching Applications: Ideal for general-purpose switching due to its high current and voltage ratings.
Preamplifier for Power Amplifier: Can be used as a preamplifier stage in audio or other signal amplification circuits.
High Frequency Switching: Suitable for high-frequency switching applications such as modulators and demodulators for RF frequencies.
Automotive and Industrial Applications: Due to its AEC-Q101 qualification, it is suitable for use in automotive and industrial environments.

Q & A

  1. What is the maximum collector current of the BC817-40W transistor?

    The maximum collector current is 500 mA.

  2. What is the maximum collector-emitter voltage (VCEO) of the BC817-40W transistor?

    The maximum collector-emitter voltage is 45 V.

  3. What package type is the BC817-40W transistor housed in?

    The transistor is housed in the SOT323 (SC70) surface-mount device (SMD) package.

  4. Is the BC817-40W transistor AEC-Q101 qualified?

    Yes, the BC817-40W transistor is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the transition frequency (fT) of the BC817-40W transistor?

    The transition frequency is up to 100 MHz.

  6. What is the operating junction temperature range of the BC817-40W transistor?

    The operating junction temperature range is from -65°C to 150°C.

  7. Is the BC817-40W transistor Pb-Free, Halogen Free/BFR Free, and RoHS Compliant?

    Yes, the transistor meets these environmental standards.

  8. What are some common applications of the BC817-40W transistor?

    Common applications include LED dimmers, switching applications, preamplifiers, high-frequency switching, and automotive/industrial uses.

  9. What is the DC current gain (hFE) range of the BC817-40W transistor?

    The DC current gain (hFE) range is from 250 to 600.

  10. How much power can the BC817-40W transistor dissipate?

    The transistor can dissipate up to 200 mW of power.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.04
24,894

Please send RFQ , we will respond immediately.

Same Series
BC817-16W RFG
BC817-16W RFG
TRANS NPN 45V 0.5A SOT323
BC817-40W RFG
BC817-40W RFG
TRANS NPN 45V 0.5A SOT323

Similar Products

Part Number BC817-40W RFG BC817-40 RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 200 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-23

Related Product By Categories

PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BC857AMTF
BC857AMTF
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
ST13003N
ST13003N
STMicroelectronics
TRANS NPN 400V 1A SOT32-3
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
MMBT2484
MMBT2484
Fairchild Semiconductor
TRANS NPN 60V 0.1A SOT23-3
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX52-16TF
BCX52-16TF
Nexperia USA Inc.
TRANS PNP 60V 1A SOT89
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA

Related Product By Brand

1.5KE120A B0G
1.5KE120A B0G
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAV70 RFG
BAV70 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR160S
MUR160S
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MUR160HB0G
MUR160HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
MUR460S R7
MUR460S R7
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZV55C22 L0G
BZV55C22 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 22V 500MW MINI MELF
BZV55B5V6 L1G
BZV55B5V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 5.6V 500MW MINI MELF
BZV55B68 L1G
BZV55B68 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23